41 guda 4 inch graphite tushe MOCVD kayan aikin sassa

Takaitaccen Bayani:

Gabatarwar samfur da amfani: Sanya 41 guda na 4 hours substrate, wanda aka yi amfani dashi don girma LED tare da fim ɗin epitaxial blue-kore

Wurin na'urar samfurin: a cikin ɗakin amsawa, a cikin hulɗa kai tsaye tare da wafer

Babban samfuran ƙasa: kwakwalwan kwamfuta na LED

Babban kasuwa: LED


Cikakken Bayani

Tags samfurin

Bayani

Kamfaninmu yana bayarwaSiC shafiaiwatar da ayyuka ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun manyan ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, suna samar daSiC kariya Layer.

41 guda 4 inch graphite tushe MOCVD kayan aikin sassa

Babban Siffofin

1. High zafin jiki oxidation juriya:
da hadawan abu da iskar shaka juriya ne har yanzu da kyau sosai lokacin da yawan zafin jiki ne kamar yadda high as 1600 ℃.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

 

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal FCC β lokaci
Yawan yawa g/cm ³ 3.21
Tauri Vickers taurin 2500
Girman hatsi μm 2 ~ 10
Tsaftar Sinadari % 99.99995
Ƙarfin zafi J·k-1 · K-1 640
Zazzabi Sublimation 2700
Ƙarfin Felexural MPa (RT 4-maki) 415
Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
Ƙarfafa Ƙarfafawa (CTE) 10-6K-1 4.5
Ƙarfafawar thermal (W/mK) 300
Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
Semicera Ware House
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