Semicera's 6 Inch N-type SiC Wafer yana tsaye a kan gaba na fasahar semiconductor. An ƙera shi don kyakkyawan aiki, wannan wafer ɗin ya yi fice a cikin babban iko, mai ƙarfi, da aikace-aikacen zafin jiki, masu mahimmanci ga na'urorin lantarki masu ci gaba.
Mu 6 inch N-type SiC wafer yana da babban motsi na lantarki da ƙananan juriya, waɗanda ke da mahimmanci ga na'urorin wuta kamar MOSFETs, diodes, da sauran abubuwan da aka gyara. Wadannan kaddarorin suna tabbatar da ingantaccen canjin makamashi da rage samar da zafi, haɓaka aiki da tsawon rayuwar tsarin lantarki.
Tsayayyen matakan sarrafa ingancin Semicera yana tabbatar da cewa kowane wafer na SiC yana kiyaye kyakkyawan shimfidar ƙasa da ƙarancin lahani. Wannan kulawa mai mahimmanci ga daki-daki yana tabbatar da cewa wafers ɗinmu sun cika ƙaƙƙarfan buƙatun masana'antu kamar motoci, sararin samaniya, da sadarwa.
Baya ga mafi girman kaddarorinsa na lantarki, nau'in SiC wafer na N-type yana ba da kwanciyar hankali mai ƙarfi da juriya ga yanayin zafi, yana mai da shi manufa don yanayin da kayan yau da kullun zasu iya kasawa. Wannan ƙarfin yana da mahimmanci musamman a aikace-aikacen da suka ƙunshi ayyuka masu ƙarfi da ƙarfi.
Ta zaɓar nau'in SiC Wafer na Semicera's 6 Inch N, kuna saka hannun jari a cikin samfur wanda ke wakiltar kololuwar ƙirƙira na semiconductor. Mun himmatu wajen samar da ginshiƙan ginin na'urori masu ɗorewa, tabbatar da cewa abokan hulɗarmu a masana'antu daban-daban sun sami damar samun mafi kyawun kayan don ci gaban fasahar su.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
