Semicera Semiconductor yana ba da fasaha na zamaniSiC crystalsgirma ta amfani da inganci sosaiHanyoyin ciniki na PVT. Ta hanyar amfaniCVD-SiCtubalan sabuntawa a matsayin tushen SiC, mun sami ci gaba mai ban mamaki na 1.46 mm h-1, yana tabbatar da samuwar kristal mai inganci tare da ƙananan microtubule da rarrabuwa. Wannan sabon tsari yana ba da garantin babban aikiSiC crystalsdace da bukatar aikace-aikace a cikin ikon semiconductor masana'antu.
SiC Crystal Parameter (Takaddamawa)
- Hanyar girma: Jirgin Ruwa na Jiki (PVT)
- Yawan girma: 1.46 mm h-1
- Crystal ingancin: High, tare da ƙananan microtubule da dislocation yawa
- Abu: SiC (Silicon Carbide)
- Aikace-aikacen: Babban ƙarfin lantarki, babban iko, aikace-aikacen mitoci masu girma
SiC Crystal Feature da Aikace-aikacen
Semicera Semiconductor's SiC crystalssu ne manufa dominaikace-aikacen semiconductor masu girma. Faɗin bandgap semiconductor abu cikakke ne don babban ƙarfin lantarki, babban iko, da aikace-aikacen mitoci masu yawa. An ƙera lu'ulu'unmu don saduwa da mafi ƙaƙƙarfan ƙa'idodin inganci, tabbatar da aminci da inganci a cikiikon semiconductor aikace-aikace.
SiC Crystal cikakkun bayanai
Amfani da crushedCVD-SiC tubalana matsayin tushen kayan, muSiC crystalsnuna ingantacciyar inganci idan aka kwatanta da hanyoyin al'ada. Tsarin PVT na ci gaba yana rage lahani kamar haɗakarwar carbon kuma yana kiyaye matakan tsafta, yana sa lu'ulu'unmu sun dace da su sosai.semiconductor tafiyar matakaibukatar matsananci daidaito.
