Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Abubuwan Wafer Abubuwan da aka goge na gefe biyu an ƙera su don biyan ainihin buƙatun masana'antar semiconductor. An ƙera waɗannan ɓangarorin tare da keɓantaccen flatness da tsabta, suna ba da ingantaccen dandamali don na'urorin lantarki na yankan-baki.
Waɗannan wafers na HPSI SiC ana bambanta su ta hanyar haɓakar yanayin zafi mafi girma da kaddarorin rufewar lantarki, yana mai da su kyakkyawan zaɓi don aikace-aikacen mitoci masu ƙarfi da ƙarfi. Tsarin gogewar gefe biyu yana tabbatar da ƙarancin ƙarancin ƙasa, wanda ke da mahimmanci don haɓaka aikin na'urar da tsawon rai.
Babban tsafta na Semicera's SiC wafers yana rage lahani da ƙazanta, yana haifar da ƙimar yawan amfanin ƙasa da amincin na'urar. Waɗannan ɓangarorin sun dace da aikace-aikacen da yawa, gami da na'urorin microwave, na'urorin lantarki, da fasahar LED, inda daidaito da karko suke da mahimmanci.
Tare da mai da hankali kan ƙirƙira da inganci, Semicera yana amfani da dabarun masana'antu na ci gaba don samar da wafers waɗanda suka dace da ƙaƙƙarfan buƙatun na'urorin lantarki na zamani. Gyaran gefe guda biyu ba kawai inganta ƙarfin injiniya ba amma kuma yana sauƙaƙe haɗin kai tare da sauran kayan semiconductor.
Ta zaɓar Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Biyu-gefe mai goge Wafer Substrates, masana'antun za su iya yin amfani da fa'idodin ingantattun kula da yanayin zafi da rufin lantarki, suna buɗe hanya don haɓaka na'urorin lantarki masu inganci da ƙarfi. Semicera ya ci gaba da jagorantar masana'antu tare da sadaukar da kai ga inganci da ci gaban fasaha.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
