Rahoton da aka ƙayyade na CVD

Gabatarwa zuwa Rufin Silicon Carbide 

Rufin Rufin Rufin Kayanmu (CVD) Silicon Carbide (SiC) shafi ne mai ɗorewa kuma mai jurewa, manufa don yanayin da ke buƙatar babban lalata da juriya na thermal.Silicon Carbide shafiana amfani da shi a cikin yadudduka na bakin ciki akan nau'o'i daban-daban ta hanyar CVD, yana ba da mafi kyawun halayen aiki.


Mabuɗin Siffofin

       ● -Tsarki Na Musamman: Boasting wani matsananci-tsarki abun da ke ciki na99.99995%, muSiC shafiyana rage haɗarin kamuwa da cuta a cikin ayyukan semiconductor masu mahimmanci.

● -Mafi girman juriya: Yana nuna kyakkyawan juriya ga duka lalacewa da lalata, yana sa ya zama cikakke don ƙalubalantar saitunan sinadarai da plasma.
● -Babban Haɓakar Zazzabi: Yana tabbatar da ingantaccen aiki a ƙarƙashin matsanancin yanayin zafi saboda fitattun kayan zafi.
● -Tsarin Girma: Yana kiyaye mutuncin tsarin a fadin yanayin zafi daban-daban, godiya ga ƙarancin haɓakar haɓakar yanayin zafi.
● -Ingantacciyar Tauri: Tare da taurin rating na40 GPA, Rufin mu na SiC yana tsayayya da tasiri mai mahimmanci da abrasion.
● -Kammala saman ƙasa mai laushi: Yana ba da ƙare-kamar madubi, rage ƙirar ƙwayar cuta da haɓaka ingantaccen aiki.


Aikace-aikace

Semicera Farashin SiCAna amfani da su a matakai daban-daban na masana'antar semiconductor, gami da:

● -LED Chip Fabrication
● -Polysilicon Production
● -Semiconductor Crystal Growth
● -Silicon da SiC Epitaxy
● -Thermal Oxidation da Yaduwa (TO&D)

 

Muna ba da kayan haɗin da aka yi da SiC waɗanda aka ƙera daga graphite mai ƙarfi mai ƙarfi, carbon fiber-ƙarfafa carbon da 4N silicon carbide recrystallized, wanda aka keɓance don masu sarrafa gado mai ruwa,STC-TCS masu juyawa, masu juyawa naúrar CZ, SiC wafer jirgin ruwa, SiCwafer paddle, SiC wafer tube, da masu ɗaukar wafer da aka yi amfani da su a cikin PECVD, silicon epitaxy, hanyoyin MOCVD.


Amfani

● - Tsawon Rayuwa: Mahimmanci yana rage raguwar kayan aiki da ƙimar kulawa, haɓaka haɓakar samar da kayan aiki gabaɗaya.
● -Ingantacciyar inganci: Ya sami saman tsafta mai mahimmanci don sarrafa semiconductor, don haka haɓaka ingancin samfur.
● -Ƙara Ƙwarewa: Yana inganta tsarin zafi da CVD, yana haifar da gajeriyar lokutan sake zagayowar da yawan amfanin ƙasa.


Ƙididdiga na Fasaha
     

● -Tsarin tsari: FCC β lokaci polycrystaline, yafi (111) daidaitacce
● -Yawan yawa: 3.21g/cm³
● -Tauri: 2500 Vickes taurin (500g kaya)
● -Taurin Karya: 3.0MPam1/2
● - Ƙwararren Ƙwararren Ƙwararrun Ƙwararru (100-600 ° C)ku: 4.3x10-6k-1
● -Lastic Modulus(1300 ℃):435 GPA
● -Kaurin Fina-Finai Na Musamman:100 µm
● -Tsarin Sama:2-10 µm


Bayanin Tsarkakewa (An auna ta ta hanyar Glow Discharge Mass Spectroscopy)

Abun ciki

ppm

Abun ciki

ppm

Li

<0.001

Cu

<0.01

Be

<0.001

Zn

<0.05

Al

<0.04

Ga

<0.01

P

<0.01

Ge

<0.05

S

<0.04

As

<0.005

K

<0.05

In

<0.01

Ca

<0.05

Sn

<0.01

Ti

<0.005

Sb

<0.01

V

<0.001

W

<0.05

Cr

<0.05

Te

<0.01

Mn

<0.005

Pb

<0.01

Fe

<0.05

Bi

<0.05

Ni

<0.01

 

 
Ta amfani da fasahar CVD mai yanke-yanke, muna bayar da wanda aka keɓanceSiC shafi mafitadon saduwa da buƙatun abokan cinikinmu da goyan bayan ci gaba a masana'antar semiconductor.