Tsarin girma na silicon crystal guda ɗaya ana aiwatar da shi gaba ɗaya a cikin filin thermal.Kyakkyawan filin thermal yana da kyau don inganta ingancin kristal kuma yana da ingantaccen ingantaccen crystallization.Zane-zane na filin zafi ya fi ƙayyade canje-canje da canje-canje a cikin matakan zafin jiki a cikin filin zafi mai ƙarfi.Gudun iskar gas a cikin ɗakin tanderun da kuma bambancin kayan da ake amfani da su a cikin filin zafi kai tsaye sun ƙayyade rayuwar sabis na filin zafi.Filin thermal da aka ƙera ba bisa ƙa'ida ba ba wai kawai yana sa ya yi wahala girma lu'ulu'u waɗanda suka dace da buƙatun inganci ba, amma kuma ba zai iya girma cikakken lu'ulu'u ɗaya a ƙarƙashin wasu buƙatun tsari ba.Wannan shine dalilin da ya sa masana'antar siliki ta Czochralski monocrystalline ta ɗauki ƙirar filin zafi a matsayin babban fasaha kuma tana saka hannun jari mai yawa da albarkatun ƙasa a cikin bincike da haɓaka filin zafi.
Tsarin thermal yana kunshe da kayan filin zafi daban-daban.Za mu ɗan taƙaita abubuwan da aka yi amfani da su a filin thermal.Amma game da rarraba zafin jiki a cikin filin thermal da tasirinsa akan jawo crystal, ba za mu yi nazari a nan ba.Kayan filin thermal yana nufin murhun ƙurar ƙuruciyar ƙuruciya.Tsarin tsari da maɓalli na thermally na ɗakin, waɗanda ke da mahimmanci don ƙirƙirar zanen zafin jiki mai dacewa a kusa da narke semiconductor da lu'ulu'u.
daya.thermal filin tsarin kayan
Babban kayan tallafi don haɓaka silicon crystal guda ɗaya ta hanyar Czochralski shine graphite mai tsafta.Kayan zane-zane suna taka muhimmiyar rawa a masana'antar zamani.A cikin shirye-shiryen silicon crystal guda ɗaya ta hanyar Czochralski, ana iya amfani da su azaman abubuwan haɗin ginin filin thermal kamar masu dumama, bututun jagora, ƙwanƙwasa, bututun rufewa, da trays masu ɗaci.
An zaɓi kayan graphite saboda sauƙin shirye-shiryensa a cikin manyan kundin, iya aiki da kaddarorin juriya na zafin jiki.Carbon a cikin sigar lu'u-lu'u ko graphite yana da wurin narkewa mafi girma fiye da kowane abu ko fili.Kayan zane yana da ƙarfi sosai, musamman a yanayin zafi mai girma, kuma ƙarfin wutar lantarki da yanayin zafi shima yana da kyau sosai.Ƙarfin wutar lantarki ya sa ya dace a matsayin kayan dumama, kuma yana da isassun wutar lantarki mai gamsarwa wanda zai iya rarraba wutar da wutar lantarki ke haifarwa zuwa ga crucible da sauran sassa na filin zafi.Duk da haka, a yanayin zafi, musamman a kan nisa mai tsawo, babban yanayin canja wurin zafi shine radiation.
An fara samar da sassan zane-zane ta hanyar extrusion ko matsi na istatic na lallausan barbashi na carbonaceous gauraye da mai ɗaure.Yawancin ɓangarorin graphite masu inganci galibi ana danna su ta hanyar isostatically.Gabaɗayan yanki an fara yin carbonized sannan a zayyana shi a yanayin zafi sosai, kusa da 3000°C.Sassan da aka kera daga waɗannan monoliths galibi ana tsarkake su a cikin yanayi mai ɗauke da chlorine a yanayin zafi mai zafi don cire gurɓataccen ƙarfe don biyan buƙatun masana'antar semiconductor.Koyaya, koda tare da ingantaccen tsarkakewa, matakan gurɓataccen ƙarfe umarni ne na girma sama da yarda da kayan siliki guda ɗaya.Sabili da haka, dole ne a kula da ƙirar filin zafin jiki don hana gurɓatar waɗannan abubuwan daga shiga cikin narke ko kristal.
Kayan graphite yana da ɗan juyewa, wanda ke ba da damar ragowar ƙarfe a ciki don isa saman ƙasa cikin sauƙi.Bugu da ƙari, silicon monoxide da ke cikin iskar gas ɗin da ke kewaye da saman graphite na iya shiga zurfi cikin yawancin kayan kuma ya amsa.
Na farko kristal kristal tanderu an yi su ne da karafa masu rarrafe kamar tungsten da molybdenum.Yayin da fasahar sarrafa graphite ke balaga, kayan lantarki na haɗin gwiwa tsakanin kayan aikin graphite sun zama barga, kuma dumama tanderun silicon crystal guda ɗaya sun maye gurbin tungsten da molybdenum da sauran dumama.Mafi yadu amfani da graphite abu a halin yanzu shi ne isostatic graphite.semicera na iya samar da kayan aikin graphite mai inganci mai inganci.
A cikin murhun siliki guda ɗaya na Czochralski, ana amfani da kayan haɗin gwiwar C/C a wasu lokuta, kuma yanzu ana amfani da su don kera kusoshi, goro, crucibles, faranti masu ɗaukar kaya da sauran kayan aikin.Carbon/carbon (c/c) kayan haɗakarwa sune abubuwan haɗakarwar carbon fiber da aka ƙarfafa tushen carbon.Suna da ƙayyadaddun ƙayyadaddun ƙarfi, ƙayyadaddun ƙayyadaddun modulus, ƙarancin haɓaka haɓaka haɓakar thermal, kyakkyawan ingancin wutar lantarki, babban ƙarfi tauri, ƙarancin ƙayyadaddun nauyi, juriya na thermal, juriya na lalata, Yana da jerin kyawawan kaddarorin kamar babban juriya na zafin jiki kuma a halin yanzu yana yadu sosai. ana amfani da shi a sararin samaniya, tsere, kayan halitta da sauran fagage a matsayin sabon nau'in kayan gini mai juriya mai zafi.A halin yanzu, babban ƙwanƙwasa da kayan haɗin C/C na cikin gida ke fuskanta shine batutuwan tsada da masana'antu.
Akwai wasu abubuwa da yawa da ake amfani da su don ƙirƙirar filayen zafi.Carbon fiber ƙarfafa graphite yana da mafi inji Properties;duk da haka, ya fi tsada kuma yana sanya wasu buƙatun ƙira.Silicon carbide (SiC) abu ne mafi kyau fiye da graphite ta hanyoyi da yawa, amma ya fi tsada da wuya a ƙirƙira manyan sassa masu girma.Koyaya, ana amfani da SiC sau da yawa azaman suturar CVD don haɓaka rayuwar sassan graphite da aka fallasa ga iskar silicon monoxide mai ƙarfi da kuma rage gurɓata daga graphite.Maɗaukakin CVD silicon carbide shafi yadda ya kamata yana hana gurɓataccen abu a cikin microporous graphite abu daga isa saman.
Sauran kuma shine CVD carbon, wanda kuma zai iya samar da babban Layer a saman sassan graphite.Sauran kayan juriya masu zafi, irin su molybdenum ko kayan yumbu waɗanda suka dace da yanayin, ana iya amfani da su a inda babu haɗarin gurɓata narke.Koyaya, yumburan oxide suna da iyakancewa dacewa don tuntuɓar kai tsaye tare da kayan graphite a yanayin zafi mai yawa, galibi suna barin wasu zaɓuɓɓuka idan ana buƙatar rufi.Ɗayan shine boron nitride hexagonal (wani lokaci ana kiransa farin graphite saboda irin wannan kaddarorin), amma yana da ƙarancin injina.Molybdenum gabaɗaya yana da ma'ana don aikace-aikacen zafin jiki mai ƙarfi saboda matsakaicin farashi, ƙarancin yaduwa a cikin lu'ulu'u na silicon, da ƙarancin rarrabuwa, kusan 5 × 108, wanda ke ba da damar wasu gurɓataccen molybdenum kafin lalata tsarin crystal.
biyu.Abubuwan rufewa filin thermal
Abubuwan da aka fi amfani da su na rufe fuska shine carbon ji ta hanyoyi daban-daban.Jikin Carbon an yi shi da siraran zaruruwa waɗanda ke aiki azaman rufin zafi saboda suna toshe raɗaɗin zafin rana sau da yawa a ɗan ɗan gajeren lokaci.Ana saƙa mai taushin carbon ji a cikin ƙananan zanen gado na abu, waɗanda sai a yanke su zuwa siffar da ake so kuma a lanƙwasa tam zuwa radius mai ma'ana.Jikin da aka warke ya ƙunshi nau'ikan fiber iri ɗaya, ta amfani da abin ɗaure mai ɗauke da carbon don haɗa zaruruwan da aka tarwatsa zuwa wani abu mai ƙarfi da salo.Yin amfani da tururin sinadari na carbon maimakon masu ɗaure zai iya inganta kayan aikin injina.
Yawanci, farfajiyar waje na insulating warke ji ana mai rufi da ci gaba da graphite shafi ko tsare don rage yashwa da lalacewa kazalika da particulate gurɓata.Hakanan akwai wasu nau'ikan kayan rufewa na tushen carbon, kamar kumfa carbon.Gabaɗaya, an fi son kayan graphitized a sarari saboda graphitization yana rage girman filin fiber.Wadannan manyan kayan yanki suna ba da izinin fitar da iskar gas sosai kuma suna ɗaukar ɗan lokaci kaɗan don zana tanderun zuwa injin da ya dace.Wani nau'in shine kayan haɗin C/C, wanda ke da fitattun siffofi kamar nauyi mai nauyi, babban jurewa lalacewa, da ƙarfi mai ƙarfi.Ana amfani da shi a cikin filayen thermal don maye gurbin sassan graphite, wanda ke rage saurin sauyawa na sassan graphite kuma yana haɓaka ingancin kristal guda ɗaya da kwanciyar hankali na samarwa.
Dangane da rarrabuwa na albarkatun kasa, ana iya raba jigon carbon zuwa cikin jigon carbon polyacrylonitrile, jigon carbon na tushen viscose, da ji na tushen kwalta.
Polyacrylonitrile na tushen carbon ji yana da babban abun ciki na toka, kuma monofilaments sun zama gaggautsa bayan jiyya mai zafi.Yayin aiki, ana samun ƙura cikin sauƙi don gurɓata yanayin tanderun.A lokaci guda kuma, zaruruwa cikin sauƙi suna shiga ramukan ɗan adam da hanyoyin numfashi, suna yin illa ga lafiyar ɗan adam;Carbon mai tushen viscose Yana da kyawawan kaddarorin rufewar zafi, yana da ɗan laushi bayan jiyya na zafi, kuma ba shi da yuwuwar samar da ƙura.Koyaya, ɓangaren giciye na igiyoyin tushen viscose yana da siffar da ba ta dace ba kuma akwai raƙuman ruwa da yawa akan saman fiber ɗin, wanda ke da sauƙin samuwa a gaban yanayin oxidizing a cikin tanderun silicon crystal na Czochralski.Gases kamar CO2 suna haifar da hazo na iskar oxygen da abubuwan carbon a cikin kayan silicon crystal guda ɗaya.Manyan masana'antun sun haɗa da Jamusanci SGL da sauran kamfanoni.A halin yanzu, jigon carbon da aka yi amfani da shi shine mafi yadu da ake amfani da shi a cikin masana'antar kristal guda ɗaya, kuma aikin sa na zafin jiki ya fi na carbon ji.Jikin carbon da ke da alaƙa ya yi ƙasa da ƙasa, amma carbon tushen tushen kwalta yana da mafi girman tsabta da ƙarancin ƙura.Masu kera sun haɗa da Chemical Kureha na Japan, Gas Osaka, da dai sauransu.
Tun da siffar carbon ji ba a gyarawa ba, yana da wuya a yi aiki.Yanzu kamfanoni da yawa sun ƙirƙira sabon kayan da za'a iya ɗaukar zafi wanda ya dogara da carbon ji - warkewar carbon ji.Cured carbon Feel kuma ana kiransa da ƙarfi ji.Yana da wani carbon ji cewa yana da wani siffa da dorewar kai bayan an yi masa ciki da guduro, laminated, m da carbonized.
Ingantacciyar haɓakar silica kristal guda ɗaya yana shafar yanayin filin thermal kai tsaye, kuma kayan haɗin fiber na carbon suna taka muhimmiyar rawa a cikin wannan yanayin.Carbon fiber thermal insulation soft ji har yanzu yana da fa'ida mai mahimmanci a cikin masana'antar semiconductor na photovoltaic saboda fa'idodin farashin sa, ingantaccen tasirin yanayin zafi, ƙira mai sassauƙa da siffar da za a iya daidaitawa.Bugu da kari, carbon fiber m rufi ji zai sami babban wuri don ci gaba a cikin thermal filin kasuwar kayan saboda da takamaiman ƙarfi da kuma mafi girma aiki.Mun himmatu don bincike da haɓakawa a fagen kayan haɓakar thermal da ci gaba da haɓaka aikin samfur don haɓaka wadata da haɓaka masana'antar semiconductor na hotovoltaic.
Lokacin aikawa: Mayu-15-2024