Bayanan bincike
Muhimmancin aikace-aikacen silicon carbide (SiC): A matsayin babban nau'in na'ura mai ɗaukar hoto, silicon carbide ya jawo hankali sosai saboda kyawawan kaddarorinsa na lantarki (kamar bandgap mafi girma, saurin saturation na lantarki da haɓakar thermal). Wadannan kaddarorin sun sanya shi yin amfani da shi sosai wajen kera na'urori masu karfin gaske, masu zafi da wutar lantarki, musamman a fannin wutar lantarki.
Tasirin lahani na crystal: Duk da waɗannan fa'idodin na SiC, lahani a cikin lu'ulu'u ya kasance babbar matsala da ke hana haɓaka na'urori masu inganci. Waɗannan lahani na iya haifar da lalacewar aikin na'urar kuma suna shafar amincin na'urar.
Fasahar hoto ta X-ray: Don haɓaka haɓakar kristal da fahimtar tasirin lahani akan aikin na'urar, yana da mahimmanci don ƙididdigewa da bincika ƙayyadaddun ƙayyadaddun lahani a cikin lu'ulu'u na SiC. X-ray topological Hoto (musamman ta yin amfani da synchrotron radiation biams) ya zama muhimmiyar fasaha na fasaha wanda zai iya samar da hotuna masu mahimmanci na tsarin ciki na crystal.
Ra'ayoyin bincike
Dangane da fasahar simintin binciken ray: Labarin ya ba da shawarar yin amfani da fasahar simintin raye-raye bisa tsarin daidaitawa don kwaikwayi bambancin lahani da aka gani a ainihin hotunan topological X-ray. An tabbatar da wannan hanya ta zama hanya mai mahimmanci don nazarin kaddarorin lahani na crystal a cikin nau'o'in semiconductor daban-daban.
Haɓaka fasahar simintin gyare-gyare: Don mafi kyawun kwaikwaya daban-daban rarrabuwa da aka lura a cikin 4H-SiC da 6H-SiC lu'ulu'u, masu binciken sun inganta fasahar simintin simintin raye-raye kuma sun haɗa da tasirin shakatawa na sama da ɗaukar hoto.
Abubuwan bincike
Binciken nau'in ɓarna: Labarin yana sake nazarin halayen nau'ikan nau'ikan rarrabuwa daban-daban (kamar ɓangarorin dunƙulewa, ɓarnawar gefe, ɓarnawar gauraya, ɓarnawar jirgin sama da nau'in nau'in Frank-dilocations) a cikin nau'ikan SiC daban-daban (ciki har da 4H da 6H) ta amfani da binciken ray. fasahar kwaikwayo.
Aikace-aikacen fasaha na simulation: Ana nazarin aikace-aikacen fasahar siminti na ray a ƙarƙashin yanayi daban-daban kamar raunin beam topology da topology na jirgin sama, da kuma yadda ake tantance ingantaccen zurfin shiga ta hanyar fasahar kwaikwayo.
Haɗuwa da gwaje-gwaje da kwaikwaya: Ta hanyar kwatanta hotunan topological X-ray da aka samu ta gwaji tare da hotunan da aka kwaikwayi, an tabbatar da daidaiton fasahar simulation wajen tantance nau'in rarrabuwar kawuna, Burgers vector da kuma rarraba sararin samaniya a cikin lu'ulu'u.
Ƙarshen bincike
Ingancin fasahar simulation: Binciken ya nuna cewa fasahar simulation ta ray hanya ce mai sauƙi, mara lalacewa kuma mara tabbas don bayyana kaddarorin nau'ikan ɓarna daban-daban a cikin SiC kuma yana iya ƙididdige ingantacciyar zurfin shiga tsakani.
3D ƙwanƙwasa ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙa'idodi suke.
Aikace-aikace na gaba: Ana sa ran za a ƙara amfani da fasahar siminti na Ray tracing a kan topology mai ƙarfi da kuma tushen dakin gwaje-gwaje na X-ray topology. Bugu da kari, wannan fasaha kuma za a iya ƙara zuwa kwaikwayi na lahani halaye na wasu polytypes (kamar 15R-SiC) ko wasu semiconductor kayan.
Bayanin Hoto
Hoto 1: Tsarin tsari na tsarin saitin hoto na X-ray na synchrotron radiation, gami da watsawa (Laue), juzu'i na juzu'i (Bragg), juzu'i na yanayin kiwo. Ana amfani da waɗannan geometries galibi don yin rikodin hotunan saman saman X-ray.
Hoto 2: Tsarin tsari na rarrabawar X-ray na gurɓataccen yanki a kusa da karkatarwar dunƙule. Wannan adadi yana bayanin alakar da ke tsakanin igiyar abin da ya faru (s0) da katako mai banƙyama (sg) tare da jirgin sama na yau da kullun (n) da kusurwar Bragg na gida (θB).
Hoto 3: Hoton hoto na X-ray na baya-baya na micropipes (MPs) akan wafer na 6H-SiC da bambanci na karkatarwar dunƙule (b = 6c) ƙarƙashin yanayi iri ɗaya.
Hoto 4: Micropipe nau'i-nau'i a cikin hoto na baya-baya na wafer 6H-SiC. Hotunan ƴan majalisar guda ɗaya masu tazara daban-daban da ƴan majalisar a gaba dayansu ana nuna su ta hanyar siminti na ray.
Hoto 5: An nuna hotunan abubuwan da suka faru na X-ray na wuraren kiwo na rufaffiyar screw dislocations (TSDs) akan wafer na 4H-SiC. Hotunan suna nuna ingantattun bambanci.
Hoto 6: Hotunan hotunan hoto na X-ray na abubuwan da suka faru na kiwo na ray na 1c TSD na hagu da na dama akan wafer na 4H-SiC ana nuna su.
Hoto 7: Ana nuna simintin raye-raye na TSDs a cikin 4H-SiC da 6H-SiC, suna nuna rarrabuwar kawuna tare da daban-daban na Burgers vectors da polytypes.
Hoto 8: Yana nuna abubuwan da suka faru na kiwo na X-ray topological hotuna na nau'ikan nau'ikan nau'ikan ɓangarorin ɓarke (TEDs) akan wafers na 4H-SiC, da Hotunan topological na TED da aka kwaikwayi ta amfani da hanyar gano ray.
Hoto 9: Yana nuna hotunan topological na baya na X-ray na nau'ikan TED daban-daban akan wafers na 4H-SiC, da bambancin TED da aka kwaikwayi.
Hoto na 10: Yana Nuna hotunan siminti na ray na gano abubuwan ɓarkewar zaren gauraye (TMDs) tare da takamaiman burgers vectors, da hotuna na gwaji.
Hoto 11: Yana nuna hotunan topological na baya-baya na ɓarkewar jirgin sama na basal (BPDs) akan 4H-SiC wafers, da kuma zane-zane na simintin gyare-gyaren gyare-gyaren da aka kwatanta.
Hoto 12: Yana nuna hotunan siminti na ray na hannun dama na helical BPDs a zurfin daban-daban idan aka yi la'akari da shakatawa na sama da tasirin ɗaukar hoto.
Hoto na 13: Yana nuna hotunan siminti na ray na hannun dama na helical BPDs a zurfafa daban-daban, da kuma abubuwan da suka faru na kiwo na X-ray topological images.
Hoto na 14: Yana nuna zane-zane na rarrabuwar jirgin basal a kowace hanya akan wafers na 4H-SiC, da kuma yadda ake tantance zurfin shiga ta hanyar auna tsayin tsinkaya.
Hoto 15: Bambance-bambancen BPDs tare da nau'ikan burgers daban-daban da kwatancen layi a cikin abubuwan da suka faru na kiwo na X-ray topological images, da madaidaicin sakamakon siminti na ray.
Hoto na 16: Hoton siminti na ray da aka karkatar da TSD na hannun dama akan wafer na 4H-SiC, kuma an nuna hoton yanayin kiwo na X-ray.
Hoto 17: Ana nuna simintin binciken ray da hoton gwaji na TSD da aka karkata akan 8° diyya na 4H-SiC wafer.
Hoto 18: Hoton siminti na ray na TSD da TMD da aka karkatar da su tare da burgers daban-daban amma ana nuna hanyar layi ɗaya.
Hoto na 19: Hoton siminti na ray na tarwatsewar nau'in Frank, da madaidaicin abin da ya faru na kiwo X-ray topological hoton an nuna.
Hoto na 20: Hoton topological X-ray da aka watsa na micropipe akan wafer 6H-SiC, da kuma hoton siminti na ray da aka nuna.
Hoto 21: Abubuwan da suka faru na kiwo monochromatic X-ray topological image na axially yanke samfurin 6H-SiC, da kuma ray gano simulation image na BPDs aka nuna.
Hoto 22: yana nuna hotunan siminti na ray na BPDs a cikin 6H-SiC axially yanke samfuran a kusurwoyi daban-daban.
Hoto na 23: yana nuna hotunan siminti na ray na TED, TSD da TMDs a cikin 6H-SiC axially yanke samfuran ƙarƙashin yanayin yanayin kiwo.
Hoto 24: yana nuna hotunan topological X-ray na TSDs da aka karkata a bangarori daban-daban na layin isoclinic akan wafer na 4H-SiC, da kuma hotunan siminti na ray masu dacewa.
Wannan labarin don raba ilimi ne kawai. Idan akwai wani cin zarafi, da fatan za a tuntuɓe mu don share shi.
Lokacin aikawa: Juni-18-2024