1. Bayani
Dumama, wanda kuma aka sani da sarrafa zafin jiki, yana nufin hanyoyin masana'antu waɗanda ke aiki a yanayin zafi mai yawa, yawanci sama da wurin narkewar aluminum.
Tsarin dumama yawanci ana aiwatar da shi a cikin tanderu mai zafin jiki kuma ya haɗa da manyan matakai kamar oxidation, yaduwa na ƙazanta, da annealing don gyara lahani na crystal a masana'antar semiconductor.
Oxidation: Wani tsari ne da ake sanya wafer siliki a cikin yanayi na oxidants kamar oxygen ko tururin ruwa don maganin zafi mai zafi, yana haifar da halayen sinadarai a saman wafer silicon don samar da fim din oxide.
Rashin tsabta: yana nufin yin amfani da ka'idodin watsawa na thermal a ƙarƙashin yanayin zafi mai zafi don gabatar da abubuwa marasa tsabta a cikin siliki na siliki bisa ga buƙatun tsari, don haka yana da ƙayyadaddun rarraba hankali, don haka canza kayan lantarki na kayan silicon.
Annealing yana nufin tsarin dumama wafer siliki bayan dasa ion don gyara lahani na lattice da ion implantation ya haifar.
Akwai nau'ikan kayan aiki na asali guda uku da ake amfani da su don iskar oxygen / yaduwa / annealing:
- Tanderun kwance;
- Tanderun tsaye;
- Murfin dumama mai sauri: kayan aikin maganin zafi mai sauri
Hanyoyin maganin zafi na gargajiya galibi suna amfani da dogon lokaci mai zafi mai zafi don kawar da lalacewa ta hanyar dasa ion, amma rashin amfanin sa shine rashin cikar aibi da ƙarancin kunnawa na gurɓataccen dasa.
Bugu da ƙari, saboda yawan zafin jiki na annealing da kuma tsawon lokaci, mai yiwuwa sake rarraba ƙazanta na iya faruwa, yana haifar da ƙazanta mai yawa don yaduwa kuma ya kasa cika buƙatun maɗaukaki masu zurfi da ƙunƙarar ƙazanta.
Rapid thermal annealing na ion-dasa wafers ta amfani da gaggawa thermal sarrafa kayan aiki (RTP) hanya ce ta maganin zafi da ke dumama wafer gabaɗaya zuwa wani zafin jiki (gaba ɗaya 400-1300°C) cikin kankanin lokaci.
Idan aka kwatanta da dumama tanderu annealing, yana da abũbuwan amfãni daga m thermal kasafin kudin, karami kewayon najasa motsi a cikin doping yankin, kasa gurbatawa da kuma guntu aiki lokaci.
Tsarin daɗaɗɗen zafin jiki mai sauri zai iya amfani da hanyoyin samar da makamashi iri-iri, kuma lokacin daɗaɗɗen lokaci yana da faɗi sosai (daga 100 zuwa 10-9s, irin su ƙyalli na fitila, cirewar laser, da sauransu). Yana iya kunna ƙazanta gaba ɗaya yayin da yake hana sake rarraba ƙazanta yadda ya kamata. A halin yanzu ana amfani dashi ko'ina a cikin manyan hanyoyin masana'antu masu haɗaɗɗun kewayawa tare da diamita na wafer fiye da 200mm.
2. Tsarin dumama na biyu
2.1 Tsarin Oxidation
A cikin tsarin masana'antar da'ira da aka haɗa, akwai hanyoyi guda biyu don ƙirƙirar fina-finai na silicon oxide: iskar shakawar thermal da sakawa.
Tsarin hadawan abu da iskar shaka yana nufin tsarin samar da SiO2 akan saman siliki wafers ta hanyar iskar oxygen ta thermal. Fim ɗin SiO2 da aka kirkira ta hanyar iskar oxygen ta thermal ana amfani da shi sosai a cikin tsarin masana'antar haɗaɗɗun da'irar saboda ingantaccen kaddarorin wutar lantarki da yuwuwar aiwatarwa.
Muhimman aikace-aikacen sa sune kamar haka:
- Kare na'urori daga karce da gurɓatawa;
- Ƙayyadad da keɓancewar filin na masu dakon kaya (fasalin wucewa);
- Dielectric kayan a cikin kofa oxide ko ajiya tsarin cell;
- Sanya masking a cikin doping;
- Dielectric Layer tsakanin karfe conductive yadudduka.
(1)Kariyar na'ura da warewa
SiO2 da aka girma a saman wafer (wafer siliki) na iya zama ingantacciyar shinge mai shinge don ware da kare na'urori masu mahimmanci a cikin siliki.
Saboda SiO2 abu ne mai wuya kuma mara ƙarfi (mai yawa), ana iya amfani dashi don ware na'urori masu aiki yadda ya kamata akan saman silicon. Layin SiO2 mai wuya zai kare wafer silicon daga karce da lalacewa da ka iya faruwa yayin aikin masana'anta.
(2)Surface passivation
Passivation Surface Babban fa'idar SiO2 mai girma shine cewa zai iya rage girman yanayin silikon ta hanyar takura masa ɗaurin gindi, wani sakamako da aka sani da wucewar saman.
Yana hana lalata wutar lantarki kuma yana rage hanyar ɗigogi a halin yanzu wanda danshi, ions ko wasu gurɓataccen waje ke haifarwa. Babban Layer SiO2 yana kare Si daga karce da aiwatar da lalacewa wanda zai iya faruwa yayin samarwa bayan samarwa.
Layin SiO2 da aka girma akan saman Si zai iya ɗaure gurɓatattun abubuwan da ke aiki da wutar lantarki (lalacewar ion ta hannu) akan saman Si. Passivation kuma yana da mahimmanci don sarrafa ɗigogi na na'urorin haɗin gwiwa da haɓaka bargawar gate oxides.
A matsayin babban ingantacciyar hanyar wucewa, Layer oxide yana da buƙatun inganci kamar kauri iri ɗaya, babu ramuka da ɓoyayyiya.
Wani abu na amfani da oxide Layer a matsayin Si surface passivation Layer shine kauri na oxide Layer. Dole ne Layer oxide ya kasance mai kauri wanda zai hana layin karfe daga caji saboda cajin tarawa akan saman silicon, wanda yayi kama da cajin ajiya da halaye na rushewar capacitors na yau da kullun.
SiO2 kuma yana da kwatankwacin daidaiton haɓakar haɓakar thermal zuwa Si. Silicon wafers suna faɗaɗa yayin matakan zafin jiki da kwangila yayin sanyaya.
SiO2 yana faɗaɗa ko kwangila a wani ƙimar kusa da na Si, wanda ke rage warping na wafer silicon yayin aikin zafi. Wannan kuma yana guje wa rabuwa da fim din oxide daga saman siliki saboda damuwa na fim.
(3)Gate oxide dielectric
Don tsarin oxide da aka fi amfani da shi da mahimmanci a cikin fasahar MOS, ana amfani da Layer oxide na bakin ciki sosai azaman kayan aikin dielectric. Tun da Layer oxide Layer da Si a ƙasa suna da halaye na inganci da kwanciyar hankali, ƙirar ƙofa oxide gabaɗaya ana samun ta ta haɓakar thermal.
SiO2 yana da babban ƙarfin dielectric (107V/m) da kuma babban juriya (kimanin 1017Ω · cm).
Makullin amincin na'urorin MOS shine amincin layin oxide gate. Tsarin ƙofa a cikin na'urorin MOS yana sarrafa kwararar halin yanzu. Domin wannan oxide shine tushen aikin microchips bisa fasahar tasirin filin,
Saboda haka, high quality, m film kauri uniformity da rashi na impurities su ne ainihin bukatun. Duk wani gurɓataccen abu da zai iya ƙasƙantar da aikin ginin gate oxide dole ne a sarrafa shi sosai.
(4)shamakin kara kuzari
Ana iya amfani da SiO2 azaman ingantaccen abin rufe fuska don zaɓin doping na saman silicon. Da zarar an kafa Layer oxide akan saman silikon, SiO2 a cikin ɓangaren zahiri na abin rufe fuska an tsara shi don samar da taga wanda kayan doping zai iya shiga cikin wafer silicon.
Inda babu tagogi, oxide na iya kare saman siliki kuma ya hana ƙazanta daga yaɗuwa, don haka yana ba da damar dasa ƙazanta na zaɓi.
Dopants suna motsawa a hankali a cikin SiO2 idan aka kwatanta da Si, don haka kawai ana buƙatar Layer oxide na bakin ciki don toshe dopants (lura cewa wannan ƙimar ya dogara da yanayin zafi).
Hakanan za'a iya amfani da Layer oxide na bakin ciki (misali, kauri 150 Å) a wuraren da ake buƙatar dasa ion, wanda za'a iya amfani dashi don rage lalacewa ga saman siliki.
Hakanan yana ba da damar mafi kyawun sarrafa zurfin junction yayin dasawa na ƙazanta ta hanyar rage tasirin tashoshi. Bayan dasawa, ana iya cire oxide da zaɓaɓɓen tare da hydrofluoric acid don sake mayar da saman siliki.
(5)Dielectric Layer tsakanin karfe yadudduka
SiO2 baya gudanar da wutar lantarki a ƙarƙashin yanayin al'ada, don haka yana da insulator mai inganci tsakanin yadudduka na ƙarfe a cikin microchips. SiO2 na iya hana gajerun da'irori tsakanin saman ƙarfe na sama da ƙaramin ƙarfe na ƙasa, kamar yadda insulator akan waya zai iya hana gajerun kewayawa.
Abubuwan da ake buƙata na inganci don oxide shine cewa ba shi da ɓangarorin pinholes da voids. Yawancin lokaci ana yin amfani da shi don samun ingantaccen ruwa mai inganci, wanda zai iya rage yawan yaduwar cutar. Yawancin lokaci ana samun ta ta hanyar tururin sinadari maimakon haɓakar zafi.
Dangane da iskar gas, ana rarraba tsarin iskar oxygen zuwa:
- Busassun iskar oxygen oxidation: Si + O2 → SiO2;
- Wet oxygen hadawan abu da iskar shaka: 2H2O (ruwan tururi) + Si → SiO2 + 2H2;
- Chlorine-doped oxidation: Gas na chlorine, irin su hydrogen chloride (HCl), dichlorethylene DCE (C2H2Cl2) ko abubuwan da suka samo asali, ana kara su zuwa oxygen don inganta ƙimar iskar oxygen da ingancin oxide Layer.
(1)Dry oxygen oxidation tsari: Kwayoyin iskar oxygen da ke cikin iskar gas na amsawa suna bazuwa ta cikin Layer oxide da aka riga aka kafa, suna isa wurin da ke tsakanin SiO2 da Si, suna amsawa da Si, sannan su samar da Layer SiO2.
SiO2 da aka shirya ta bushe iskar oxygen iskar shaka yana da tsari mai yawa, kauri iri-iri, ƙarfin masking mai ƙarfi don allura da watsawa, da babban maimaitawa. Rashin hasara shi ne cewa girman girma yana jinkirin.
Ana amfani da wannan hanyar gabaɗaya don iskar oxygen mai inganci, kamar gate dielectric oxidation, bakin ciki buffer Layer oxidation, ko don fara iskar shaka da ƙarewar iskar shaka a lokacin kauri Layer oxidation.
(2)Rigar oxygen oxidation tsari: Ana iya ɗaukar tururin ruwa kai tsaye a cikin iskar oxygen, ko kuma ana iya samun shi ta hanyar halayen hydrogen da oxygen. Ana iya canza adadin iskar shaka ta hanyar daidaita ma'aunin juzu'i na hydrogen ko tururin ruwa zuwa oxygen.
Lura cewa don tabbatar da aminci, rabon hydrogen zuwa oxygen bai kamata ya wuce 1.88: 1 ba. Jika iskar oxygen iskar shaka shi ne saboda kasancewar iskar oxygen da tururin ruwa a cikin iskar gas, kuma tururin ruwa zai lalace zuwa hydrogen oxide (HO) a yanayin zafi mai girma.
Yawan yaduwar hydrogen oxide a cikin silicon oxide yana da sauri fiye da na iskar oxygen, don haka adadin iskar oxygen jika yana kusan tsari ɗaya na girma sama da busasshiyar iskar oxygen.
(3)Chlorine-doped oxidation tsari: Baya ga busasshen oxygen oxidation na gargajiya da iskar oxygen oxidation, iskar chlorine, irin su hydrogen chloride (HCl), dichlorethylene DCE (C2H2Cl2) ko abubuwan da suka samo asali, ana iya ƙara su zuwa oxygen don haɓaka ƙimar iskar oxygen da ingancin oxide Layer. .
Babban dalilin karuwar yawan iskar oxygen shine lokacin da aka kara sinadarin chlorine don iskar oxygen, ba wai kawai reactant yana dauke da tururin ruwa wanda zai iya hanzarta iskar oxygen ba, amma chlorine kuma yana taruwa kusa da mu'amala tsakanin Si da SiO2. A gaban iskar oxygen, mahadi na chlorosilicon suna sauƙin jujjuya su zuwa silicon oxide, wanda zai iya haifar da iskar oxygen.
Babban dalilin inganta ingancin Layer oxide shine cewa ƙwayoyin chlorine a cikin Layer na oxide na iya tsarkake ayyukan ions sodium, don haka rage lahani na oxyidation da aka gabatar ta hanyar gurɓataccen kayan aiki na sodium ion da kayan aiki. Saboda haka, chlorine doping yana da hannu a yawancin busassun iskar oxygen oxidation matakai.
2.2 Tsarin watsawa
Yadawa na al'ada yana nufin canja wurin abubuwa daga wuraren da ke da girma zuwa wuraren da ke da ƙananan hankali har sai an rarraba su daidai. Tsarin yadawa ya bi dokar Fick. Yadawa na iya faruwa tsakanin abubuwa biyu ko fiye, kuma maida hankali da bambance-bambancen zafin jiki tsakanin wurare daban-daban suna haifar da rarraba abubuwa zuwa yanayin daidaito iri ɗaya.
Ɗaya daga cikin mahimman kaddarorin kayan semiconductor shine cewa ana iya daidaita halayen su ta ƙara nau'ikan nau'ikan nau'ikan dopants daban-daban. A cikin masana'antar da'ira mai haɗaka, ana samun wannan tsari ta hanyar doping ko hanyoyin watsawa.
Dangane da manufofin ƙira, kayan semiconductor kamar silicon, germanium ko na III-V mahadi na iya samun nau'ikan semiconductor guda biyu daban-daban, nau'in N-type ko nau'in P, ta hanyar doping tare da ƙazantattun masu ba da gudummawa ko ƙazantattun masu karɓa.
Semiconductor doping ana aiwatar da shi ta hanyoyi biyu: yaduwa ko ion implantation, kowanne yana da nasa halaye:
Diffusion doping ba shi da tsada, amma taro da zurfin abubuwan doping ba za a iya sarrafa su daidai ba;
Yayin da shigar da ion yana da ɗan tsada, yana ba da damar sarrafa daidaitattun bayanan martaba na dopant.
Kafin shekarun 1970s, girman fasalin fasalin zane-zanen da'ira ya kasance akan tsari na 10μm, kuma ana amfani da fasahar yaduwar zafin jiki gabaɗaya don doping.
Ana amfani da tsarin watsawa galibi don gyara kayan semiconductor. Ta hanyar rarraba abubuwa daban-daban cikin kayan semiconductor, ana iya canza halayen su da sauran kaddarorin jiki.
Misali, ta hanyar watsa sinadarin boron trivalent zuwa silicon, ana samar da wani nau'in semiconductor na nau'in P; ta hanyar yin amfani da abubuwan da ake amfani da su na pentavalent phosphorus ko arsenic, an samar da wani nau'in semiconductor na nau'in N. Lokacin da nau'in na'ura mai nau'in P tare da ƙarin ramuka ya zo cikin hulɗa tare da nau'in semiconductor na nau'in N tare da ƙarin electrons, an kafa haɗin PN.
Kamar yadda girman fasalin ke raguwa, tsarin watsawar isotropic yana ba da damar dopants don yaduwa zuwa ɗayan ɓangaren garkuwar oxide, yana haifar da gajeren wando tsakanin yankuna da ke kusa.
Ban da wasu fa'idodi na musamman (kamar watsawa na dogon lokaci don samar da wuraren juriya masu ƙarfi da aka rarraba iri ɗaya), a hankali an maye gurbin tsarin watsawa da ion implantation.
Duk da haka, a cikin fasahar fasahar da ke ƙasa da 10nm, tun da girman Fin a cikin na'ura mai mahimmanci na fin fili mai girma (FinFET) yana da ƙananan ƙananan, dasa ion zai lalata ƙananan tsarinsa. Yin amfani da ingantaccen tsarin yada tushen tushe na iya magance wannan matsalar.
2.3 Tsarin lalacewa
Hakanan ana kiran tsarin cirewar thermal annealing. Tsarin shine sanya wafer siliki a cikin yanayin zafi mai zafi na wani ɗan lokaci don canza microstructure a saman ko cikin wafern silicon don cimma takamaiman manufar tsari.
Mafi mahimmancin ma'auni a cikin tsarin annealing shine zafin jiki da lokaci. Mafi girman yawan zafin jiki da tsawon lokaci, mafi girma kasafin kudin thermal.
A cikin haƙiƙanin haɗe-haɗen tsarin kera da'ira, kasafin zafin zafi ana sarrafa shi sosai. Idan akwai matakai da yawa na annealing a cikin tafiyar matakai, za a iya bayyana kasafin kudin thermal a matsayin babban matsayi na jiyya na zafi da yawa.
Duk da haka, tare da miniaturization na tsari nodes, da izinin thermal kasafin kudin a cikin dukan tsari ya zama karami da karami, wato, yawan zafin jiki na high-zazzabi thermal tsari ya zama ƙasa da kuma lokaci ya zama ya fi guntu.
Yawancin lokaci, ana haɗuwa da tsari na annealing tare da ion implantation, na bakin ciki jigon fim, samuwar silicide karfe da sauran matakai. Mafi na kowa shi ne zafin jiki annealing bayan dasa ion.
Shigar da ion zai yi tasiri ga ƙwayoyin zarra, yana haifar da su rabu da ainihin tsarin lattice kuma suna lalata ƙwanƙwasa. Rushewar zafin jiki na iya gyara lalacewar lattice da ion implantation ya haifar kuma yana iya matsar da atom ɗin najasa da aka dasa daga raƙuman raƙuman raƙuman ruwa zuwa wuraren raƙuman ruwa, ta haka yana kunna su.
Matsakaicin zafin da ake buƙata don gyara lalacewar lattice shine kusan 500 ° C, kuma zafin da ake buƙata don kunna ƙazanta shine kusan 950 ° C. A ka'idar, tsawon lokacin da za a cirewa kuma mafi girman zafin jiki, mafi girman adadin kunnawa na ƙazanta, amma kuma yawan kasafin kuɗi na thermal zai haifar da yaduwar ƙazanta mai yawa, yana sa tsarin ya zama wanda ba a iya sarrafawa ba kuma yana haifar da lalacewa na na'ura da aikin da'ira.
Don haka, tare da haɓaka fasahar kere-kere, an maye gurbin gurɓatar tanderu na dogon lokaci a hankali da saurin rage zafi (RTA).
A cikin tsarin masana'anta, wasu takamaiman fina-finai suna buƙatar aiwatar da tsarin kawar da zafin jiki bayan sanyawa don canza wasu abubuwan zahiri ko sinadarai na fim ɗin. Misali, fim maras kyau ya zama mai yawa, yana canza bushewar sa ko rigar etching;
Wani tsari da aka saba amfani da shi na annealing yana faruwa a lokacin samuwar silicide karfe. Fina-finan ƙarfe irin su cobalt, nickel, titanium, da dai sauransu suna fantsama a saman waƙar siliki, kuma bayan saurin zafi da zafi a ƙananan zafin jiki, ƙarfe da silicon na iya samar da gami.
Wasu karafa suna yin nau'ikan gami daban-daban a ƙarƙashin yanayin zafi daban-daban. Gabaɗaya, ana fatan samar da lokaci na gami tare da ƙarancin juriya da juriya na jiki yayin aiwatarwa.
Dangane da buƙatun kasafin kuɗi na thermal daban-daban, tsarin annashuwa ya kasu kashi biyu na murɗawar tanderu mai zafi da saurin kawar da zafi.
- High zafin jiki tanderu bututu annealing:
Hanya ce ta al'ada ta annealing tare da yawan zafin jiki, dogon lokacin jin daɗi da babban kasafin kuɗi.
A cikin wasu matakai na musamman, kamar fasahar keɓewar allurar oxygen don shirya abubuwan SOI da hanyoyin watsawa mai zurfi, ana amfani da shi sosai. Irin waɗannan hanyoyin gabaɗaya suna buƙatar ƙarin kasafin zafin zafi don samun cikakkiyar rabe-rabe ko rarraba ƙazanta iri ɗaya.
- Rapid Thermal Annealing:
Hanya ce ta sarrafa wafern silicon ta hanyar ɗumama sosai / sanyaya da ɗan gajeren zama a yanayin zafin da aka yi niyya, wani lokacin kuma ana kiranta Rapid Thermal Processing (RTP).
A cikin tsarin samar da mahaɗar matsananci-ƙasa, saurin kawar da zafin jiki yana samun daidaitawa tsakanin gyare-gyaren lahani, kunna ƙazanta, da rage ƙazantar ƙazanta, kuma yana da mahimmanci a cikin tsarin masana'anta na nodes na fasaha na ci gaba.
Tsarin hawan zafin jiki/faɗuwa da ɗan gajeren zama a maƙasudin zafin jiki tare sun ƙunshi kasafin zafi na saurin kawar da zafi.
Matsakaicin saurin zafi na gargajiya yana da zafin jiki kusan 1000 ° C kuma yana ɗaukar daƙiƙa. A cikin 'yan shekarun nan, buƙatun buƙatun zafin zafi na gaggawa sun ƙara yin ƙarfi, kuma ɓarkewar walƙiya, ƙayar da karu, da cirewar laser a hankali sun haɓaka, tare da lokutan ɓarna ya kai milliseconds, har ma suna ƙoƙarin haɓaka zuwa microseconds da sub-microseconds.
3 . Kayan aikin dumama guda uku
3.1 Yaduwa da kayan aikin iskar shaka
Tsarin watsawa galibi yana amfani da ka'idar watsawar thermal a ƙarƙashin yanayin zafi mai yawa (yawanci 900-1200 ℃) yanayi don haɗa abubuwa masu ƙazanta a cikin ma'aunin silicon a zurfin da ake buƙata don ba shi takamaiman rarraba taro, don canza kayan lantarki na abu da samar da tsarin na'urar semiconductor.
A cikin fasahar da'ira na haɗin gwiwar silicon, ana amfani da tsarin watsawa don yin mahaɗar PN ko abubuwan haɗin gwiwa kamar su resistors, capacitors, wiring interconnect, diodes da transistor a cikin haɗaɗɗun da'irori, kuma ana amfani dashi don keɓance tsakanin abubuwan haɗin gwiwa.
Sakamakon rashin iya sarrafa daidaitaccen rarraba maida hankali na doping, tsarin yaduwa a hankali an maye gurbin shi ta hanyar ion implantation doping tsari a cikin kera na'urori masu haɗaka tare da diamita na wafer na 200 mm da sama, amma har yanzu ana amfani da ƙaramin adadin a cikin nauyi. hanyoyin doping.
Kayan aikin watsawa na gargajiya galibi su ne tanderun watsawa a kwance, kuma akwai kuma ƴan ƙananan murhun murhun wuta a tsaye.
A kwance tanderu:
Kayan aikin zafi ne da ake amfani da shi sosai a cikin tsarin watsawa na haɗaɗɗun da'irori tare da diamita na wafer ƙasa da 200mm. Halayensa shine cewa jikin wutar lantarki mai dumama, bututu mai amsawa da kwale-kwalen ma'adini da ke ɗauke da wafers duk an sanya su a kwance, don haka yana da halayen tsari na daidaitattun daidaito tsakanin wafers.
Ba wai kawai ɗayan mahimman kayan aikin gaba ba ne akan layin samar da keɓaɓɓiyar haɗin gwiwar, amma kuma ana amfani da shi sosai a cikin watsawa, iskar shaka, annealing, alloying da sauran matakai a cikin masana'antu kamar na'urori masu hankali, na'urorin lantarki na lantarki, na'urorin optoelectronic da fiber na gani. .
Tanderun watsawa a tsaye:
Gabaɗaya yana nufin kayan aikin jiyya na zafi da aka yi amfani da su a cikin tsarin da'ira mai haɗaka don wafers tare da diamita na 200mm da 300mm, wanda aka fi sani da tanderu a tsaye.
Siffofin tsarin tanderun watsawa a tsaye su ne cewa jikin tanderun dumama, bututun dauki da jirgin ruwa na ma'adini da ke dauke da wafer duk an sanya su a tsaye, kuma ana sanya wafer a kwance. Yana da halaye na ingantacciyar daidaituwa a cikin wafer, babban matakin sarrafa kansa, da ingantaccen tsarin aiki, wanda zai iya biyan buƙatun manyan layukan samar da kewaye.
Tanderun watsawa a tsaye yana ɗaya daga cikin mahimman kayan aiki a cikin layin samar da wutar lantarki na semiconductor kuma ana amfani da su a cikin hanyoyin da ke da alaƙa a fagen na'urorin lantarki (IGBT) da sauransu.
A tsaye yaduwa tanderu ne m zuwa hadawan abu da iskar shaka matakai kamar busassun oxygen hadawan abu da iskar shaka, hydrogen-oxygen kira hadawan abu da iskar shaka, silicon oxynitride hadawan abu da iskar shaka oxidation, da bakin ciki film girma tafiyar matakai kamar silicon dioxide, polysilicon, silicon nitride (Si3N4), da atomic Layer ajiya.
Har ila yau, ana amfani da shi sosai a cikin zafin jiki mai zafi, cirewar tagulla da tsarin hadawa. Dangane da tsarin watsawa, ana amfani da tanderun watsawa a tsaye a wasu lokuta a cikin matakan ƙara kuzari.
3.2 Kayan aikin annealing da sauri
Kayan aiki na Rapid Thermal Processing (RTP) kayan aikin zafi ne guda ɗaya wanda zai iya ɗaga zafin wafer da sauri zuwa yanayin da ake buƙata (200-1300 ° C) kuma zai iya kwantar da shi da sauri. Yawan dumama/ sanyaya gabaɗaya 20-250°C/s.
Baya ga nau'ikan hanyoyin samar da makamashi da lokacin kashewa, kayan aikin RTP kuma suna da sauran kyakkyawan aikin aiwatarwa, kamar kyakkyawan kula da kasafin kuɗi na thermal da ingantacciyar daidaituwar farfajiya (musamman ga manyan wafers), gyara lalacewar wafer ta hanyar ion implantation, da ɗakunan da yawa na iya tafiyar matakai daban-daban na tsari lokaci guda.
Bugu da ƙari, kayan aikin RTP na iya canzawa da sauri da sauri da kuma daidaita tsarin iskar gas, ta yadda za a iya kammala matakan maganin zafi da yawa a cikin tsarin maganin zafi.
Ana amfani da kayan aikin RTP da yawa a cikin saurin kawar da zafi (RTA). Bayan dasa ion, ana buƙatar kayan aikin RTP don gyara lalacewar da aka haifar da ion implantation, kunna protons na doped da kuma hana yaduwar ƙazanta yadda ya kamata.
Gabaɗaya magana, zafin jiki don gyara lahani na lattice shine kusan 500 ° C, yayin da ake buƙatar 950 ° C don kunna atom ɗin doped. Kunna najasa yana da alaƙa da lokaci da zafin jiki. Tsawon lokacin da zafin jiki ya fi girma, ana kunna ƙazanta sosai, amma ba ta da amfani don hana yaduwar ƙazanta.
Saboda kayan aikin RTP suna da sifofin haɓakar zafin jiki mai sauri / faɗuwa da ɗan gajeren lokaci, tsarin annealing bayan ion implantation zai iya cimma mafi kyawun zaɓi na sigina tsakanin gyaran lahani na lattice, kunnawa da ƙazanta da hanawa na ƙazanta.
RTA yafi karkasu zuwa rukunai hudu masu zuwa:
(1)Karu Annealing
Halinsa shine yana mai da hankali kan saurin dumama / sanyaya tsari, amma asali ba shi da tsarin adana zafi. Ƙarƙashin karu yana tsayawa a babban zafin jiki na ɗan gajeren lokaci, kuma babban aikinsa shine kunna abubuwan ƙara kuzari.
A ainihin aikace-aikace, wafer ɗin yana fara zafi da sauri daga wani tsayayyen yanayin yanayin jiran aiki kuma nan da nan ya yi sanyi bayan ya kai maƙasudin zazzabi.
Tunda lokacin kiyayewa a wurin da ake niyya (watau madaidaicin zafin jiki) gajere ne sosai, tsarin cirewa zai iya haɓaka ƙimar kunna ƙazanta da rage girman yaduwar ƙazanta, yayin da yana da kyakkyawan lahani na haɓaka halayen gyara, yana haifar da mafi girma. bonding ingancin da ƙananan yayyo halin yanzu.
Ana amfani da karu annealing a ko'ina a cikin matsananciyar matsananciyar tafiyar matakai bayan 65nm. Siffofin aiwatar da karu sun haɗa da zafi kololuwa, lokacin zaman kololuwa, bambancin zafin jiki da juriyar wafer bayan aiwatarwa.
Gajarta mafi girman lokacin zama, mafi kyau. Ya dogara ne akan yawan dumama/ sanyaya tsarin kula da zafin jiki, amma yanayin da aka zaɓa na gas ɗin da aka zaɓa wani lokacin ma yana da wani tasiri akansa.
Misali, helium yana da ƙaramin ƙarar atomic da saurin yaduwa, wanda ke taimakawa ga saurin canja wurin zafi iri ɗaya kuma yana iya rage tsayin faɗin kololuwar lokacin zama. Saboda haka, wani lokacin ana zaɓar helium don taimakawa dumama da sanyaya.
(2)Fitilar Annealing
Ana amfani da fasahar datse fitilu sosai. Ana amfani da fitilun halogen gabaɗaya azaman tushen zafi mai saurin ruɗewa. Yawan dumama / sanyaya su da madaidaicin sarrafa zafin jiki na iya saduwa da buƙatun hanyoyin masana'antu sama da 65nm.
Koyaya, ba zai iya cika ƙaƙƙarfan buƙatun tsarin 45nm ba (bayan tsarin 45nm, lokacin da tuntuɓar nickel-silicon na ma'anar LSI ta faru, wafer ɗin yana buƙatar mai zafi da sauri daga 200 ° C zuwa sama da 1000 ° C a cikin milliseconds, don haka ana buƙatar annealing laser gabaɗaya).
(3)Laser Annealing
Laser annealing tsari ne na yin amfani da Laser kai tsaye don ƙara yawan zafin jiki na saman wafer har sai ya isa ya narke crystal na silicon, yana sa ya kunna sosai.
Abubuwan da ake amfani da su na annealing Laser sune dumama da sauri da kulawa mai mahimmanci. Ba ya buƙatar dumama filament kuma a zahiri babu matsaloli tare da ƙarancin zafin jiki da rayuwar filament.
Koyaya, ta fuskar fasaha, annealing Laser yana da ɗigogi a halin yanzu da matsalolin lahani, wanda kuma zai sami wani tasiri akan aikin na'urar.
(4)Flash Annealing
Flash annealing fasaha ce mai ɓarna da ke amfani da babban zafin radiation don yin karu a kan wafers a takamaiman zafin jiki mai zafi.
Ana sa wafer ɗin zafi zuwa 600-800 ° C, sa'an nan kuma ana amfani da radiation mai tsanani don gajeren lokaci. Lokacin da kololuwar zazzabi na wafer ya kai zafin da ake buƙata, ana kashe radiation nan da nan.
Ana ƙara amfani da kayan aikin RTP a cikin masana'antun da'ira na ci gaba.
Bugu da ƙari, ana amfani da shi sosai a cikin hanyoyin RTA, kayan aikin RTP kuma sun fara amfani da su a cikin saurin iskar oxygen mai zafi, saurin nitridation na thermal, saurin yaduwar zafi, saurin ƙwayar tururi na sinadarai, da kuma samar da silicide na ƙarfe da kuma tsarin epitaxial.
——————————————————————————————————————————————————— --
Semicera na iya bayarwasassa graphite,taushi / m ji,silicon carbide sassa,CVD silicon carbide sassa, kumaSiC/TaC rufaffiyar sassatare da cikakken tsari na semiconductor a cikin kwanaki 30.
Idan kuna sha'awar samfuran semiconductor na sama,don Allah kar a yi shakka a tuntube mu a farkon lokaci.
Lambar waya: +86-13373889683
WhatsApp: +86-15957878134
Email: sales01@semi-cera.com
Lokacin aikawa: Agusta-27-2024