ICP Tray Semiconductor Custom (Etching)

Babban Semiconductor ICP Tray (Etching) Fitaccen Hoton

Takaitaccen Bayani:

Semicera Energy Technology Co., Ltd shine babban mai ba da kaya wanda ya ƙware a cikin wafer da ci-gaba na kayan masarufi.An sadaukar da mu don samar da ingantattun samfuran inganci, abin dogaro, da sabbin samfura zuwa masana'antar semiconductor,masana'antar photovoltaicda sauran fannonin da ke da alaƙa.

Layin samfurinmu ya haɗa da samfuran graphite mai rufi na SiC/TaC da samfuran yumbu, wanda ya ƙunshi abubuwa daban-daban kamar silicon carbide, silicon nitride, da aluminum oxide da sauransu.

A matsayin amintaccen mai siyarwa, mun fahimci mahimmancin abubuwan da ake amfani da su a cikin tsarin masana'antu, kuma mun himmatu wajen isar da samfuran da suka dace da ingantattun ma'auni don biyan bukatun abokan cinikinmu.

Aika mana imel

Cikakken Bayani

Tags samfurin

Bayanin Samfura

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon amsa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

Babban fasali:

1. High zafin jiki oxidation juriya:

juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.

2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.

3. Juriya juriya: babban taurin, m surface, lafiya barbashi.

4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal	FCC β lokaci
Yawan yawa	g/cm ³	3.21
Tauri	Vickers taurin	2500
Girman hatsi	μm	2 ~ 10
Tsaftar Sinadari	%	99.99995
Ƙarfin zafi	J·k-1 · K-1	640
Zazzabi Sublimation	℃	2700
Ƙarfin Felexural	MPa (RT 4-maki)	415
Modul na Young	Gpa (4pt lankwasa, 1300 ℃)	430
Ƙarfafa Ƙarfafawa (CTE)	10-6K-1	4.5
Ƙarfafawar thermal	(W/mK)	300