Semiceraalfahari tayiGa2O3Epitaxy, wani bayani na zamani wanda aka tsara don tura iyakokin wutar lantarki da optoelectronics. Wannan ci gaba na fasaha na epitaxial yana yin amfani da keɓaɓɓen kaddarorin Gallium Oxide (Ga2O3) don isar da ingantaccen aiki a aikace-aikace masu buƙata.
Mabuɗin fasali:
• Na Musamman Faɗin Bandgap: Ga2O3Epitaxyyana da babban gaɓar bandeji mai faɗi, yana ba da damar haɓaka ƙarfin rugujewa da ingantaccen aiki a cikin mahalli masu ƙarfi.
•High thermal Conductivity: Layer epitaxial yana ba da kyakkyawan yanayin zafi mai kyau, yana tabbatar da aikin kwanciyar hankali ko da a ƙarƙashin yanayin zafi mai zafi, yana sa ya dace da na'urori masu mahimmanci.
•Ingantacciyar Material: Samun babban ingancin crystal tare da ƙananan lahani, tabbatar da ingantaccen aikin na'urar da tsawon rai, musamman a cikin aikace-aikace masu mahimmanci irin su transistor wuta da masu gano UV.
•Yawan aiki a cikin Aikace-aikace: Daidai dace don lantarki na lantarki, aikace-aikacen RF, da optoelectronics, samar da ingantaccen tushe don na'urorin semiconductor na gaba.
Gano yuwuwarGa2O3Epitaxytare da sabbin hanyoyin magance Semicera. An ƙera samfuran mu na epitaxial don saduwa da mafi girman ma'auni na inganci da aiki, ba da damar na'urorin ku suyi aiki tare da matsakaicin inganci da aminci. Zabi Semicera don fasahar semiconductor mai yankan-baki.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
