Semicera 3C-SiC Wafer Substrates an ƙera su don samar da ƙaƙƙarfan dandamali don na'urorin wutar lantarki na gaba da na'urori masu tsayi. Tare da ingantattun kaddarorin thermal da halaye na lantarki, an ƙera waɗannan maƙallan don biyan buƙatun buƙatun fasahar zamani.
Tsarin 3C-SiC (Cubic Silicon Carbide) na Semicera Wafer Substrates yana ba da fa'idodi na musamman, gami da haɓakar yanayin zafi mafi girma da ƙaramin haɓakar haɓakar thermal idan aka kwatanta da sauran kayan semiconductor. Wannan ya sa su zama kyakkyawan zaɓi don na'urorin da ke aiki a ƙarƙashin matsanancin yanayin zafi da yanayin ƙarfin ƙarfi.
Tare da babban ƙarfin rushewar wutar lantarki da ingantaccen kwanciyar hankali na sinadarai, Semicera 3C-SiC Wafer Substrates suna tabbatar da aiki mai dorewa da aminci. Waɗannan kaddarorin suna da mahimmanci ga aikace-aikace irin su radar mai ƙarfi, fitilun ƙasa mai ƙarfi, da masu jujjuya wutar lantarki, inda inganci da dorewa ke da mahimmanci.
Ƙaddamar da Semicera ga inganci yana nunawa a cikin ƙwararrun tsarin kera na 3C-SiC Wafer Substrates, yana tabbatar da daidaito da daidaito a kowane tsari. Wannan madaidaicin yana ba da gudummawa ga ɗaukacin aiki da tsawon rayuwar na'urorin lantarki da aka gina akan su.
Ta zaɓar Semicera 3C-SiC Wafer Substrates, masana'antun suna samun damar yin amfani da kayan yankan-baki wanda ke ba da damar haɓaka ƙarami, sauri, da ingantaccen kayan lantarki. Semicera ya ci gaba da tallafawa sabbin fasahohi ta hanyar samar da ingantattun mafita waɗanda suka dace da buƙatun masana'antar semiconductor.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |