Ceramic semiconductor Properties

Siffofin:

A resistivity na yumbu tare da semiconductor Properties ne game da 10-5 ~ 107ω.cm, da kuma semiconductor Properties na yumbu kayan za a iya samu ta hanyar doping ko haifar da lattice lahani lalacewa ta hanyar stoichiometric sabawa. Ceramics da ke amfani da wannan hanyar sun haɗa da TiO2,

ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 da SiC. Daban-daban halaye nasemiconductor ceramicsshine cewa ƙarfin wutar lantarkinsu yana canzawa tare da muhalli, wanda za'a iya amfani dashi don yin nau'ikan na'urori masu mahimmanci na yumbu.

Kamar zafin zafi, mai kula da iskar gas, mai kula da zafi, mai saurin matsa lamba, mai haske da sauran na'urori masu auna firikwensin. Semiconductor spinel kayan, kamar Fe3O4, an gauraye da wadanda ba madugu kashin baya kayan, kamar MgAl2O4, a sarrafawa m mafita.

MgCr2O4, da Zr2TiO4, ana iya amfani da su azaman thermistors, waɗanda na'urorin juriya na kulawa da hankali waɗanda suka bambanta da zafin jiki. Za a iya canza ZnO ta ƙara oxides kamar Bi, Mn, Co da Cr.

Yawancin waɗannan oxides ba a narkar da su a cikin ZnO ba, amma jujjuya kan iyakokin hatsi don samar da shinge mai shinge, don samun kayan yumbu na ZnO varistor, kuma nau'in abu ne tare da mafi kyawun aiki a cikin yumbu varistor.

SiC doping (kamar ɗan adam carbon baki, graphite foda) na iya shiryasemiconductor kayantare da babban yanayin kwanciyar hankali, ana amfani da shi azaman abubuwa masu dumama juriya daban-daban, wato, sandunan carbon carbon silicon a cikin tanderun lantarki mai zafi. Sarrafa juriya da sashin giciye na SiC don cimma kusan duk abin da ake so

Yanayin aiki (har zuwa 1500 ° C), haɓaka ƙarfinsa da rage ɓangaren giciye na kayan dumama zai ƙara zafi da aka haifar. Silicon carbon sanda a cikin iska zai faru hadawan abu da iskar shaka dauki, da amfani da yawan zafin jiki ne gaba ɗaya iyakance zuwa 1600 ° C a kasa, da talakawa irin silicon carbon sanda.

Amintaccen zafin aiki shine 1350 ° C. A cikin SiC, ana maye gurbin Si atom da N atom, saboda N yana da ƙarin electrons, akwai ɗimbin electrons, kuma matakin ƙarfinsa yana kusa da ƙananan bandeji kuma yana da sauƙi a ɗaga zuwa bandeji, don haka wannan yanayin makamashi. ana kuma kiransa matakin mai bayarwa, wannan rabin

Masu gudanarwa sune nau'in semiconductor na nau'in N-ko ko na'urar gudanar da semiconductor ta hanyar lantarki. Idan aka yi amfani da Al atom a SiC don maye gurbin Si atom, saboda rashin na'urar lantarki, tsarin makamashin da aka kafa yana kusa da valence electron band a sama, yana da sauƙin karɓar electrons, saboda haka ana kiransa karɓa.

Babban matakin makamashi, wanda ya bar matsayin da ba kowa a cikin valence band wanda zai iya gudanar da electrons saboda matsayin da ba kowa ba yana aiki daidai da mai ɗaukar nauyin caji, ana kiransa nau'in P-type semiconductor ko rami semiconductor (H. Sarman,1989).