Silicon carbide (SiC)wani fili ne na inorganic wanda aka sani da kyawawan kaddarorin sa. SiC da ke faruwa a zahiri, wanda aka sani da moissanite, yana da wuya sosai. A cikin aikace-aikacen masana'antu,siliki carbidegalibi ana samarwa ne ta hanyoyin roba.
A Semicera Semiconductor, muna yin amfani da ingantattun dabaru don kerawaSiC powders masu inganci.
Hanyoyinmu sun haɗa da:
Hanyar Acheson:Wannan tsarin rage yawan carbothermal na gargajiya ya haɗa da haɗa babban yashi ma'adini mai tsafta ko murƙushe ma'adinan quartz tare da coke na man fetur, graphite, ko foda na anthracite. Wannan cakuda yana mai zafi zuwa yanayin zafi da ya wuce 2000 ° C ta amfani da lantarki mai graphite, wanda ya haifar da haɗin α-SiC foda.
Rage Ragewar Carbothermal Ƙananan Zazzabi:Ta hanyar hada siliki mai kyau foda tare da carbon foda da kuma gudanar da aikin a 1500 zuwa 1800 ° C, muna samar da β-SiC foda tare da ingantaccen tsabta. Wannan dabarar, mai kama da hanyar Acheson amma a ƙananan yanayin zafi, yana haifar da β-SiC tare da tsari na musamman na crystal. Koyaya, bayan aiwatarwa don cire ragowar carbon da silicon dioxide ya zama dole.
Silicon-Carbon Kai tsaye martani:Wannan hanya ta ƙunshi kai tsaye amsa foda silicon foda tare da carbon foda a 1000-1400 ° C don samar da high-tsarki β-SiC foda. α-SiC foda ya kasance mabuɗin albarkatun ƙasa don yumbu na silicon carbide, yayin da β-SiC, tare da tsarin lu'u-lu'u kamar lu'u-lu'u, shine manufa don daidaitaccen niƙa da aikace-aikacen gogewa.
Silicon carbide yana nuna manyan nau'ikan crystal guda biyu:α da β. β-SiC, tare da tsarin lu'ulu'u na kristal, yana da lattice mai siffar siffar fuska don duka silicon da carbon. Ya bambanta, α-sabic ya haɗa da pololtypes daban-daban kamar 4H, 15R, 15R, tare da 6h, tare da 6h da aka fi amfani da shi a masana'antar. Zazzabi yana rinjayar zaman lafiyar waɗannan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan β-SiC sun tsaya tsayin daka a ƙasa da 1600 ° C, amma sama da wannan zafin jiki, sannu a hankali yana canzawa zuwa nau'ikan α-SiC. Misali, 4H-SiC yana samuwa a kusa da 2000C, yayin da 15R da 6H polytypes suna buƙatar yanayin zafi sama da 2100°C. Musamman ma, 6H-SiC ya kasance barga ko da a yanayin zafi da ya wuce 2200°C.
A Semicera Semiconductor, an sadaukar da mu don haɓaka fasahar SiC. Ƙwarewar mu aSiC shafida kayan suna tabbatar da inganci da inganci don aikace-aikacen semiconductor ku. Bincika yadda hanyoyin mu na yanke-yanke za su iya haɓaka ayyukanku da samfuran ku.
Lokacin aikawa: Yuli-26-2024