2 ~ 6 inch 4 ° kashe-kwangiyar P-type 4H-SiC substrate

Semicera's 2 ~ 6 inch 4° kashe-angle P-type 4H-SiC substrates an ƙera su don biyan buƙatun girma na ƙarfin aiki mai girma da masana'antun na'urar RF. Matsakaicin kusurwa na 4° yana tabbatar da ingantacciyar haɓakar epitaxial, yana mai da wannan madaidaicin tushe mai tushe don kewayon na'urorin semiconductor, gami da MOSFETs, IGBTs, da diodes.

Wannan 2 ~ 6 inch 4 ° kashe-angle P-type 4H-SiC substrate yana da kyawawan kaddarorin kayan aiki, gami da haɓakar haɓakar thermal, kyakkyawan aikin lantarki, da ingantaccen kwanciyar hankali na inji. Matsakaicin gefen kusurwa yana taimakawa rage ƙarancin micropipe kuma yana haɓaka yaduddukan epitaxial masu santsi, wanda ke da mahimmanci don haɓaka aiki da amincin na'urar semiconductor na ƙarshe.

Semicera's 2 ~ 6 inch 4° kashe-angle P-type 4H-SiC substrates suna samuwa a cikin nau'ikan diamita, jere daga inci 2 zuwa inci 6, don saduwa da buƙatun masana'antu daban-daban. An ƙera kayan aikin mu daidai don samar da matakan doping iri ɗaya da halaye masu inganci, tabbatar da cewa kowane wafer ya dace da ƙayyadaddun ƙayyadaddun bayanai da ake buƙata don aikace-aikacen lantarki na ci gaba.

Ƙaddamar da Semicera ga ƙirƙira da inganci yana tabbatar da cewa 2 ~ 6 inch 4 ° kashe-angle P-type 4H-SiC substrates isar da daidaiton aiki a cikin kewayon aikace-aikace daga na'urorin lantarki zuwa na'urori masu ƙarfi. Wannan samfurin yana ba da ingantaccen bayani ga ƙarni na gaba na masu amfani da makamashi mai ƙarfi, manyan na'urori masu ƙarfi, tallafawa ci gaban fasaha a cikin masana'antu irin su kera motoci, sadarwa, da makamashi mai sabuntawa.