Semicerayana alfaharin gabatar da30mm Aluminum Nitride Wafer Substrate, wani abu na sama da aka ƙera don biyan buƙatun kayan lantarki na zamani da aikace-aikacen optoelectronic. Aluminum Nitride (AlN) substrates sun shahara saboda fitattun halayen yanayin zafi da kaddarorin rufewar wutar lantarki, yana mai da su kyakkyawan zaɓi don na'urori masu ƙarfi.
Mabuɗin fasali:
• Ƙwararren Ƙwararrun Ƙwararrun Ƙwararru: The30mm Aluminum Nitride Wafer Substrateyana alfahari da haɓakar thermal har zuwa 170 W / mK, mahimmanci mafi girma fiye da sauran kayan aikin ƙasa, yana tabbatar da ingantaccen watsawar zafi a aikace-aikace masu ƙarfi.
•High Electric Insulation: Tare da ingantattun kaddarorin kariya na lantarki, wannan ma'aunin yana rage girman magana da tsangwama, yana mai da shi manufa don aikace-aikacen RF da microwave.
•Ƙarfin Injini: The30mm Aluminum Nitride Wafer Substrateyana ba da ingantacciyar ƙarfin inji da kwanciyar hankali, yana tabbatar da dorewa da aminci ko da ƙarƙashin tsauraran yanayin aiki.
•Aikace-aikace iri-iri: Wannan substrate cikakke ne don amfani a cikin manyan LEDs, diodes laser, da abubuwan RF, suna ba da tushe mai ƙarfi da aminci don ayyukanku masu buƙata.
•Ƙirƙirar Ƙirƙirar Ƙira: Semicera yana tabbatar da cewa an ƙera kowane nau'in wafer tare da mafi girman daidaito, yana ba da kauri iri ɗaya da ingancin saman don saduwa da ma'auni na na'urorin lantarki na ci gaba.
Haɓaka inganci da amincin na'urorin ku tare da Semicera's30mm Aluminum Nitride Wafer Substrate. An tsara kayan aikin mu don isar da kyakkyawan aiki, tabbatar da cewa na'urorin lantarki da na'urorin lantarki suna aiki da mafi kyawun su. Amince Semicera don kayan yankan-baki waɗanda ke jagorantar masana'antar cikin inganci da ƙima.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
