Tsawon Rayuwar Rayuwa SiC Mai ɗaukar hoto Mai Rufaffen Wayar Solar

Rayuwar Dogon Hidima SiC Mai ɗaukar hoto Mai Rufaffen Don Hasken Rana Featured Hoton

Takaitaccen Bayani:

Silicon carbide sabon nau'in tukwane ne tare da babban aiki mai tsada da kyawawan kaddarorin kayan. Saboda fasalulluka kamar ƙarfin ƙarfi da taurin kai, juriyar zafin jiki, babban ƙarfin zafin jiki da juriya lalata sinadarai, Silicon Carbide na iya kusan jure duk matsakaicin sinadarai. Sabili da haka, ana amfani da SiC sosai a cikin hakar mai, sinadarai, injina da sararin samaniya, har ma da makamashin nukiliya kuma sojoji suna da buƙatu na musamman akan SIC. Wasu aikace-aikacen al'ada da za mu iya bayarwa sune zoben hatimi don famfo, bawul da sulke na kariya da sauransu.

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Cikakken Bayani

Tags samfurin

Amfani

High zafin jiki oxidation juriya
Kyakkyawan juriya na lalata
Kyakkyawan juriya abrasion
High coefficient na zafi conductivity
Ƙaunar kai, ƙananan yawa
Babban taurin
Ƙirar ƙira.

Aikace-aikace

-Filin mai jurewa sawa: bushing, faranti, bututun bututun iska, rufin cyclone, ganga mai niƙa, da sauransu ...
-Babban Zazzabi Filin: siC Slab, Quenching Furnace Tube, Radiant Tube, Crucible, Heat Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Kariya Tube, SiC jirgin ruwa, Kiln mota Tsarin, Setter, da dai sauransu.
-Silicon Carbide Semiconductor: SiC wafer jirgin ruwa, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer cokali mai yatsa, tsotsa farantin, jagora, da dai sauransu.
- Filin Hatimin Silicon Carbide: kowane nau'in zoben rufewa, ɗaukar kaya, bushing, da sauransu.
- Filin Hoto: Cantilever Paddle, Nika Ganga, Silicon Carbide Roller, da dai sauransu.
- Filin Batirin Lithium

WAFAR (1)

WATA (2)

Abubuwan Jiki Na SiC

Dukiya	Daraja	Hanya
Yawan yawa	3.21 g/c	Nitse-tasowa da girma
Musamman zafi	0.66 J/g °K	Filashin Laser mai ƙwanƙwasa
Ƙarfin sassauƙa	450 MPa 560 MPa	Lankwasa maki 4, lankwasa maki RT4, 1300°
Karya tauri	2.94MPa m1/2	Microindentation
Tauri	2800	Vickers, 500 g na kaya
Elastic ModulusYoung's Modulus	450 GPA430	4 pt lanƙwasa, RT4 pt lanƙwasa, 1300 °C
Girman hatsi	2-10 m	SEM

Abubuwan da aka bayar na thermal na SiC

Thermal Conductivity	250 W/m °K	Hanyar filasha Laser, RT
Fadada thermal (CTE)	4.5 x 10-6 °K	Yanayin zafin jiki zuwa 950 ° C, silica dilatometer

Ma'aunin Fasaha

Abu	Naúrar	Bayanai
Abu	Naúrar	RBSiC (SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC abun ciki	%	85	75	99	99.9	≥99
Abubuwan da ke cikin siliki kyauta	%	15	0	0	0	0
Matsakaicin zafin sabis	℃	1380	1450	1650	1620	1400
Yawan yawa	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Bude porosity	%	0	13-15	0	15-18	7-8
Karfin lankwasawa 20 ℃	ina	250	160	380	100	/
Karfin lankwasawa 1200 ℃	ina	280	180	400	120	/
Modulus na elasticity 20 ℃	Gpa	330	580	420	240	/
Modulus na elasticity 1200 ℃	Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6	100-120	36.6	/
Coefficient na thermal fadadawa	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

CVD silicon carbide shafi a saman farfajiyar recrystallized silicon carbide yumbu kayayyakin iya isa da tsarki fiye da 99.9999% saduwa da bukatun abokan ciniki a cikin semiconductor masana'antu.