Semicera High PuritySilicon Carbide Paddlean ƙera shi sosai don biyan buƙatun hanyoyin masana'antu na zamani. WannanSiC Cantilever Paddleya yi fice a cikin yanayin zafi mai zafi, yana ba da kwanciyar hankali na thermal mara misaltuwa da ƙarfin injina. An gina tsarin SiC Cantilever don jure matsanancin yanayi, yana tabbatar da abin dogaron wafer a cikin matakai daban-daban.
Daya daga cikin mahimman sabbin abubuwa naSiC Paddleƙirarsa ce mai sauƙi amma mai ƙarfi, wanda ke ba da damar haɗawa cikin sauƙi cikin tsarin da ke akwai. Babban ƙarfin wutar lantarki yana taimakawa tabbatar da kwanciyar hankali yayin matakai masu mahimmanci kamar etching da sakawa, rage haɗarin lalacewar wafer da tabbatar da samar da mafi girma. Yin amfani da babban siliki carbide a cikin ginin filafili yana haɓaka juriyar sa da tsagewa, yana samar da tsawaita rayuwar aiki da rage buƙatar maye gurbin akai-akai.
Semicera yana ba da fifiko mai ƙarfi akan ƙididdigewa, isar da aSiC Cantilever Paddlewanda ba kawai ya dace ba amma ya wuce matsayin masana'antu. An inganta wannan filashin don amfani a aikace-aikacen semiconductor daban-daban, daga jigo zuwa etching, inda daidaito da aminci ke da mahimmanci. Ta hanyar haɗa wannan fasaha mai mahimmanci, masana'antun na iya tsammanin ingantaccen aiki, rage farashin kulawa, da daidaiton ingancin samfur.
Kaddarorin jiki na Silicon Carbide Recrystallized | |
Dukiya | Mahimmanci Na Musamman |
Yanayin aiki (°C) | 1600°C (tare da oxygen), 1700°C (rage yanayi) |
SiC abun ciki | 99.96% |
Abin ciki na kyauta | <0.1% |
Yawan yawa | 2.60-2.70 g/cm3 |
Bayyanar porosity | <16% |
Ƙarfin matsi | > 600 MPa |
Ƙarfin lanƙwasa sanyi | 80-90 MPa (20°C) |
Ƙarfin lanƙwasawa mai zafi | 90-100 MPa (1400°C) |
Thermal fadada @1500°C | 4.70 10-6/°C |
Ƙarfin zafin jiki @1200°C | 23 W/m•K |
Na roba modules | 240 GPA |
Thermal girgiza juriya | Madalla da kyau |