3C-SiC Wafer Substrate

Takaitaccen Bayani:

Semicera 3C-SiC Wafer Substrates suna ba da ingantaccen ƙarfin zafin jiki da babban ƙarfin rushewar wutar lantarki, manufa don na'urorin lantarki da na'urori masu tsayi. Waɗannan kayan aikin da aka ƙera madaidaicin-engine don ingantaccen aiki a cikin yanayi mara kyau, yana tabbatar da aminci da inganci. Zaɓi Semicera don ingantattun mafita da ci-gaba.


Cikakken Bayani

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Semicera 3C-SiC Wafer Substrates an ƙera su don samar da ƙaƙƙarfan dandamali don na'urorin wutar lantarki na gaba da na'urori masu tsayi. Tare da ingantattun kaddarorin thermal da halaye na lantarki, an ƙera waɗannan maƙallan don biyan buƙatun buƙatun fasahar zamani.

Tsarin 3C-SiC (Cubic Silicon Carbide) na Semicera Wafer Substrates yana ba da fa'idodi na musamman, gami da haɓakar yanayin zafi mafi girma da ƙaramin haɓakar haɓakar thermal idan aka kwatanta da sauran kayan semiconductor. Wannan ya sa su zama kyakkyawan zaɓi don na'urorin da ke aiki a ƙarƙashin matsanancin yanayin zafi da yanayin ƙarfin ƙarfi.

Tare da babban ƙarfin rushewar wutar lantarki da ingantaccen kwanciyar hankali na sinadarai, Semicera 3C-SiC Wafer Substrates suna tabbatar da aiki mai dorewa da aminci. Waɗannan kaddarorin suna da mahimmanci ga aikace-aikace irin su radar mai ƙarfi, fitilun ƙasa mai ƙarfi, da masu jujjuya wutar lantarki, inda inganci da dorewa ke da mahimmanci.

Ƙaddamar da Semicera ga inganci yana nunawa a cikin ƙwararrun tsarin kera na 3C-SiC Wafer Substrates, yana tabbatar da daidaito da daidaito a kowane tsari. Wannan madaidaicin yana ba da gudummawa ga ɗaukacin aiki da tsawon rayuwar na'urorin lantarki da aka gina akan su.

Ta zaɓar Semicera 3C-SiC Wafer Substrates, masana'antun suna samun damar yin amfani da kayan yankan-baki wanda ke ba da damar haɓaka ƙarami, sauri, da ingantaccen kayan lantarki. Semicera ya ci gaba da tallafawa sabbin fasahohi ta hanyar samar da ingantattun mafita waɗanda suka dace da buƙatun masana'antar semiconductor.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ya/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon tarawa≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

tech_1_2_size
SiC wafers

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