Semicera yana alfaharin gabatar daGa2O3Substrate, wani sabon abu da aka shirya don yin juyin juya hali na lantarki da optoelectronics.Gallium oxide (Ga2O3) substratesan san su don babban bandgap ɗin su, wanda ya sa su dace don babban iko da na'urori masu tsayi.
Mabuɗin fasali:
• Ƙarfafa Faɗin Bandgap: Ga2O3 yana ba da gaɓoɓin bandeji na kusan 4.8 eV, yana haɓaka ikonsa don ɗaukar manyan ƙarfin lantarki da yanayin zafi idan aka kwatanta da kayan gargajiya kamar Silicon da GaN.
• Babban Rushewar Wutar Lantarki: Tare da filin rushewa na musamman, daGa2O3Substratecikakke ne ga na'urorin da ke buƙatar aiki mai ƙarfi, yana tabbatar da inganci da aminci.
• Ƙarfafawar thermal: Ƙarfafawar yanayin zafi na kayan yana sa ya dace da aikace-aikace a cikin matsanancin yanayi, yana riƙe da aiki ko da a cikin yanayi mai tsanani.
• Aikace-aikace iri-iri: Mafi dacewa don amfani a cikin manyan transistor wutar lantarki, na'urorin optoelectronic UV, da ƙari, suna ba da tushe mai ƙarfi don ci-gaba na tsarin lantarki.
Ƙware makomar fasahar semiconductor tare da Semicera'sGa2O3Substrate. An ƙera shi don biyan buƙatun na'urorin lantarki masu ƙarfi da mitoci masu girma, wannan ma'auni yana saita sabon ma'auni don aiki da dorewa. Amince Semicera don isar da sabbin hanyoyin magance aikace-aikacenku mafi ƙalubale.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
