Semicera's10x10mm M-jirgin saman Aluminum Substratean ƙera shi sosai don biyan madaidaitan buƙatun ci-gaba na aikace-aikacen optoelectronic. Wannan madaidaicin yana fasalta daidaitawar jirgin sama na M-jirgin da ba na polar ba, wanda ke da mahimmanci don rage tasirin polarization a cikin na'urori kamar LEDs da diodes na laser, wanda ke haifar da haɓaka aiki da inganci.
The10x10mm M-jirgin saman Aluminum Substratean ƙera shi da ingantaccen ingancin crystalline, yana tabbatar da ƙarancin ƙarancin lahani da ingantaccen tsarin tsari. Wannan ya sa ya zama kyakkyawan zaɓi don haɓakar epitaxial na manyan fina-finai na III-nitride, waɗanda ke da mahimmanci don haɓaka na'urorin optoelectronic na gaba.
Madaidaicin aikin injiniya na Semicera yana tabbatar da cewa kowane10x10mm M-jirgin saman Aluminum Substrateyana ba da daidaiton kauri da shimfidar ƙasa, waɗanda ke da mahimmanci don jigilar fim iri ɗaya da ƙirƙira na'urar. Bugu da ƙari, ƙaƙƙarfan girman substrate yana sa ya dace da bincike da yanayin samarwa, yana ba da damar yin amfani da sassauƙa a aikace-aikace iri-iri. Tare da kyakkyawan yanayin zafi da kwanciyar hankali na sinadarai, wannan yanki yana ba da ingantaccen tushe don haɓaka fasahar fasahar optoelectronic.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
