InP da CdTe Substrate

Takaitaccen Bayani:

Semicera's InP da CdTe Substrate mafita an ƙirƙira su don aikace-aikacen aiki mai girma a cikin masana'antar semiconductor da masana'antar hasken rana. Mu InP (Indium Phosphide) da CdTe (Cadmium Telluride) substrates suna ba da kaddarorin kayan aiki na musamman, gami da babban inganci, ingantaccen ƙarfin wutar lantarki, da kwanciyar hankali mai ƙarfi. Wadannan kayan aikin sun dace don amfani a cikin na'urorin optoelectronic na ci gaba, transistors masu tsayi mai tsayi, da ƙananan ƙwayoyin hasken rana, suna samar da ingantaccen tushe don fasaha mai mahimmanci.


Cikakken Bayani

Tags samfurin

Ya da SemiceraInP da CdTe Substrate, za ku iya sa ran ingantacciyar ingantacciyar inganci da ingantacciyar ƙira don saduwa da takamaiman buƙatun hanyoyin masana'antar ku. Ko don aikace-aikacen hotovoltaic ko na'urorin semiconductor, an ƙera kayan aikin mu don tabbatar da ingantaccen aiki, dorewa, da daidaito. A matsayin amintaccen mai siye, Semicera ta himmatu wajen isar da ingantattun ingantattun hanyoyin samar da kayan aikin da za a iya daidaita su wanda ke haifar da sabbin abubuwa a cikin sassan lantarki da sabbin makamashi.

Crystalline da Kayan Lantarki1

Nau'in
Dopant
EPD (cm–2(Duba a kasa A.)
DF (Lalacewar Kyauta) yanki (cm2, Duba ƙasa B.)
c/ (c cm–3)
Mobilit (y cm2/Vs)
Resistivit (y Ω・cm)
n
Sn
≦5×104
≦1×104
≦5×103
──────
 

(0.5-6) ​​× 1018
──────
──────
n
S
──────
10 (59.4%)
≧ 15 (87%).4
(2-10) × 1018
──────
──────
p
Zn
──────
10 (59.4%)
15 (87%).
(3-6) × 1018
──────
──────
SI
Fe
≦5×104
≦1×104
──────
──────
──────
≧ 1 × 106
n
babu
≦5×104
──────
≦1×1016
4×103
──────
1 Akwai wasu ƙayyadaddun bayanai akan buƙata.

Matsakaicin Maki 13

1. Ana auna ma'auni mai yawa na etch a maki 13.

2. An ƙididdige matsakaicin matsakaicin nauyin yanki na ɗimbin yawa.

Ma'aunin Yanki na B.DF (A Sha'anin Garantin Wuri)

1. Ragewar ɗimbin ɗimbin ramuka na maki 69 da aka nuna a matsayin dama ana ƙidaya.

2. An bayyana DF a matsayin EPD kasa da 500cm–2
3. Matsakaicin yanki na DF da aka auna ta wannan hanya shine 17.25cm2
InP da CdTe Substrate (2)
InP da CdTe Substrate (1)
InP da CdTe Substrate (3)

InP Single Crystal Substrates Common Specific Takaddun Shaida

1. Gabatarwa
Matsakaicin saman (100) ± 0.2º ko (100) ± 0.05º
Ana samun daidaitawar saman ƙasa akan buƙata.
Gabatarwa na lebur NA: (011)±1º ko (011)±0.1º IF : (011)±2º
Cleaved OF yana samuwa akan buƙata.
2. Alamar Laser bisa ma'aunin SEMI yana samuwa.
3. Kunshin mutum ɗaya, da kuma kunshin gas ɗin N2 suna samuwa.
4. Etch-da-pack a gas N2 yana samuwa.
5. Akwai wafers na rectangular.
Sama da ƙayyadaddun ƙayyadaddun bayanai shine daidaitattun JX'.
Idan ana buƙatar wasu bayanai, da fatan za a neme mu.

Gabatarwa

 

InP da CdTe Substrate (4)(1)
Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
Semicera Ware House
Hidimarmu

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