Da farko, sanya siliki na polycrystalline da dopants a cikin crucible quartz a cikin tanderun crystal guda ɗaya, ƙara zafin jiki zuwa fiye da digiri 1000, kuma sami silicon polycrystalline a cikin narkakken yanayi.
Silicon ingot girma tsari ne na yin silicon polycrystalline zuwa silicon crystal silicon guda ɗaya. Bayan da polycrystalline silicon aka mai tsanani zuwa ruwa, da thermal yanayi ana sarrafa daidai don girma zuwa high quality-guda guda lu'ulu'u.
Abubuwan da ke da alaƙa:
Girman kristal guda ɗaya:Bayan da zafin jiki na polycrystalline silicon bayani ya tsaya tsayin daka, ana saukar da lu'ulu'un iri a hankali a cikin narke silicon (za a kuma narkar da kristal iri a cikin narkar da siliki), sa'an nan kuma an ɗaga kristal iri sama a wani ɗan gudun hijira don shuka. tsari. Sa'an nan kuma, an kawar da ɓarna da aka haifar a lokacin aikin shuka ta hanyar aikin wuyansa. Lokacin da wuya ya ragu zuwa tsayin da ya dace, diamita na silicon crystal guda ɗaya yana haɓaka zuwa ƙimar manufa ta hanyar daidaita saurin ja da zafin jiki, sa'an nan kuma ana kiyaye daidaitattun diamita don girma zuwa tsayin manufa. A ƙarshe, don hana ɓarna daga komawa baya, ana gama ingot ɗin lu'ulu'u ɗaya don samun ingot ɗin crystal ɗin da aka gama, sannan a fitar da shi bayan an huce zafin.
Hanyoyi don shirya silicon crystal guda:Hanyar CZ da hanyar FZ. Hanyar CZ an taƙaita shi azaman hanyar CZ. Siffar hanyar CZ ita ce an taƙaita shi a cikin tsarin thermal madaidaiciya-Silinda, ta yin amfani da dumama juriya na graphite don narke silicon polycrystalline a cikin madaidaicin ma'adini mai tsafta, sa'an nan kuma saka kristal iri a cikin narke surface don walda, yayin da yana jujjuya kristal iri, sa'an nan kuma juyar da crucible. Lu'ulu'un iri yana ɗagawa a hankali zuwa sama, kuma bayan tafiyar matakai na shuka, haɓakawa, jujjuyawar kafada, girman diamita daidai, da wutsiya, ana samun silicon crystal guda ɗaya.
Hanyar narkewar yanki hanya ce ta yin amfani da polycrystalline ingots don narkewa da lu'ulu'u na semiconductor a wurare daban-daban. Ana amfani da makamashin thermal don samar da yankin narkewa a ƙarshen sandar semiconductor, sa'an nan kuma ana welded crystal iri ɗaya. Ana daidaita yanayin zafi don sanya yankin narkewa a hankali ya motsa zuwa ɗayan ƙarshen sandar, kuma ta cikin dukkan sandar, ana girma crystal guda ɗaya, kuma madaidaicin crystal daidai yake da na kristal iri. Hanyar narkewar yankin ta kasu kashi biyu: Hanyar narkewar yankin kwance da hanyar narkewar yankin dakatarwa a tsaye. Ana amfani da na farko don tsarkakewa da haɓakar kristal guda ɗaya na kayan kamar germanium da GaAs. Na karshen shine a yi amfani da coil mai tsayi a cikin yanayi ko tanderu don samar da narkakkar yanki a hulɗar tsakanin crystal iri ɗaya da kuma sandar silicon polycrystalline da aka rataye a sama da shi, sannan a matsar da narkakkar yankin zuwa sama don girma guda ɗaya. crystal.
Kimanin kashi 85% na wafer siliki ana samar da su ta hanyar Czochralski, kuma kashi 15% na wafer siliki ana samarwa ta hanyar hanyar narkewa. Dangane da aikace-aikacen, siliki guda ɗaya da aka girma ta hanyar Czochralski ana amfani dashi galibi don samar da abubuwan haɗin da'ira, yayin da silicon crystal ɗin da ke tsiro ta hanyar narkewar yanki galibi ana amfani da shi don sarrafa semiconductor. Hanyar Czochralski tana da tsarin balagagge kuma yana da sauƙin girma sililin kristal guda mai girman diamita; Hanyar narkewar yankin ba ta tuntuɓar akwati, ba ta da sauƙi a gurɓata, yana da tsabta mafi girma, kuma ya dace da samar da na'urorin lantarki masu ƙarfi, amma yana da wahala a girma babban diamita guda silicon crystal, kuma gabaɗaya ana amfani dashi don inci 8 ko ƙasa da haka a diamita. Bidiyo yana nuna hanyar Czochralski.
Sakamakon wahalar sarrafa diamita na sandar siliki guda ɗaya na kristal a cikin aikin ja da lu'ulu'u ɗaya, don samun sandunan siliki na daidaitattun diamita, kamar inci 6, inci 8, inci 12, da sauransu. crystal, diamita na ingot silicon ingot za a mirgina da ƙasa. Fuskar sandar siliki bayan mirgina yana da santsi kuma kuskuren girman ya fi karami.
Yin amfani da fasahar yankan waya ta ci gaba, ana yanke ingot ɗin kristal guda ɗaya cikin wafern silicon na kauri mai dacewa ta kayan yanka.
Saboda ƙananan kauri na siliki wafer, gefen wafer siliki bayan yankan yana da kaifi sosai. Manufar niƙa gefen shine don samar da gefen santsi kuma ba shi da sauƙi a karya a masana'antar guntu na gaba.
LAPPING shine a ƙara wafer tsakanin farantin zaɓi mai nauyi da farantin ƙananan crystal, sannan a shafa matsi kuma a juya tare da abrasive don sanya wafer ɗin ya faɗi.
Etching wani tsari ne don kawar da lalacewa ta fuskar wafer, kuma saman saman da ya lalace ta hanyar sarrafa jiki yana narkar da shi ta hanyar sinadarai.
Nika mai gefe biyu tsari ne don sanya wafer ɗin ya zama mai faɗi da kuma cire ƙanƙara a saman.
RTP wani tsari ne na saurin dumama wafer a cikin ƴan daƙiƙa kaɗan, ta yadda lahani na cikin wafer ɗin ya zama iri ɗaya, ana danne ƙazanta na ƙarfe, kuma an hana aikin da ba a saba ba na semiconductor.
Gogewa wani tsari ne wanda ke tabbatar da santsin saman ta hanyar sarrafa mashin ɗin. Yin amfani da polishing slurry da polishing zane, haɗe tare da dace zafin jiki, matsa lamba da juyawa gudun, iya kawar da inji lalacewa Layer bar ta baya tsari da kuma samun silicon wafers da kyau kwarai surface flatness.
Manufar tsaftacewa shine don cire kwayoyin halitta, barbashi, karafa, da dai sauransu da suka rage a saman siliki na siliki bayan polishing, don tabbatar da tsabta na siliki wafer surface da saduwa da ingancin bukatun na gaba tsari.
A flatness & resistivity tester gano silicon wafer bayan polishing da tsaftacewa don tabbatar da cewa kauri, flatness, gida flatness, curvature, warpage, resistivity, da dai sauransu na goge silicon wafer saduwa abokin ciniki bukatun.
Ƙididdigar ɓangarorin tsari ne don daidaitaccen duba saman wafer, kuma lahani da yawa ana ƙaddara ta hanyar watsawar Laser.
EPI GROWING tsari ne don haɓaka ingantattun fina-finai na siliki guda kristal akan wafern siliki mai gogewa ta hanyar shigar da sinadarai na lokacin tururi.
Abubuwan da ke da alaƙa:Girman Epitaxial: yana nufin haɓakar Layer crystal guda ɗaya tare da wasu buƙatu da daidaitaccen lu'ulu'u iri ɗaya kamar ma'auni a kan madaidaicin kristal guda ɗaya (substrate), kamar ainihin crystal ɗin da ke shimfida waje don sashe. An haɓaka fasahar haɓakar Epitaxial a ƙarshen 1950s da farkon 1960s. A wannan lokacin, don kera manyan na'urori masu ƙarfi da ƙarfi, ya zama dole don rage juriya na masu tattarawa, kuma ana buƙatar kayan don tsayayya da babban ƙarfin lantarki da ƙarfin halin yanzu, don haka ya zama dole don girma mai girma na bakin ciki. juriya epitaxial Layer a kan ƙaramin juriya na juriya. Sabon guda crystal Layer girma epitaxially iya zama daban-daban daga substrate cikin sharuddan conductivity irin, resistivity, da dai sauransu, da Multi-Layer guda lu'ulu'u na daban-daban kauri da kuma bukatun kuma za a iya girma, game da shi ƙwarai inganta sassauci na na'urar zane da kuma aikin na'urar.
Marufi shine marufi na ƙwararrun samfuran ƙarshe.
Lokacin aikawa: Nuwamba-05-2024