Silicon carbide (SiC) guda kristal abu yana da babban band nisa nisa (~ Si 3 sau), high thermal conductivity (~ Si 3.3 sau ko GaAs sau 10), high electron jikewa gudun hijira kudi (~ Si 2.5 sau), high rushewar lantarki filin (~ Si sau 10 ko GaAs sau 5) da sauran fitattun halaye.
Kayayyakin semiconductor na ƙarni na uku galibi sun haɗa da SiC, GaN, lu'u-lu'u, da sauransu, saboda faɗin ratar band ɗin sa (Misali) ya fi ko daidai da 2.3 volts na lantarki (eV), wanda kuma aka sani da kayan tazara mai faɗi. Idan aka kwatanta da na farko da na biyu ƙarni semiconductor kayan, ƙarni na uku semiconductor kayan suna da abũbuwan amfãni daga high thermal watsin, babban rushewar lantarki, high cikakken electron gudun hijira kudi da high bonding makamashi, wanda zai iya saduwa da sabon bukatun na zamani fasahar lantarki ga high. zafin jiki, babban iko, babban matsa lamba, babban mita da juriya na radiation da sauran yanayi masu tsauri. Yana da muhimmiyar damar aikace-aikacen a fagen tsaron ƙasa, jirgin sama, sararin samaniya, binciken mai, ajiyar gani, da sauransu, kuma yana iya rage asarar makamashi fiye da 50% a cikin masana'antar dabarun da yawa kamar hanyoyin sadarwa na broadband, makamashin hasken rana, kera motoci, Semiconductor lighting, da smart grid, kuma zai iya rage yawan kayan aiki da fiye da 75%, wanda shine muhimmin mahimmanci ga ci gaban kimiyya da fasaha na ɗan adam.
Ƙarfin Semicera na iya ba abokan ciniki tare da Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwaƙwalwa ; Bugu da kari, za mu iya samar da abokan ciniki da kama da iri-iri na silicon carbide zanen gado epitaxial; Hakanan zamu iya tsara takaddar epitaxial bisa ga takamaiman bukatun abokan ciniki, kuma babu ƙaramin tsari.
BAYANIN WAFERING
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
| Abu | 8 inci | 6 inci | 4 inci | ||
| nP | n-Pm | n-Ps | SI | SI | |
| TTV(GBIR) | ≤6 ku | ≤6 ku | |||
| Bow(GF3YFCD) - Cikakken Ƙimar | ≤15 μm | ≤15 μm | ≤25μm | ≤15 μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40 μm | ≤25μm | |
| LTV(SBIR) -10mmx10mm | <2μm | ||||
| Wafar Edge | Beveling | ||||
SURFACI GAME
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-Insulating
| ltem | 8 inci | 6 inci | 4 inci | ||
| nP | n-Pm | n-Ps | SI | SI | |
| Ƙarshen Sama | Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP | ||||
| SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm | (5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm | |||
| Kwakwalwa na Edge | Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm) | ||||
| Indents | Babu Wanda Ya Halatta | ||||
| Scratches (Si-Face) | Qty.≤5, Taruwa Length≤0.5× wafer diamita | Qty.≤5, Taruwa Length≤0.5× wafer diamita | Qty.≤5, Taruwa Length≤0.5× wafer diamita | ||
| Karas | Babu Wanda Ya Halatta | ||||
| Ƙarƙashin Ƙarfi | 3mm ku | ||||
