6 lnch n-type sic substrate

Takaitaccen Bayani:

6-inch n-type SiC substrate‌ abu ne na semiconductor wanda ke nuna amfani da girman wafer 6-inch, wanda ke ƙara adadin na'urorin da za a iya samarwa akan wafer guda ɗaya a kan wani yanki mai girma, don haka rage farashin matakin na'urar. . Haɓakawa da aikace-aikacen 6-inch n-type SiC substrates sun amfana daga ci gaban fasaha irin su hanyar haɓaka RAF, wanda ke rage rarrabuwa ta hanyar yanke lu'ulu'u tare da rarrabuwa da kwatancen layi ɗaya da lu'ulu'u na sake girma, ta haka ne inganta ingantaccen kayan aikin. Aikace-aikacen wannan ma'auni yana da mahimmanci ga haɓaka haɓakar samarwa da rage farashin na'urorin wutar lantarki na SiC.


Cikakken Bayani

Tags samfurin

Silicon carbide (SiC) guda kristal abu yana da babban band nisa nisa (~ Si 3 sau), high thermal conductivity (~ Si 3.3 sau ko GaAs sau 10), high electron jikewa gudun hijira kudi (~ Si 2.5 sau), high rushewar lantarki filin (~ Si sau 10 ko GaAs sau 5) da sauran fitattun halaye.

Kayayyakin semiconductor na ƙarni na uku galibi sun haɗa da SiC, GaN, lu'u-lu'u, da sauransu, saboda faɗin ratar band ɗin sa (Misali) ya fi ko daidai da 2.3 volts na lantarki (eV), wanda kuma aka sani da kayan tazara mai faɗi. Idan aka kwatanta da na farko da na biyu ƙarni semiconductor kayan, ƙarni na uku semiconductor kayan suna da abũbuwan amfãni daga high thermal watsin, babban rushewar lantarki, high cikakken electron gudun hijira kudi da high bonding makamashi, wanda zai iya saduwa da sabon bukatun na zamani fasahar lantarki ga high. zafin jiki, babban iko, babban matsa lamba, babban mita da juriya na radiation da sauran yanayi masu tsauri. Yana da muhimmiyar damar aikace-aikacen a fagen tsaron ƙasa, jirgin sama, sararin samaniya, binciken mai, ajiyar gani, da sauransu, kuma yana iya rage asarar makamashi fiye da 50% a cikin masana'antar dabarun da yawa kamar hanyoyin sadarwa na broadband, makamashin hasken rana, kera motoci, Semiconductor lighting, da smart grid, kuma zai iya rage yawan kayan aiki da fiye da 75%, wanda shine muhimmin mahimmanci ga ci gaban kimiyya da fasaha na ɗan adam.

Ƙarfin Semicera na iya ba abokan ciniki tare da Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwaƙwalwa ; Bugu da kari, za mu iya samar da abokan ciniki da kama da iri-iri na silicon carbide zanen gado epitaxial; Hakanan zamu iya tsara takaddar epitaxial bisa ga takamaiman bukatun abokan ciniki, kuma babu ƙaramin tsari.

BASIC KAYAN KYAUTA

Girman 6 inci
Diamita 150.0mm+0mm/-0.2mm
Hannun saman kashe-axis: 4° zuwa <1120>±0.5°
Tsawon Fitowa na Farko 47.5mm1.5mm
Hannun Filayen Firamare <1120>±1.0°
Flat na sakandare Babu
Kauri 350.0um± 25.0um
Polytype 4H
Nau'in Gudanarwa n-iri

BAYANIN MAGANAR KYAUTA CRYSTAL

6 inci
Abu Babban darajar P-MOS Babban darajar P-SBD
Resistivity 0.015Ω · cm-0.025Ω · cm
Polytype Babu wanda aka yarda
Maƙarƙashiya Maɗaukaki ≤0.2/cm2 ≤0.5/cm2
Farashin EPD ≤4000/cm2 ≤8000/cm2
TED ≤3000/cm2 ≤6000/cm2
BPD ≤1000/cm2 ≤2000/cm2
TSD ≤300/cm2 ≤1000/cm2
SF(An auna ta UV-PL-355nm) ≤0.5% yanki ≤1% yanki
Hex faranti ta babban tsananin haske Babu wanda aka yarda
Kayayyakin Carbon Na gani ta wurin haske mai ƙarfi Yankin tarawa≤0.05%
微信截图_20240822105943

Resistivity

Polytype

6 lnch n-type sic substrate (3)
6 lnch n-type sic substrate (4)

BPD&TSD

6 lnch n-type sic substrate (5)
SiC wafers

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