Amfani
High zafin jiki oxidation juriya
Kyakkyawan juriya na lalata
Kyakkyawan juriya abrasion
High coefficient na zafi conductivity
Ƙaunar kai, ƙananan yawa
Babban taurin
Ƙirar ƙira.
Aikace-aikace
-Filin mai jurewa sawa: bushing, faranti, bututun bututun iska, rufin cyclone, ganga mai niƙa, da sauransu ...
-Babban Zazzabi Filin: siC Slab, Quenching Furnace Tube, Radiant Tube, Crucible, Heat Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Kariya Tube, SiC jirgin ruwa, Kiln mota Tsarin, Setter, da dai sauransu.
-Silicon Carbide Semiconductor: SiC wafer jirgin ruwa, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer cokali mai yatsa, tsotsa farantin, jagora, da dai sauransu.
- Filin Hatimin Silicon Carbide: kowane nau'in zoben rufewa, ɗaukar kaya, bushing, da sauransu.
- Filin Hoto: Cantilever Paddle, Nika Ganga, Silicon Carbide Roller, da dai sauransu.
- Filin Batirin Lithium
Abubuwan Jiki Na SiC
| Dukiya | Daraja | Hanya |
| Yawan yawa | 3.21 g/c | Nitse-tasowa da girma |
| Musamman zafi | 0.66 J/g °K | Filashin Laser mai ƙwanƙwasa |
| Ƙarfin sassauƙa | 450 MPa 560 MPa | Lankwasa maki 4, lanƙwasa maki RT4, 1300° |
| Karya tauri | 2.94MPa m1/2 | Microindentation |
| Tauri | 2800 | Vickers, 500 g na kaya |
| Elastic ModulusYoung's Modulus | 450 GPA430 | 4 pt lanƙwasa, RT4 pt lanƙwasa, 1300 °C |
| Girman hatsi | 2-10 m | SEM |
Abubuwan da aka bayar na thermal na SiC
| Thermal Conductivity | 250 W/m °K | Hanyar filasha Laser, RT |
| Ƙarfafa Ƙarfafawa (CTE) | 4.5 x 10-6 °K | Yanayin zafin jiki zuwa 950 ° C, silica dilatometer |
Ma'aunin Fasaha
| Abu | Naúrar | Bayanai | ||||
| RBSiC (SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC abun ciki | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Abubuwan da ke cikin siliki kyauta | % | 15 | 0 | 0 | 0 | 0 |
| Matsakaicin zafin sabis | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Yawan yawa | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Bude porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Karfin lankwasawa 20 ℃ | ina | 250 | 160 | 380 | 100 | / |
| Karfin lankwasawa 1200 ℃ | ina | 280 | 180 | 400 | 120 | / |
| Modulus na elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus na elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200 ℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient na thermal fadadawa | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
CVD silicon carbide shafi a saman farfajiyar recrystallized silicon carbide yumbu kayayyakin iya isa da tsarki fiye da 99.9999% saduwa da bukatun abokan ciniki a cikin semiconductor masana'antu.
