Semiceracikin alfahari ya gabatar da ita4" Gallium Oxide Substrates, wani kayan aikin da aka ƙera don biyan buƙatun girma na na'urorin semiconductor masu girma. Gallium oxide (Ga2O3) Substrates suna ba da babban bandeji mai faɗi, yana mai da su manufa don na'urorin lantarki masu zuwa na gaba, UV optoelectronics, da na'urori masu ƙarfi.
Mabuɗin fasali:
• Ƙarfafa Faɗin Bandgap: The4" Gallium Oxide Substratesfahariya da bandgap na kusan 4.8 eV, yana ba da izinin keɓaɓɓen ƙarfin lantarki da juriya na zafin jiki, haɓaka kayan aikin semiconductor na gargajiya kamar silicon.
•High Breakdown Voltage: Waɗannan na'urori suna ba da damar na'urori su yi aiki a mafi girman ƙarfin lantarki da iko, suna sa su zama cikakke don aikace-aikacen babban ƙarfin lantarki a cikin wutar lantarki.
•Ƙarfin Ƙarfafa Ƙarfafawa: Gallium Oxide substrates suna ba da kyakkyawan yanayin zafi, yana tabbatar da kwanciyar hankali a ƙarƙashin matsanancin yanayi, manufa don amfani a cikin yanayin da ake bukata.
•Ingantattun Kayan Abu: Tare da ƙananan ƙarancin lahani da ingancin kristal mai girma, waɗannan kayan aikin suna tabbatar da abin dogaro da daidaiton aiki, haɓaka inganci da karko na na'urorin ku.
•Aikace-aikace iri-iri: Ya dace da aikace-aikacen da yawa, ciki har da transistor wutar lantarki, Schottky diodes, da UV-C LED na'urorin, yana ba da damar sababbin abubuwa a duka iko da filayen optoelectronic.
Bincika makomar fasahar semiconductor tare da Semicera's4" Gallium Oxide Substrates. An tsara kayan aikin mu don tallafawa mafi haɓaka aikace-aikacen, samar da aminci da inganci da ake buƙata don na'urorin yankan zamani. Amince Semicera don inganci da ƙirƙira a cikin kayan semiconductor na ku.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
