Semicera yana ba da suturar tantalum carbide na musamman (TaC) don sassa daban-daban da masu ɗaukar kaya.Semicera manyan shafi tsari sa tantalum carbide (TaC) coatings cimma high tsarki, high zafin jiki kwanciyar hankali da kuma high sinadaran haƙuri, inganta samfurin ingancin SIC / GAN lu'ulu'u da EPI yadudduka (EPI)Mai ɗaukar hoto TaC mai ɗaukar hoto), da kuma tsawaita rayuwar mahimmin abubuwan da aka gyara. Yin amfani da tantalum carbide TaC shafi shine don magance matsalar gefen kuma inganta ingancin ci gaban kristal, kuma Semicera ya sami nasarar warware fasahar suturar tantalum carbide (CVD), ta kai matakin ci gaba na duniya.
Tare da zuwan 8-inch silicon carbide (SiC) wafers, buƙatun don matakai daban-daban na semiconductor sun ƙara yin ƙarfi, musamman don matakan epitaxy inda yanayin zafi zai iya wuce digiri 2000 Celsius. Kayayyakin masu raɗaɗi na al'ada, kamar graphite mai rufi da siliki carbide, suna da yawa a cikin waɗannan yanayin zafi mai girma, suna rushe tsarin epitaxy. Koyaya, CVD tantalum carbide (TaC) yana magance wannan batun yadda yakamata, yana jure yanayin zafi har zuwa digiri 2300 ma'aunin celcius kuma yana ba da rayuwar sabis mai tsayi. Tuntuɓi Semicera's CVD Tantalum Carbide Rufe Halfmoon Partdon bincika ƙarin game da ci-gaba mafita.
Bayan shekaru na ci gaba, Semicera ya ci nasara da fasaha naCVD TACtare da kokarin hadin gwiwa na sashen R&D. Rashin lahani yana da sauƙin faruwa a cikin tsarin ci gaban SiC wafers, amma bayan amfaniTaC, bambancin yana da mahimmanci. A ƙasa akwai kwatancen wafers tare da kuma ba tare da TaC ba, da kuma sassan Simicera don haɓakar kristal guda ɗaya.
tare da kuma ba tare da TaC ba
Bayan amfani da TaC (dama)
Har ila yau, Semicera'sTaC-rufi kayayyakinnuna tsawon rayuwar sabis da mafi girman juriya mai zafi idan aka kwatanta daFarashin SiC.Ma'auni na dakin gwaje-gwaje sun nuna cewa namuTaC shafina iya yin aiki akai-akai a yanayin zafi har zuwa digiri Celsius 2300 na tsawon lokaci. A ƙasa akwai wasu misalan samfuran mu: