Babban-tsarki SiC Foda

Takaitaccen Bayani:

SiC Foda mai tsafta ta Semicera yana alfahari da babban abun ciki na carbon da silicon, tare da matakan tsabta daga 4N zuwa 6N. Tare da girman barbashi daga nanometers zuwa micrometers, yana da babban yanki na musamman. Semicera's SiC foda yana haɓaka reactivity, dispersibility, da aikin saman, manufa don aikace-aikacen kayan haɓaka.

Cikakken Bayani

Tags samfurin

Silicon carbide (SiC)yana zama cikin hanzari ya zama zaɓin da aka fi so akan silicon don abubuwan lantarki, musamman a aikace-aikacen bandgap mai faɗi. SiC yana ba da ingantaccen ƙarfin wutar lantarki, ƙaƙƙarfan girman, rage nauyi, da ƙananan farashin tsarin gabaɗaya.

 Bukatar tsaftataccen tsaftar SiC a cikin kayan lantarki da masana'antu na semiconductor sun kori Semicera don haɓaka mafi girman tsafta.SiC foda. Ƙirƙirar hanyar Semicera don samar da sakamako mai tsafta na SiC a cikin foda waɗanda ke nuna sauye-sauyen sauye-sauyen ilimin halittar jiki, rage yawan amfani da kayan aiki, da ƙarin bargawar mu'amalar ci gaba a cikin saitin haɓakar crystal.

 SiC foda mai tsafta yana samuwa a cikin nau'i-nau'i daban-daban kuma ana iya tsara shi don saduwa da takamaiman bukatun abokin ciniki. Don ƙarin cikakkun bayanai da kuma tattauna aikinku, tuntuɓi Semicera.

 

1. Girman Barbashi:

Rufe submicron zuwa sikelin milimita.

Silicon carbide power_Semicera-1
silicon carbide power_Semicera-3
Silicon carbide power_Semicera-2
silicon carbide power_Semicera-4

2. Tsaftar Foda

Silicon carbide ikon tsarki_Semicera1
Silicon carbide ikon tsarki_Semicera2

Rahoton gwaji na 4N

3. Lu'ulu'u Powder

Rufe submicron zuwa sikelin milimita.

Silicon carbide power_Semicera-5
Silicon carbide power_Semicera-6

4. Kwayoyin Halittar Halitta

3
4

5. Macroscopic ilimin halittar jiki

5

  • Na baya:
  • Na gaba: