LiNbO3 Bonding wafer

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Lithium niobate crystal yana da kyawawan kaddarorin electro-Optical, Acousto-Optic, Piezoelectric, da kaddarorin da ba na kan layi ba. Lithium niobate crystal wani muhimmin kristal ne mai aiki da yawa tare da kyawawan kaddarorin gani mara kyau da babban madaidaicin madaidaicin gani; Hakanan zai iya cimma daidaiton lokaci mara mahimmanci. A matsayin kristal na gani na lantarki, an yi amfani da shi azaman muhimmin kayan jagorar igiyar gani; a matsayin piezoelectric crystal, shi za a iya amfani da su yi matsakaici da kuma low mita SAW tace, high-ikon high-zazzabi resistant ultrasonic transducers, da dai sauransu Doped lithium niobate kayan kuma yadu amfani.

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Semicera's LiNbO3 Bonding Wafer an ƙera shi don biyan manyan buƙatun masana'antar semiconductor na ci gaba. Tare da ƙayyadaddun kaddarorin sa, gami da juriya mafi girma, babban kwanciyar hankali na thermal, da tsaftataccen tsafta, wannan wafer ya dace don amfani a aikace-aikacen da ke buƙatar daidaito da aiki mai dorewa.

A cikin masana'antar semiconductor, LiNbO3 Bonding Wafers ana yawan amfani da su don haɗa manyan yadudduka a cikin na'urorin optoelectronic, firikwensin, da ICs na ci gaba. Suna da ƙima musamman a cikin photonics da MEMS (Micro-Electromechanical Systems) saboda kyawawan kaddarorin dielectric da ikon jure yanayin aiki mai tsauri. Semicera's LiNbO3 Bonding Wafer an ƙera shi don tallafawa madaidaicin haɗin kai, haɓaka aikin gabaɗaya da amincin na'urorin semiconductor.

Abubuwan thermal da lantarki na LiNbO3
Wurin narkewa	1250 ℃
Curie zafin jiki	1140 ℃
Ƙarfafawar thermal	38 W/m/K @ 25 ℃
Ƙimar haɓakar thermal (@25°C)	//a, 2.0×10^-6/K //c, 2.2×10^-6/K
Resistivity	2×10^-6Ω·cm @ 200 ℃
Dielectric akai-akai	εS11/ε0=43,εT11/ε0=78 εS33/ε0=28,εT33/ε0= 2
Piezoelectric akai-akai	D₂₂= 2.04×10^-11C/N D₃₃= 19.22×10^-11C/N
Electro-optic coefficient	da T₃₃= 32 pm/V, γS₃₃= 31pm/V da T₃₁=10pm/V, γS₃₁=8.6pm/V da T₂₂= 6.8pm/V, γS₂₂= 3.4pm/V
Wutar lantarki ta rabin-wave, DC Wurin lantarki // z, haske ⊥ Z; Wurin lantarki // x ko y, haske ⊥ z	3.03 KV 4.02 KV

Ƙirƙira ta amfani da kayan inganci, LiNbO3 Bonding Wafer yana tabbatar da daidaiton aminci ko da a cikin matsanancin yanayi. Babban kwanciyar hankali na yanayin zafi ya sa ya dace musamman ga mahalli da suka shafi yanayin zafi, kamar waɗanda aka samu a cikin matakan epitaxy na semiconductor. Bugu da ƙari, babban tsaftar wafer yana tabbatar da ƙarancin ƙazanta, yana mai da shi amintaccen zaɓi don aikace-aikacen semiconductor mai mahimmanci.

A Semicera, mun himmatu don samar da mafita na jagorancin masana'antu. LiNbO3 Bonding Wafer ɗinmu yana ba da dorewa mara misaltuwa da iya aiki mai girma don aikace-aikacen da ke buƙatar tsafta mai ƙarfi, juriya, da kwanciyar hankali. Ko don samar da semiconductor na ci gaba ko wasu fasahohi na musamman, wannan wafer yana aiki azaman muhimmin sashi don kera na'urar yankan-baki.