Semicera's 6 inch Semi-Insulating HPSI SiC Wafers an ƙera su don biyan buƙatun fasaha na semiconductor na zamani. Tare da tsafta na musamman da daidaito, waɗannan wafers suna aiki azaman ingantaccen tushe don haɓaka kayan aikin lantarki masu inganci.
Wadannan wafers na HPSI SiC an san su don fitattun halayen zafin jiki da kuma rufin lantarki, waɗanda ke da mahimmanci don haɓaka aikin na'urorin wutar lantarki da na'urori masu yawa. Kaddarorin masu rufewa na wucin gadi suna taimakawa wajen rage tsangwama na lantarki da haɓaka ingancin na'urar.
Tsarin masana'anta mai inganci da Semicera ke amfani da shi yana tabbatar da cewa kowane wafer yana da kauri iri ɗaya da ƙarancin lahani. Wannan madaidaicin yana da mahimmanci don aikace-aikace na ci gaba kamar na'urorin mitar rediyo, masu jujjuya wutar lantarki, da tsarin LED, inda aiki da dorewa sune mahimman abubuwan.
Ta hanyar yin amfani da fasahohin samarwa na zamani, Semicera yana ba da wafers waɗanda ba kawai saduwa ba amma sun wuce matsayin masana'antu. Girman 6-inch yana ba da sassaucin ra'ayi a cikin haɓaka samarwa, yana ba da duka bincike da aikace-aikacen kasuwanci a cikin ɓangaren semiconductor.
Zaɓin Semicera's 6 Inch Semi-Insulating HPSI SiC Wafers yana nufin saka hannun jari a cikin samfur wanda ke ba da ingantaccen inganci da aiki. Waɗannan wafers wani ɓangare ne na sadaukarwar Semicera don haɓaka ƙarfin fasahar kere-kere ta hanyar sabbin kayan aiki da ƙwararrun sana'a.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
