4″ 6″ Semi-Insulating SiC Substrate

Takaitaccen Bayani:

Semi-insulating SiC substrates abu ne na semiconductor tare da babban juriya, tare da juriya sama da 100,000Ω · cm. Semi-insulating SiC substrates ana amfani da su don kera na'urorin RF na microwave kamar gallium nitride microwave RF na'urorin da manyan transistor motsi na lantarki (HEMTs). Ana amfani da waɗannan na'urori galibi a cikin hanyoyin sadarwa na 5G, sadarwar tauraron dan adam, radar da sauran fannoni.


Cikakken Bayani

Tags samfurin

Semicera's 4" 6" Semi-Insulating SiC Substrate abu ne mai inganci wanda aka ƙera don saduwa da ƙaƙƙarfan buƙatun RF da aikace-aikacen na'urar wuta. Substrate ɗin ya haɗu da ingantacciyar haɓakar thermal da babban ƙarfin wutar lantarki na silicon carbide tare da kaddarorin masu rufewa, yana mai da shi kyakkyawan zaɓi don haɓaka na'urorin semiconductor na ci gaba.

4" 6" Semi-Insulating SiC Substrate an ƙera shi a hankali don tabbatar da babban kayan tsabta da daidaiton aikin rufewa. Wannan yana tabbatar da cewa madaidaicin na'urar tana ba da mahimmancin keɓantawar lantarki a cikin na'urorin RF kamar amplifiers da transistor, yayin da kuma samar da ingantaccen yanayin zafi da ake buƙata don aikace-aikacen ƙarfi mai ƙarfi. Sakamakon shine madaidaicin madauri wanda za'a iya amfani dashi a cikin kewayon samfuran lantarki masu yawa.

Semicera ya gane mahimmancin samar da abin dogaro, abubuwan da ba su da lahani don aikace-aikacen semiconductor mai mahimmanci. Mu 4" 6" Semi-Insulating SiC Substrate an samar da shi ta amfani da dabarun masana'antu na ci gaba waɗanda ke rage lahani na crystal da haɓaka daidaiton kayan. Wannan yana bawa samfurin damar tallafawa kera na'urori tare da ingantaccen aiki, kwanciyar hankali, da tsawon rayuwa.

Ƙaddamar da Semicera ga inganci yana tabbatar da 4" 6" Semi-Insulating SiC Substrate yana ba da ingantaccen aiki da daidaito a cikin kewayon aikace-aikace. Ko kuna haɓaka na'urori masu ƙarfi ko kuma hanyoyin samar da wutar lantarki masu amfani da ƙarfi, kayan aikin mu na SiC masu rufewa suna ba da tushe don nasarar na'urorin lantarki na gaba.

Mahimman sigogi

Girman

6 inci 4 inci
Diamita 150.0mm+0mm/-0.2mm 100.0mm + 0mm/-0.5mm
Hannun saman {0001}±0.2°
Hannun Filayen Firamare / <1120>±5°
Hanya na SakandareFlat / Silicon yana fuskantar sama:90° CW daga Prime flat士5°
Tsawon Fitowa na Farko / 32.5mm 士2.0 mm
Tsawon Lantarki na Sakandare / 18.0mm 士2.0mm
Matsayin daraja <1100>±1.0° /
Matsayin daraja 1.0mm+0.25mm/-0.00mm /
Matsayin Daraja 90°+5°/-1° /
Kauri 500.0um士25.0um
Nau'in Gudanarwa Semi-insulating

Crystal ingancin bayanai

ltem 6 inci 4 inci
Resistivity ≥1E9Q·cm
Polytype Babu wanda aka yarda
Maƙarƙashiya Maɗaukaki ≤0.5/cm2 ≤0.3/cm2
Hex Plates ta babban haske mai ƙarfi Babu wanda aka yarda
Haɗin Carbon Kayayyakin Kayayyakin Kayayyakin Kayayyaki Tarin yanki≤0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity–An gwada shi ta juriya mara lamba.

4 6 Semi-Insulating SiC Substrate-3

Maƙarƙashiya Maɗaukaki

4 6 Semi-Insulating SiC Substrate-4
SiC wafers

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