Kayayyakin semiconductor na ƙarni na uku galibi sun haɗa da SiC, GaN, lu'u-lu'u, da sauransu, saboda faɗin ratar band ɗin sa (Misali) ya fi ko daidai da 2.3 volts na lantarki (eV), wanda kuma aka sani da kayan tazara mai faɗi. Idan aka kwatanta da na farko da na biyu ƙarni semiconductor kayan, ƙarni na uku semiconductor kayan suna da abũbuwan amfãni daga high thermal watsin, babban rushewar lantarki, high cikakken electron gudun hijira kudi da high bonding makamashi, wanda zai iya saduwa da sabon bukatun na zamani fasahar lantarki ga high. zafin jiki, babban iko, babban matsa lamba, babban mita da juriya na radiation da sauran yanayi masu tsauri. Yana da muhimmiyar damar aikace-aikacen a fagen tsaro na ƙasa, jirgin sama, sararin samaniya, binciken mai, ajiyar gani, da sauransu, kuma yana iya rage asarar makamashi fiye da 50% a cikin masana'antar dabarun da yawa kamar hanyoyin sadarwa na broadband, makamashin hasken rana, kera motoci, semiconductor lighting, da smart grid, kuma zai iya rage yawan kayan aiki da fiye da 75%, wanda yake da muhimmanci ga ci gaban kimiyya da fasaha na ɗan adam.
Abu 项目 | GaN-FS-CU-C50 | GaN-FS-CN-C50 | GaN-FS-C-SI-C50 |
Diamita | 50.8 ± 1 mm | ||
Kauri厚度 | 350 ± 25 μm | ||
Gabatarwa | C jirgin sama (0001) kashe kusurwa zuwa M-axis 0.35 ± 0.15° | ||
Babban Flat | (1-100) 0 ± 0.5°, 16 ± 1 mm | ||
Flat na sakandare | (11-20) 0 ± 3°, 8 ± 1 mm | ||
Gudanarwa | Nau'in N | Nau'in N | Semi-Insulating |
Juriya (300K) | <0.1 Ω·cm | <0.05 Ω·cm | > 106 Ω·cm |
TTV | ≤ 15 μm | ||
BANGO | ≤20 μm | ||
Ga Face Surface Roughness | <0.2 nm ( goge); | ||
ko <0.3 nm (goge da kuma saman jiyya ga epitaxy) | |||
N Face Surface Roughness | 0.5 ~ 1.5 m | ||
zaɓi: 1 ~ 3 nm (ƙasa mai kyau); <0.2 nm ( goge) | |||
Yawan Ragewa | Daga 1 x 105 zuwa 3 x 106 cm-2 (ƙididdigar ta CL)* | ||
Yawan Lalacewar Macro | <2 cm-2 | ||
Wuri Mai Amfani | > 90% (ban da lahani na baki da macro) | ||
Za a iya keɓancewa bisa ga buƙatun abokin ciniki, tsarin daban-daban na silicon, sapphire, SiC tushen GaN epitaxial takardar. |