Rahoton da aka ƙayyade na CVD
Silicon carbide (SiC) epitaxy
Tire na epitaxial, wanda ke riƙe da sikashin SiC don haɓaka yanki na SiC epitaxial, an sanya shi cikin ɗakin amsawa kuma kai tsaye yana tuntuɓar wafer.
Babban rabin wata sashi ne mai ɗaukar hoto don sauran kayan haɗi na ɗakin amsawa na kayan aikin Sic epitaxy, yayin da ɓangaren rabin wata ya haɗa da bututun ma'adini, yana gabatar da iskar gas don fitar da tushe mai tushe don juyawa.suna da ikon sarrafa zafin jiki kuma an shigar da su a cikin ɗakin amsawa ba tare da haɗin kai tsaye tare da wafer ba.
Da epitaxy
Tire, wanda ke riƙe da simintin Si don haɓaka yanki na Si epitaxial, an sanya shi a cikin ɗakin amsawa kuma kai tsaye yana tuntuɓar wafer.
Zoben preheating yana kan zoben waje na Si epitaxial substrate tray kuma ana amfani dashi don daidaitawa da dumama.Ana sanya shi a cikin ɗakin amsawa kuma baya tuntuɓar wafer kai tsaye.
Mai raɗaɗi na epitaxial, wanda ke riƙe da simintin Si don haɓaka yanki na Si epitaxial, an sanya shi a cikin ɗakin amsawa kuma kai tsaye yana tuntuɓar wafer.
Ganga na Epitaxial shine mahimman abubuwan da aka yi amfani da su a cikin matakai daban-daban na masana'antu na semiconductor, gabaɗaya ana amfani da su a cikin kayan aikin MOCVD, tare da kyakkyawan kwanciyar hankali na zafi, juriya na sinadarai da juriya, dacewa sosai don amfani a cikin matakan zafin jiki.Yana tuntuɓar wafers.
| 重结晶碳化硅物理特性 Kaddarorin jiki na Silicon Carbide Recrystallized | |
| 性质 / Dukiya | 典型数值 / Ƙimar Taimako |
| 使用温度 / Yanayin aiki (°C) | 1600°C (tare da oxygen), 1700°C (rage yanayi) |
| SiC 含量 / SiC abun ciki | > 99.96% |
| 自由 Si 含量 / Si abun ciki na kyauta | <0.1% |
| 体积密度 / Yawan yawa | 2.60-2.70 g/cm3 |
| 气孔率 / Bayyanar porosity | <16% |
| 抗压强度 / Ƙarfin matsawa | > 600 MPa |
| 常温抗弯强度 / Ƙarfin lanƙwasa sanyi | 80-90 MPa (20°C) |
| 高温抗弯强度 Ƙarfin lanƙwasa mai zafi | 90-100 MPa (1400°C) |
| 热膨胀系数 / Thermal fadadawa @1500°C | 4.70 10-6/°C |
| 导热系数 / thermal conductivity @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modules | 240 GPA |
| 抗热震性 / thermal shock juriya | Madalla da kyau |
| 烧结碳化硅物理特性 Kaddarorin jiki na Sintered Silicon Carbide | |
| 性质 / Dukiya | 典型数值 / Ƙimar Taimako |
| 化学成分 / Sinadarin Haɗin Kai | SiC>95%, Si <5% |
| 体积密度 / Yawan yawa | > 3.07 g/cm³ |
| 显气孔率 / Bayyanar porosity | <0.1% |
| 常温抗弯强度 / Modulus na fashewa a 20℃ | 270 MPa |
| 高温抗弯强度 / Modulus na rupture a 1200 ℃ | 290 MPa |
| 硬度 / Tauri a 20 ℃ | 2400 Kg/mm² |
| 断裂韧性 / Karya tauri a 20% | 3.3 MPa · m1/2 |
| 导热系数 / Thermal Conductivity a 1200 ℃ | 45 w/m .K |
| 热膨胀系数 / Thermal fadadawa a 20-1200℃ | 4.5 1 × 10 -6/ ℃ |
| 最高工作温度 / Matsakaicin zafin aiki | 1400 ℃ |
| 热震稳定性 / thermal shock juriya a 1200℃ | Yayi kyau |
| CVD SiC 薄膜基本物理性能 Abubuwan asali na zahiri na fina-finai na CVD SiC | |
| 性质 / Dukiya | 典型数值 / Ƙimar Taimako |
| 晶体结构 / Crystal Structure | FCC β lokaci polycrystalline, yafi (111) daidaitacce |
| 密度 / Yawan yawa | 3.21g/cm³ |
| 硬度 / Hardness 2500 | 维氏硬度Ｆ（500g kaya） |
| 晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
| 纯度 / Sinadaran Tsabta | 99.99995% |
| 热容 / Ƙarfin Zafi | 640kg-1· K-1 |
| 升华温度 / Zazzabi Sublimation | 2700 ℃ |
| 抗弯强度 / Ƙarfin Ƙarfi | 415 MPa RT 4-point |
| 杨氏模量 / Matasa's Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
| 导热系数 / Thermal Conductivity | 300 w·m-1· K-1 |
| 热膨胀系数 / Thermal Expansion(CTE) | 4.5×10-6 K -1 |
Rufin Carbon Pyrolytic
Babban fasali
Fuskar tana da yawa kuma babu pores.
Babban tsafta, jimlar ƙazanta <20ppm, kyakkyawan iska.
High zafin jiki juriya, ƙarfi yana ƙaruwa tare da ƙara yawan zafin jiki na amfani, kai mafi girman darajar a 2750 ℃, sublimation a 3600 ℃.
Low na roba modules, high thermal conductivity, low thermal fadada coefficient, da kuma kyakkyawan thermal girgiza juriya.
Kyakkyawan kwanciyar hankali na sinadarai, mai jurewa ga acid, alkali, gishiri, da kuma abubuwan da aka gyara, kuma ba shi da wani tasiri akan narkakken karafa, slag, da sauran kafofin watsa labarai masu lalata.Ba ya yin oxidize sosai a cikin yanayin da ke ƙasa da 400 C, kuma ƙimar iskar oxygen yana ƙaruwa sosai a 800 ℃.
Ba tare da sakin wani gas ba a yanayin zafi mai girma, zai iya kula da injin 10-7mmHg a kusan 1800 ° C.
Aikace-aikacen samfur
Narke crucible ga evaporation a semiconductor masana'antu.
Ƙofar bututu mai ƙarfi mai ƙarfi.
Goge wanda ke tuntuɓar mai sarrafa wutar lantarki.
Graphite monochromator don X-ray da neutron.
Daban-daban siffofi na graphite substrates da atomic sha tube shafi.
Tasirin murfin carbon na pyrolytic a ƙarƙashin microscope na 500X, tare da tabbataccen saman da aka rufe.
CVD Tantalum Carbide Coating
TaC shafi ne sabon ƙarni high zafin jiki resistant abu, tare da mafi high zafin jiki kwanciyar hankali fiye da SiC.Kamar yadda lalata-resistant shafi, anti-hadawan abu da iskar shaka shafi da lalacewa-resistant shafi, za a iya amfani da a cikin yanayin sama 2000C, yadu amfani a cikin Aerospace matsananci-high zazzabi zafi karshen sassa, na uku ƙarni semiconductor guda crystal girma filayen.
| 碳化钽涂层物理特性物理特性 Kaddarorin jiki na rufin TaC | |
| 密度/ Yawan yawa | 14.3 (g/cm3) |
| 比辐射率 /Takamaiman fitarwa | 0.3 |
| 热膨胀系数/ Thermal expansion coefficient | 6.3 10/K |
| 努氏硬度 /Hardness (HK) | 2000 HK |
| 电阻/ Resistance | 1 x 10-5 ohm * cm |
| 热稳定性 /Thermal kwanciyar hankali | <2500 ℃ |
| 石墨尺寸变化/ Girman zane yana canzawa | -10-20 |
| 涂层厚度/Kauri mai rufi | ≥220um dabi'un dabi'a (35um ± 10um) |
Solid Silicon Carbide (CVD SiC)
M CVD SILICON CARBIDE sassan ana gane su azaman zaɓi na farko don zoben RTP/EPI da sansanonin ruwa da sassan rami etch na plasma waɗanda ke aiki a babban tsarin da ake buƙata yanayin yanayin aiki (> 1500 ° C), buƙatun don tsabta sun fi girma (> 99.9995%) kuma aikin yana da kyau musamman lokacin da sinadarai na juriya ya yi girma musamman.Waɗannan kayan ba su ƙunshi matakai na biyu a gefen hatsi ba, don haka abubuwan da ke cikin su suna samar da ƙarancin barbashi fiye da sauran kayan.Bugu da kari, ana iya tsabtace waɗannan abubuwan haɗin gwiwa ta amfani da HF/HCI mai zafi tare da ƙarancin lalacewa, yana haifar da ƙarancin barbashi da rayuwar sabis mai tsayi.
