CVD SIC

Gabatarwa ga Rufin Silicon Carbide 

Rufinmu na Silicon Carbide (SiC) mai ƙarfi ne kuma mai jure lalacewa, wanda ya dace da muhallin da ke buƙatar tsatsa da juriyar zafi.Rufin Silicon CarbideAna amfani da shi a cikin sirara yadudduka akan nau'ikan substrates daban-daban ta hanyar tsarin CVD, yana ba da halaye masu kyau na aiki.


Mahimman Sifofi

       ● -Tsarkaka Mai Kyau: Yana alfahari da wani tsari mai tsarki na99.99995%, namuShafi na SiCyana rage haɗarin gurɓatawa a cikin ayyukan semiconductor masu mahimmanci.

● - Juriya Mai Kyau: Yana nuna kyakkyawan juriya ga lalacewa da tsatsa, wanda hakan ya sa ya zama cikakke don ƙalubalen saitunan sinadarai da na plasma.
● -Babban Mai Gudanar da Zafi: Yana tabbatar da ingantaccen aiki a ƙarƙashin yanayin zafi mai tsanani saboda kyawun halayensa na zafi.
● -Daidaitaccen Girma: Yana kiyaye daidaiton tsari a cikin yanayi daban-daban, godiya ga ƙarancin faɗuwar zafi.
● -Ingantaccen Tauri: Tare da ƙimar tauri na40 GPA, rufin SiC ɗinmu yana jure babban tasiri da gogewa.
● -Kammalawa Mai Sanyi na Fuskar Sama: Yana samar da kamannin madubi, yana rage samar da barbashi da kuma inganta aikinsu.


Aikace-aikace

Semicera Shafukan SiCAna amfani da su a cikin matakai daban-daban na kera semiconductor, ciki har da:

● -Ƙirƙirar Ƙwallon LED
● -Samar da Polysilicon
● -Girman Lu'ulu'u na Semiconductor
● -Silikon da SiC Epitaxy
● -Iskar Oxidation da Yaɗuwar Zafi (TO&D)

 

Muna samar da kayan da aka yi wa fenti da SiC wanda aka ƙera daga graphite mai ƙarfi mai ƙarfi, carbon mai ƙarfin carbon da aka ƙarfafa da fiber carbon da kuma carbide mai sake yin amfani da silicon 4N, wanda aka ƙera don masu samar da wutar lantarki mai ruwa-ruwa,Masu canza STC-TCS, masu nuna na'urar CZ, jirgin ruwan wafer na SiC, paddle na SiCwafer, bututun wafer na SiC, da masu ɗaukar wafer da ake amfani da su a cikin PECVD, silicon epitaxy, hanyoyin MOCVD.


fa'idodi

● -Tsawon Rayuwa Mai Tsawo: Yana rage yawan lokacin aiki da kuma kuɗin kulawa sosai, yana ƙara ingancin samarwa gaba ɗaya.
● -Ingantaccen Inganci: Yana cimma saman da ke da tsarki sosai da ake buƙata don sarrafa semiconductor, don haka yana haɓaka ingancin samfura.
● -Ƙarin Inganci: Yana inganta tsarin zafi da CVD, wanda ke haifar da gajerun lokutan zagayowar da kuma yawan amfanin ƙasa.


Bayanan Fasaha
     

● -Tsarin: FCC β phase polycrystaline, galibi (111) wanda aka mayar da hankali a kai
● -Yawa: 3.21 g/cm³
● -Taurin kaiTaurin Vicks 2500 (nauyi 500g)
● -Turi na Karyewa: 3.0 MPa·m1/2
● -Ma'aunin Faɗaɗawar Zafi (100–600 °C): 4.3 x 10-6k-1
● -Modulus mai laushi(1300℃):435 GPA
● -Kauri na Fim na yau da kullun:100 µm
● -Tsaurin saman:2-10 µm


Bayanan Tsabta (An auna ta hanyar Glow Discharge Mass Spectroscopy)

Sinadarin

ppm

Sinadarin

ppm

Li

< 0.001

Cu

< 0.01

Be

< 0.001

Zn

< 0.05

Al

< 0.04

Ga

< 0.01

P

< 0.01

Ge

< 0.05

S

< 0.04

As

< 0.005

K

< 0.05

In

< 0.01

Ca

< 0.05

Sn

< 0.01

Ti

< 0.005

Sb

< 0.01

V

< 0.001

W

< 0.05

Cr

< 0.05

Te

< 0.01

Mn

< 0.005

Pb

< 0.01

Fe

< 0.05

Bi

< 0.05

Ni

< 0.01

 

 
Ta hanyar amfani da fasahar CVD ta zamani, muna bayar da kayan aikin da aka ƙera musammanMaganin shafi na SiCdon biyan buƙatun abokan cinikinmu masu canzawa da kuma tallafawa ci gaban masana'antar semiconductor.

 

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