Semiceragabatar da850V High Power GaN-on-Si Epi Wafer, ci gaba a cikin haɓakar semiconductor. Wannan ci-gaba epi wafer ya haɗu da babban inganci na Gallium Nitride (GaN) tare da ƙimar farashi na Silicon (Si), ƙirƙirar ingantaccen bayani don aikace-aikacen wutar lantarki mai ƙarfi.
Mabuɗin fasali:
•Babban Karfin Wutar Lantarki: Injiniya don tallafawa har zuwa 850V, wannan GaN-on-Si Epi Wafer yana da kyau don buƙatar wutar lantarki, yana ba da damar inganci da aiki mafi girma.
•Ingantattun Ƙarfin Ƙarfi: Tare da ingantaccen motsi na lantarki da haɓakar zafin jiki, fasahar GaN tana ba da damar ƙirar ƙira da ƙara ƙarfin ƙarfi.
•Magani Mai Tasirin Kuɗi: Ta hanyar yin amfani da siliki a matsayin ma'auni, wannan epi wafer yana ba da madadin farashi mai mahimmanci ga wafers na GaN na gargajiya, ba tare da lalata inganci ko aiki ba.
•Faɗin Aikace-aikacen: Cikakken don amfani a cikin masu canza wuta, RF amplifiers, da sauran na'urorin lantarki masu ƙarfi, tabbatar da aminci da dorewa.
Bincika makomar fasaha mai ƙarfi tare da Semicera's850V High Power GaN-on-Si Epi Wafer. An ƙera shi don aikace-aikacen yanke-yanke, wannan samfurin yana tabbatar da cewa na'urorin lantarki ɗinku suna aiki tare da matsakaicin inganci da aminci. Zaɓi Semicera don buƙatun semiconductor na gaba na gaba.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
