Bayani
The Graphite Susceptor tare daRufin Silicon Carbide, 6 guda6 inch mai ɗaukar waferdaga semicera yana ba da ɗorewa na musamman da ƙarfin zafi don aikace-aikacen ci gaban epitaxial mai girma. Semicera ya ƙware a cikin ci-gaba masu cutarwa da aka tsara don haɓaka matakai kamarYa da EpitoxykumaSiC Epitoxy, Tabbatar da ingantaccen aiki a cikin buƙatun mahalli na semiconductor.
An kera wannan mai ɗaukar hoto na musamman don amfani dashiMai Rarraba MOCVDTsari kuma yana ba da jituwa tare da dillalai daban-daban kamar su PSS Etching Carrier, ICP Etching Carrier, da RTP Carrier. Yana da manufa don samar da Silicon Monocrystalline da saitin Epitaxial Susceptor na LED, yana ba da haɓakawa a cikin jeri daban-daban, gami da Barrel Susceptor da ƙirar Pancake Susceptor.
The Graphite Susceptor tare da Silicon Carbide Coating kuma yana goyan bayan aikace-aikace a cikin sashin makamashin hasken rana ta hanyar haɗin kai tare da ɓangarorin Photovoltaic kuma ya yi fice a cikin GaN akan hanyoyin SiC Epitaxy. Ƙarfin mai ɗaukar wafer na 6-inch yana tabbatar da babban kayan aiki, yana mai da shi kayan aiki mai mahimmanci ga masana'antun a cikin masana'antar semiconductor da masana'antar hotovoltaic.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
SiC-CVD | ||
Yawan yawa | (g/cc) | 3.21 |
Ƙarfin sassauƙa | (Mpa) | 470 |
Fadada thermal | (10-6/K) | 4 |
Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
Yawan (Yankuna) | 1-1000 | > 1000 |
Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |