-
Tsarin Kera Semiconductor - Fasahar Etch
Ana buƙatar ɗaruruwan matakai don juya wafer zuwa semiconductor. Ɗaya daga cikin mafi mahimmancin matakai shine etching - wato, zane-zane mai kyau a kan wafer. Nasarar tsarin etching ya dogara ne akan sarrafa masu canji daban-daban a cikin kewayon rarraba saiti, da kowane etching...Kara karantawa -
Abubuwan da suka dace don Zoben Mayar da hankali a cikin Kayan aikin Plasma Etching: Silicon Carbide (SiC)
A cikin kayan aikin etching na plasma, abubuwan yumbu suna taka muhimmiyar rawa, gami da zoben mayar da hankali. Zoben mayar da hankali, wanda aka sanya a kusa da wafer kuma cikin hulɗar kai tsaye tare da shi, yana da mahimmanci don mayar da hankali kan plasma akan wafer ta amfani da wutar lantarki zuwa zobe. Wannan yana inganta rashin ...Kara karantawa -
Ƙarshen Ƙarshen Layi (FEOL): Ƙirƙirar Gidauniyar
Ƙarshen gaba na layin samarwa yana kama da aza harsashi da gina bangon gida. A cikin masana'antar semiconductor, wannan matakin ya ƙunshi ƙirƙirar sifofi na asali da transistor akan wafer silicon. Babban Matakan FEOL:...Kara karantawa -
Tasirin siliki carbide guda kristal aiki akan ingancin wafer
Na'urorin wutar lantarki na Semiconductor sun mamaye babban matsayi a cikin tsarin lantarki na wutar lantarki, musamman ma a cikin yanayin saurin haɓaka fasahohi kamar hankali na wucin gadi, sadarwar 5G da sabbin motocin makamashi, abubuwan da ake buƙata na aikin su sun kasance ...Kara karantawa -
Maɓalli mai mahimmanci don haɓakar SiC: Tantalum carbide shafi
A halin yanzu, ƙarni na uku na semiconductor ya mamaye siliki carbide. A cikin tsarin farashi na na'urorin sa, ƙirar tana da 47%, kuma epitaxy tana da 23%. Su biyun tare suna lissafin kusan 70%, wanda shine mafi mahimmancin ɓangaren masana'antar siliki carbide na'urar ...Kara karantawa -
Ta yaya samfuran tantalum carbide masu rufi ke haɓaka juriyar lalata kayan?
Tantalum carbide shafi ne da aka saba amfani da saman jiyya fasahar da za a iya muhimmanci inganta lalata juriya na kayan. Tantalum carbide shafi za a iya haɗe zuwa saman na substrate ta hanyoyi daban-daban na shirye-shirye, kamar sinadaran tururi ajiya, physica ...Kara karantawa -
Jiya, Hukumar Ƙirƙirar Kimiyya da Fasaha ta ba da sanarwar cewa Huazhuo Precision Technology ya ƙare IPO!
Kawai an sanar da isar da kayan aikin kashe Laser na SIC mai inci 8 na farko a China, wanda kuma shine fasahar Tsinghua; Me yasa suka janye kayan da kansu? Kalmomi kaɗan: Na farko, samfuran sun bambanta sosai! Da farko dai ban san me suke yi ba. A halin yanzu, H...Kara karantawa -
CVD silicon carbide shafi-2
CVD silicon carbide shafi 1. Me yasa akwai murfin silicon carbide Layer na epitaxial shine ƙayyadadden fim ɗin kristal guda ɗaya wanda aka girma akan wafer ta hanyar tsarin epitaxial. Ana kiran wafer substrate da fim ɗin bakin ciki na epitaxial tare da haɗin gwiwa. Daga cikinsu akwai...Kara karantawa -
Shiri tsari na SIC shafi
A halin yanzu, hanyoyin shirye-shirye na suturar SiC galibi sun haɗa da hanyar gel-sol, hanyar sakawa, hanyar shafa buroshi, hanyar fesa plasma, hanyar amsawar tururin sinadarai (CVR) da hanyar sanya tururi (CVD). Hanyar haɗawa Wannan hanyar wani nau'i ne na yanayin zafi mai ƙarfi ...Kara karantawa -
CVD Silicon Carbide Coating-1
Menene CVD SiC Chemical vapor deposition (CVD) tsari ne na tsugunar da ruwa wanda ake amfani dashi don samar da ingantaccen kayan aiki mai tsafta. Ana amfani da wannan tsari sau da yawa a filin masana'anta na semiconductor don samar da fina-finai na bakin ciki a saman wafers. A cikin aiwatar da shirye-shiryen SiC ta CVD, substrate ɗin ya ƙare ...Kara karantawa -
Binciken tsarin karkacewa a cikin SiC crystal ta hanyar simintin gano ray da aka taimaka ta hanyar hoton topological X-ray.
Bayanan Bincike Muhimmancin silicon carbide (SiC): A matsayin babban nau'in siliki na siliki, siliki carbide ya ja hankalin mutane da yawa saboda kyawawan kaddarorinsa na lantarki (kamar bandgap mafi girma, saurin saturation na lantarki da haɓakar thermal). Wadannan prop...Kara karantawa -
Tsarin shirye-shiryen kristal iri a cikin SiC guda kristal girma 3
Tabbatar da Ci gabaAn shirya lu'ulu'u na iri na silicon carbide (SiC) biyo bayan ƙayyadaddun tsari kuma an inganta su ta hanyar ci gaban SiC crystal. Dandalin ci gaban da aka yi amfani da shi shine tanderun haɓaka haɓakar SiC wanda ya haɓaka kansa tare da zafin girma na 2200 ℃, matsin girma na 200 Pa, da girma ...Kara karantawa