Semicera's 8 Inch N-type SiC Wafers suna kan gaba na haɓakar semiconductor, suna ba da tushe mai ƙarfi don haɓaka manyan na'urorin lantarki. An ƙera waɗannan waferan ne don biyan buƙatun aikace-aikacen lantarki na zamani, tun daga na'urorin lantarki zuwa na'urori masu yawa.
Nau'in doping na nau'in N a cikin waɗannan wafers na SiC yana haɓaka haɓakar wutar lantarki, yana sa su dace don aikace-aikace iri-iri, gami da diodes mai ƙarfi, transistor, da amplifiers. Maɗaukakin aiki mafi girma yana tabbatar da ƙarancin ƙarancin kuzari da ingantaccen aiki, waɗanda ke da mahimmanci ga na'urorin da ke aiki a manyan mitoci da matakan wuta.
Semicera yana amfani da ingantattun fasahohin masana'antu don samar da wafers na SiC tare da ingantacciyar daidaituwar saman ƙasa da ƙarancin lahani. Wannan madaidaicin matakin yana da mahimmanci ga aikace-aikacen da ke buƙatar daidaiton aiki da dorewa, kamar a cikin sararin samaniya, motoci, da masana'antar sadarwa.
Haɗa nau'in SiC Wafers na Semicera's 8 Inch N a cikin layin samarwa ku yana ba da tushe don ƙirƙirar abubuwan da za su iya jure yanayin yanayi mai tsauri da yanayin zafi. Waɗannan wafers cikakke ne don aikace-aikace a cikin canjin wutar lantarki, fasahar RF, da sauran filayen da ake buƙata.
Zaɓin nau'in SiC Wafers na Semicera's 8 Inch N yana nufin saka hannun jari a cikin samfur wanda ya haɗu da ingantaccen kimiyyar abu tare da ingantacciyar injiniya. Semicera ta himmatu wajen haɓaka ƙarfin fasahar semiconductor, tana ba da mafita waɗanda ke haɓaka inganci da amincin na'urorin lantarki.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
