GaN Epitoxy

Takaitaccen Bayani:

GaN Epitaxy ginshiƙi ne a cikin samar da manyan na'urori na semiconductor, suna ba da ingantaccen inganci, kwanciyar hankali na zafi, da aminci. Semicera's GaN Epitaxy mafita an keɓance su don biyan buƙatun aikace-aikacen yankan-baki, yana tabbatar da inganci da daidaito a kowane Layer.


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Semicerada alfahari gabatar da yankan-bakiGaN Epitoxyayyuka, da aka tsara don saduwa da buƙatun ci gaba na masana'antar semiconductor. Gallium nitride (GaN) wani abu ne da aka sani da keɓaɓɓen kaddarorin sa, kuma tsarin haɓakar epitaxial ɗin mu yana tabbatar da cewa waɗannan fa'idodin sun cika a cikin na'urorin ku.

Babban Ayyukan GaN Layers Semiceraƙware wajen samar da inganci mai inganciGaN Epitoxyyadudduka, suna ba da tsabtar kayan abu mara misaltuwa da daidaiton tsari. Waɗannan yadudduka suna da mahimmanci ga aikace-aikace iri-iri, daga na'urorin lantarki zuwa optoelectronics, inda babban aiki da aminci ke da mahimmanci. Madaidaicin dabarun haɓakar mu yana tabbatar da cewa kowane Layer GaN ya cika madaidaicin ƙa'idodin da ake buƙata don na'urori masu yanke.

An inganta don InganciTheGaN EpitoxySemicera ya samar an kera shi musamman don haɓaka ingantaccen kayan aikin ku na lantarki. Ta hanyar isar da ƙarancin lahani, manyan yadudduka na GaN mai tsafta, muna ba da damar na'urori suyi aiki a mafi girman mitoci da ƙarfin lantarki, tare da rage asarar wuta. Wannan haɓakawa shine maɓalli don aikace-aikace kamar manyan transistor-motsitor (HEMTs) da diodes masu fitar da haske (LEDs), inda inganci yake da mahimmanci.

Mai yuwuwar aikace-aikacen aikace-aikace Semicera'sGaN Epitoxyyana da m, yana cin abinci ga masana'antu da aikace-aikace iri-iri. Ko kuna haɓaka amplifiers, abubuwan RF, ko diodes na Laser, yadudduka na GaN epitaxial ya samar da tushen da ake buƙata don manyan ayyuka, amintattun na'urori. Ana iya keɓance tsarin mu don biyan takamaiman buƙatu, tabbatar da cewa samfuran ku sun sami sakamako mafi kyau.

Alƙawarin zuwa QualityQuality shine ginshiƙinSemicera's kusanci zuwaGaN Epitoxy. Muna amfani da ingantattun fasahohin ci gaban epitaxial da tsauraran matakan sarrafa inganci don samar da yadudduka na GaN waɗanda ke nuna ingantacciyar daidaituwa, ƙarancin ƙarancin lahani, da ingantaccen kayan abu. Wannan sadaukarwa ga inganci yana tabbatar da cewa na'urorin ku ba kawai sun hadu ba amma sun wuce matsayin masana'antu.

Sabbin Dabarun Girman Girma Semicerashi ne kan gaba a cikin sababbin abubuwa a fagenGaN Epitoxy. Ƙungiyarmu ta ci gaba da bincika sababbin hanyoyi da fasaha don inganta tsarin haɓaka, samar da yadudduka na GaN tare da ingantattun halayen lantarki da na thermal. Waɗannan sabbin abubuwan suna fassara zuwa na'urori masu inganci, masu iya biyan buƙatun aikace-aikacen zamani na gaba.

Magani na Musamman don AyyukankuGane cewa kowane aikin yana da buƙatu na musamman.Semicerayayi na musammanGaN Epitoxymafita. Ko kuna buƙatar takamaiman bayanan bayanan doping, kauri mai kauri, ko saman ƙasa, muna aiki tare da ku don haɓaka tsari wanda ya dace da ainihin bukatunku. Manufarmu ita ce samar muku da yadudduka na GaN waɗanda aka ƙera daidai don tallafawa aikin na'urarku da amincinsa.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ku/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon Tara≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

  • Na baya:
  • Na gaba: