Epitaxy na silicon carbide (SiC)
Tiren epitaxial, wanda ke ɗauke da sinadarin SiC don girma yanki na epitaxial na SiC, an sanya shi a cikin ɗakin amsawa kuma yana hulɗa kai tsaye da wafer ɗin.
Bangaren rabin wata na sama yana ɗauke da wasu kayan haɗi na ɗakin amsawa na kayan aikin Sic epitaxy, yayin da ɓangaren rabin wata na ƙasa an haɗa shi da bututun quartz, yana shigar da iskar gas don tura tushen susceptor don juyawa. Ana iya sarrafa su da zafin jiki kuma ana sanya su a cikin ɗakin amsawa ba tare da hulɗa kai tsaye da wafer ba.
Si epitaxy
Tiren, wanda ke ɗauke da sinadarin Si don girma yanki na Si epitaxial, an sanya shi a cikin ɗakin amsawa kuma yana haɗuwa kai tsaye da wafer ɗin.
Zoben da ke dumamawa yana kan zoben waje na tiren substrate na Si kuma ana amfani da shi don daidaitawa da dumama. Ana sanya shi a cikin ɗakin amsawa kuma baya taɓa wafer ɗin kai tsaye.
Wani maganin epitaxial susceptor, wanda ke riƙe da sinadarin Si don girma yanki na Si epitaxial, an sanya shi a cikin ɗakin amsawa kuma ya taɓa wafer ɗin kai tsaye.
Gangar Epitaxial muhimmin abu ne da ake amfani da shi a cikin hanyoyin kera semiconductor daban-daban, wanda galibi ana amfani da shi a cikin kayan aikin MOCVD, tare da kyakkyawan kwanciyar hankali na zafi, juriya ga sinadarai da juriya ga lalacewa, wanda ya dace sosai don amfani a cikin hanyoyin zafin jiki mai yawa. Yana hulɗa da wafers.
| Halayen zahiri na Recrystallized Silicon Carbide | |
| Kadara | Darajar da Aka Saba |
| Zafin aiki (°C) | 1600°C (tare da iskar oxygen), 1700°C (yanayin ragewa) |
| Abubuwan SiC | > 99.96% |
| Abubuwan Si kyauta | <0.1% |
| Yawan yawa | 2.60-2.70 g/cm3 |
| A bayyane yake cewa akwai ramuka | <16% |
| Ƙarfin matsi | > 600 MPa |
| Ƙarfin lanƙwasawa cikin sanyi | 80-90 MPa (20°C) |
| Ƙarfin lanƙwasawa mai zafi | 90-100 MPa (1400°C) |
| Faɗaɗawar zafi @1500°C | 4.70 10-6/°C |
| Maida wutar lantarki a zafin jiki @1200°C | 23 W/m•K |
| Modulus mai laushi | 240 GPa |
| Juriyar girgizar zafi | Mai kyau ƙwarai |
| Halayen jiki na Sintered Silicon Carbide | |
| Kadara | Darajar da Aka Saba |
| Sinadarin Sinadarai | SiC>95%, Si<5% |
| Yawan Yawa | >3.07 g/cm³ |
| A bayyane yake cewa akwai ramuka | <0.1% |
| Modulus na fashewa a 20℃ | 270 MPa |
| Modulus na fashewa a 1200℃ | 290 MPa |
| Tauri a 20℃ | 2400 Kg/mm² |
| Taurin karyewa a kashi 20% | 3.3 MPa · m1/2 |
| Matsakaicin kwararar zafi a 1200℃ | 45 w/m .K |
| Faɗaɗawar zafi a 20-1200℃ | 4.5 1 × 10 -6/℃ |
| Matsakaicin zafin aiki | 1400℃ |
| Juriyar girgizar zafi a 1200℃ | Mai kyau |
| Abubuwan asali na zahiri na fina-finan CVD SiC | |
| Kadara | Darajar da Aka Saba |
| Tsarin Crystal | FCC β phase polycrystalline, galibi (111) wanda aka mayar da hankali a kai |
| Yawan yawa | 3.21 g/cm³ |
| Tauri 2500 | (Nauyin 500g) |
| Girman Hatsi | 2 ~ 10μm |
| Tsarkakewar Sinadarai | 99.99995% |
| Ƙarfin Zafi | 640 J·kg-1·K-1 |
| Zafin Sublimation | 2700℃ |
| Ƙarfin Lankwasawa | 415 MPa RT maki 4 |
| Modulus na Matasa | 430 GPA lanƙwasa 4pt, 1300℃ |
| Tsarin kwararar zafi | 300W·m-1·K-1 |
| Faɗaɗawar Zafi (CTE) | 4.5×10-6 K -1 |
Babban fasali
Fuskar tana da yawa kuma babu ramuka.
Tsabta mai yawa, jimlar ƙazanta ƙasa da 20ppm, iska mai kyau.
Juriyar zafin jiki mai yawa, ƙarfi yana ƙaruwa tare da ƙaruwar zafin amfani, yana kaiwa ga mafi girman ƙima a 2750℃, sublimation a 3600℃.
Ƙananan modulus na roba, babban ƙarfin lantarki na thermal, ƙarancin faɗuwar thermal, da kuma kyakkyawan juriya ga girgizar zafi.
Kyakkyawan kwanciyar hankali na sinadarai, yana jure wa acid, alkali, gishiri, da sinadarai masu guba, kuma ba shi da wani tasiri ga ƙarfe mai narkewa, slag, da sauran hanyoyin lalata. Ba ya yin oxidizing sosai a cikin yanayi ƙasa da 400 Celsius, kuma ƙimar oxidation yana ƙaruwa sosai a 800 ℃.
Ba tare da fitar da wani iskar gas a yanayin zafi mai yawa ba, zai iya kiyaye injin tsabtace iska na 10-7mmHg a kusan 1800°C.
Aikace-aikacen samfur
Narkewar bututun ƙarfe don ƙafewa a masana'antar semiconductor.
Ƙofar bututun lantarki mai ƙarfi.
Goga wanda ya dace da mai daidaita wutar lantarki.
Na'urar monochromatic ta graphite don X-ray da neutron.
Siffofi daban-daban na graphite substrates da kuma shafi na bututun shaye-shaye na atomic.
Tasirin murfin carbon na pyrolytic a ƙarƙashin na'urar hangen nesa ta 500X, tare da saman da babu matsala kuma an rufe shi.
Rufin TaC shine sabon abu mai jure zafin jiki mai yawa, tare da kwanciyar hankali mai zafi fiye da SiC. A matsayin rufi mai jure tsatsa, murfin hana iskar shaka da kuma rufi mai jure lalacewa, ana iya amfani da shi a cikin yanayi sama da 2000C, ana amfani da shi sosai a cikin sassan zafi mai zafi mai zafi mai yawa a sararin samaniya, filayen girma na semiconductor na ƙarni na uku.
| Halayen jiki na murfin TaC | |
| Yawan yawa | 14.3 (g/cm3) |
| Takamaiman fitarwa | 0.3 |
| Ma'aunin faɗaɗa zafin jiki | 6.3 10/K |
| Taurin kai (HK) | HK 2000 |
| Juriya | 1 x 10-5 ohm*cm |
| Kwanciyar hankali ta zafi | <2500℃ |
| Canje-canje a girman graphite | -10~-20um |
| Kauri na shafi | Matsakaicin ƙimar ≥um 220 (um 35±10um) |
An gane sassan CVD SILICON CARBIDE masu ƙarfi a matsayin babban zaɓi na zoben RTP/EPI da tushe da sassan ramin etch na plasma waɗanda ke aiki a yanayin zafi mai ƙarfi da tsarin ke buƙata (> 1500°C), buƙatun tsarki suna da yawa musamman (> 99.9995%) kuma aikin yana da kyau musamman lokacin da sinadarai masu juriya suka yi yawa musamman. Waɗannan kayan ba su ƙunshi matakai na biyu a gefen hatsi ba, don haka sassan su suna samar da ƙananan barbashi fiye da sauran kayan. Bugu da ƙari, ana iya tsaftace waɗannan sassan ta amfani da HF/HCI mai zafi ba tare da lalacewa ba, wanda ke haifar da ƙarancin barbashi da tsawon rai.
