1. Game daSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers ana samar da su ta hanyar ajiye lu'u-lu'u na lu'u-lu'u a kan wafer ta amfani da wafer siliki guda ɗaya na kristal a matsayin substrate, yawanci ta hanyar shigar da tururi (CVD). Daga cikin su, an shirya epitaxial na silicon carbide ta hanyar girma siliki na siliki na epitaxial a kan madaidaicin siliki carbide substrate, kuma an ƙara ƙirƙira cikin na'urori masu inganci.
2.Silicon Carbide Epitaxial WaferƘayyadaddun bayanai
Za mu iya samar da 4, 6, 8 inci N-type 4H-SiC epitaxial wafers. Wafer na epitaxial yana da babban bandwidth, babban saturation electron drift gudun, babban saurin iskar lantarki mai girma biyu, da ƙarfin fage mai girma. Waɗannan kaddarorin suna sa na'urar ta haɓaka juriya mai ƙarfi, juriya mai ƙarfi, saurin sauyawa da sauri, ƙarancin juriya, ƙaramin girman da nauyi.
3. SiC Epitaxial Aikace-aikace
SiC epitaxial waferAn fi amfani dashi a cikin Schottky diode (SBD), karfe oxide semiconductor filin tasirin transistor (MOSFET) junction filin tasirin transistor (JFET), transistor junction bipolar (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), wanda ake amfani dashi. a cikin ƙananan ƙarfin wutar lantarki, matsakaicin ƙarfin lantarki da ƙananan ƙarfin lantarki. A halin yanzu,SiC epitaxial wafersdon aikace-aikacen wutar lantarki mai girma suna cikin bincike da ci gaba a duk duniya.
