Gallium Nitride Substrates | GaN Wafers

Takaitaccen Bayani:

Gallium nitride (GaN), kamar kayan silicon carbide (SiC), na ƙarni na uku ne na kayan semiconductor tare da faɗin rata mai fa'ida, tare da faɗin babban bandeji, babban yanayin zafi, ƙimar ƙaura mai ƙarfi na lantarki, da babban fashewar filin lantarki. halaye.Na'urorin GaN suna da fa'idodin aikace-aikacen da yawa a cikin mitar mai girma, babban sauri da manyan buƙatun wutar lantarki kamar hasken ceton makamashi na LED, nunin tsinkayar laser, sabbin motocin makamashi, grid mai kaifin baki, sadarwar 5G.


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GaN Wafer

Kayayyakin semiconductor na ƙarni na uku galibi sun haɗa da SiC, GaN, lu'u-lu'u, da sauransu, saboda faɗin ratar band ɗin sa (Misali) ya fi ko daidai da 2.3 volts na lantarki (eV), wanda kuma aka sani da kayan tazara mai faɗi. Idan aka kwatanta da na farko da na biyu ƙarni semiconductor kayan, ƙarni na uku semiconductor kayan suna da abũbuwan amfãni daga high thermal watsin, babban rushewar lantarki, high cikakken electron gudun hijira kudi da high bonding makamashi, wanda zai iya saduwa da sabon bukatun na zamani fasahar lantarki ga high. zafin jiki, babban iko, babban matsa lamba, babban mita da juriya na radiation da sauran yanayi masu tsauri. Yana da muhimmiyar damar aikace-aikacen a fagen tsaro na ƙasa, jirgin sama, sararin samaniya, binciken mai, ajiyar gani, da sauransu, kuma yana iya rage asarar makamashi fiye da 50% a cikin masana'antar dabarun da yawa kamar hanyoyin sadarwa na broadband, makamashin hasken rana, kera motoci, semiconductor lighting, da smart grid, kuma zai iya rage yawan kayan aiki da fiye da 75%, wanda yake da muhimmanci ga ci gaban kimiyya da fasaha na ɗan adam.

 

Abu 项目

GaN-FS-CU-C50

GaN-FS-CN-C50

GaN-FS-C-SI-C50

Diamita
晶圆直径

50.8 ± 1 mm

Kauri厚度

350 ± 25 μm

Gabatarwa
晶向

C jirgin sama (0001) kashe kusurwa zuwa M-axis 0.35 ± 0.15°

Babban Flat
主定位边

(1-100) 0 ± 0.5°, 16 ± 1 mm

Flat na sakandare
次定位边

(11-20) 0 ± 3°, 8 ± 1 mm

Gudanarwa
导电性

Nau'in N

Nau'in N

Semi-Insulating

Juriya (300K)
电阻率

<0.1 Ω·cm

<0.05 Ω·cm

> 106 Ω·cm

TTV
平整度

≤ 15 μm

BANGO
弯曲度

≤20 μm

Ga Face Surface Roughness
Ga面粗糙度

<0.2 nm ( goge);

ko <0.3 nm (goge da kuma saman jiyya ga epitaxy)

N Face Surface Roughness
N面粗糙度

0.5 ~ 1.5 m

zaɓi: 1 ~ 3 nm (ƙasa mai kyau); <0.2 nm ( goge)

Yawan Ragewa
位错密度

Daga 1 x 105 zuwa 3 x 106 cm-2 (ƙididdigar ta CL)*

Yawan Lalacewar Macro
缺陷密度

<2 cm-2

Wuri Mai Amfani
有效面积

> 90% (ban da lahani na baki da macro)

Za a iya keɓancewa bisa ga buƙatun abokin ciniki, tsarin daban-daban na silicon, sapphire, SiC tushen GaN epitaxial takardar.

Semicera wurin aiki Wurin aiki Semicera 2 Injin kayan aiki Gudanar da CNN, tsabtace sinadarai, murfin CVD Hidimarmu


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