1. Me yasa akwai asilicon carbide shafi
Layin epitaxial wani ƙayyadadden fim ne na kristal guda ɗaya wanda aka girma akan wafer ta hanyar tsarin epitaxial. Ana kiran wafer substrate da fim ɗin bakin ciki na epitaxial tare da haɗin gwiwa. Daga cikin su, dasilicon carbide epitaxialLayer ana girma a kan madaidaicin siliki carbide substrate don samun siliki carbide kamanni na epitaxial wafer, wanda za'a iya ƙara yin shi zuwa na'urorin wuta kamar Schottky diodes, MOSFETs, da IGBTs. Daga cikin su, mafi yadu amfani da 4H-SiC substrate.
Tun da duk na'urorin suna m gane a kan epitaxy, ingancinepitaxyyana da tasiri mai girma akan aikin na'urar, amma ingancin epitaxy yana tasiri ta hanyar aiki na lu'ulu'u da substrates. Yana cikin tsakiyar haɗin gwiwar masana'antu kuma yana taka muhimmiyar rawa wajen haɓaka masana'antar.
Babban hanyoyin da za a shirya siliki carbide epitaxial layers sune: hanyar haɓakar evaporation; ruwa lokaci epitaxy (LPE); Epitaxy (MBE); sinadaran tururi deposition (CVD).
Daga cikin su, sinadari mai tururi (CVD) shine mafi shaharar hanyar homoepitaxial 4H-SiC. 4-H-SiC-CVD epitaxy gabaɗaya yana amfani da kayan aikin CVD, wanda zai iya tabbatar da ci gaba da ci gaba na epitaxial Layer 4H crystal SiC a ƙarƙashin yanayin yanayin zafi mai girma.
A cikin kayan aikin CVD, ba za a iya sanya substrate kai tsaye a kan ƙarfe ko kuma kawai a sanya shi a kan tushe don ƙaddamar da epitaxial, saboda ya haɗa da abubuwa daban-daban kamar jagorancin kwararar iskar gas (a tsaye, a tsaye), zafin jiki, matsa lamba, gyarawa, da fadowa gurɓatawa. Saboda haka, ana buƙatar tushe, sa'an nan kuma an sanya substrate a kan faifai, sa'an nan kuma an yi jigilar epitaxial akan substrate ta amfani da fasahar CVD. Wannan tushe shine tushen graphite mai rufin SiC.
A matsayin core bangaren, graphite tushe yana da halaye na high takamaiman ƙarfi da takamaiman modules, mai kyau thermal girgiza juriya da kuma lalata juriya, amma a lokacin samar da tsari, da graphite za a lalata da powdered saboda saura na lalata gas da karfe Organic. kwayoyin halitta, kuma rayuwar sabis na tushen graphite za a ragu sosai.
A lokaci guda, faɗuwar foda mai graphite zai ƙazantar da guntu. A cikin tsarin samar da siliki carbide epitaxial wafers, yana da wahala a cika ƙaƙƙarfan buƙatun mutane don amfani da kayan graphite, wanda ke hana haɓakawa da aikace-aikacen sa sosai. Saboda haka, fasahar sutura ta fara tashi.
2. AmfaninSiC shafi
Abubuwan da ke cikin jiki da sinadarai na sutura suna da ƙayyadaddun buƙatu don juriya na zafin jiki da juriya na lalata, wanda kai tsaye ya shafi yawan amfanin ƙasa da rayuwar samfurin. SiC kayan yana da babban ƙarfi, babban taurin, ƙarancin haɓaka haɓakar thermal da kuma kyakkyawan halayen thermal. Yana da mahimmancin kayan haɓakar zafin jiki mai zafi da kayan zafi mai zafi. Ana amfani da shi zuwa tushen graphite. Amfaninsa sune:
-SiC yana da juriya mai lalata kuma yana iya cika tushe na graphite, kuma yana da ƙima mai kyau don guje wa lalacewa ta hanyar iskar gas.
-SiC yana da haɓakaccen haɓakar thermal da ƙarfin haɗin gwiwa tare da ginshiƙan graphite, tabbatar da cewa rufin ba shi da sauƙin faɗuwa bayan yanayin zafi mai yawa da ƙananan zafin jiki.
-SiC yana da kyakkyawan kwanciyar hankali na sinadarai don hana sutura daga kasawa a cikin yanayin zafi mai zafi da lalata.
Bugu da ƙari, tanderun epitaxial na kayan daban-daban suna buƙatar trays ɗin graphite tare da alamun aiki daban-daban. Madaidaicin haɓakar haɓakar zafin jiki na kayan graphite yana buƙatar daidaitawa da zafin girma na tanderun epitaxial. Misali, yanayin girma na siliki carbide epitaxial girma yana da girma, kuma ana buƙatar tire mai madaidaicin haɓakar haɓakar thermal. Matsakaicin haɓakar haɓakar thermal na SiC yana kusa da na graphite, yana mai da shi dacewa azaman kayan da aka fi so don rufin saman ginshiƙi.
Abubuwan SiC suna da nau'ikan kristal iri-iri, kuma mafi yawan su sune 3C, 4H da 6H. Daban-daban nau'ikan crystal na SiC suna da amfani daban-daban. Misali, ana iya amfani da 4H-SiC don kera na'urori masu ƙarfi; 6H-SiC shine mafi kwanciyar hankali kuma ana iya amfani dashi don kera na'urorin optoelectronic; Ana iya amfani da 3C-SiC don samar da GaN epitaxial layers da kera na'urorin SiC-GaN RF saboda irin tsarin sa ga GaN. 3C-SiC kuma ana kiranta da β-SiC. Amfani mai mahimmanci na β-SiC shine azaman fim na bakin ciki da kayan shafa. Sabili da haka, β-SiC a halin yanzu shine babban abu don sutura.
Ana amfani da suturar SiC a cikin samar da semiconductor. Ana amfani da su musamman a cikin abubuwan da ake amfani da su, epitaxy, oxidation diffusion, etching da ion implantation. Abubuwan da ke cikin jiki da sinadarai na sutura suna da ƙayyadaddun buƙatu akan babban juriya na zafin jiki da juriya na lalata, wanda kai tsaye ya shafi yawan amfanin ƙasa da rayuwar samfurin. Sabili da haka, shirye-shiryen suturar SiC yana da mahimmanci.
Lokacin aikawa: Juni-24-2024