Semicera's 4 ", 6", da 8" N-type SiC Ingots suna wakiltar ci gaba a cikin kayan semiconductor, wanda aka tsara don saduwa da karuwar buƙatun lantarki da tsarin wutar lantarki na zamani. Waɗannan ingots suna ba da tushe mai ƙarfi da kwanciyar hankali don aikace-aikacen semiconductor daban-daban, yana tabbatar da mafi kyau duka. aiki da tsawon rai.
Ana samar da ingots ɗinmu na nau'in SiC ta amfani da ingantattun hanyoyin masana'antu waɗanda ke haɓaka ƙarfin lantarki da kwanciyar hankali. Wannan ya sa su dace don aikace-aikacen masu ƙarfi da ƙarfi, irin su inverters, transistor, da sauran na'urorin lantarki masu ƙarfi inda inganci da aminci suke da mahimmanci.
Madaidaicin doping na waɗannan ingots yana tabbatar da cewa suna ba da daidaito da aiki mai maimaitawa. Wannan daidaito yana da mahimmanci ga masu haɓakawa da masana'anta waɗanda ke tura iyakokin fasaha a fagage kamar sararin samaniya, motoci, da sadarwa. Semicera's SiC ingots yana ba da damar samar da na'urori waɗanda ke aiki da kyau a ƙarƙashin matsanancin yanayi.
Zaɓin Semicera's N-type SiC Ingots yana nufin haɗa kayan da za su iya ɗaukar yanayin zafi da manyan lodin lantarki cikin sauƙi. Waɗannan ingots sun dace musamman don ƙirƙirar abubuwan haɗin gwiwa waɗanda ke buƙatar ingantaccen sarrafa zafi da aiki mai tsayi, irin su amplifiers RF da na'urorin wutar lantarki.
Ta hanyar zaɓin Semicera's 4", 6", da 8" N-type SiC Ingots, kuna saka hannun jari a cikin samfur wanda ya haɗu da kayan masarufi na musamman tare da daidaito da amincin da ake buƙata ta hanyar fasaha na semiconductor. Semicera ya ci gaba da jagorantar masana'antar ta hanyar samar da sabbin hanyoyin warware matsalolin da ke haifar da ci gaban kera na'urorin lantarki.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
