Haɓaka da Aikace-aikace na Silicon Carbide (SiC)
1. Ƙarni na Ƙarni a SiC
Tafiya ta silicon carbide (SiC) ta fara ne a cikin 1893, lokacin da Edward Goodrich Acheson ya kera tanderun Acheson, ta amfani da kayan carbon don cimma samar da masana'antu na SiC ta hanyar dumama wutar lantarki na ma'adini da carbon. Wannan ƙirƙira ta nuna alamar farkon masana'antar SiC kuma ta sami Acheson ta haƙƙin mallaka.
A farkon karni na 20, SiC an yi amfani da shi da farko azaman abin ƙyama saboda taurinsa na ban mamaki da juriya. A tsakiyar karni na 20, ci gaban fasahar tururi na sinadari (CVD) ya buɗe sabbin damammaki. Masu bincike a Bell Labs, wanda Rustum Roy ya jagoranta, sun aza harsashi ga CVD SiC, suna cimma farkon suturar SiC akan saman graphite.
1970s sun ga babban ci gaba lokacin da Union Carbide Corporation ta yi amfani da graphite mai rufin SiC a cikin ci gaban epitaxial na gallium nitride (GaN) semiconductor kayan. Wannan ci gaban ya taka muhimmiyar rawa a manyan LEDs na tushen GaN da lasers. A cikin shekarun da suka gabata, suturar SiC ta haɓaka sama da na'urori masu auna sigina zuwa aikace-aikace a cikin sararin samaniya, motoci, da na'urorin lantarki, godiya ga haɓaka fasahar kere kere.
A yau, sabbin abubuwa kamar feshin thermal, PVD, da nanotechnology suna ƙara haɓaka aiki da aikace-aikacen suturar SiC, suna nuna yuwuwar sa a cikin filayen yankan.
2. Fahimtar SiC's Crystal Structures da Amfani
SCC ya faharfafa fiye da polytypes 200, an rarraba shi ta tsarin atomic cikin Cubic (3C), hexagonal (h), da rhombalal. Daga cikin waɗannan, 4H-SiC da 6H-SiC ana amfani da su sosai a cikin manyan iko da na'urori na optoelectronic, bi da bi, yayin da β-SiC ke da ƙima don haɓakar yanayin zafi mafi girma, juriya, da juriya na lalata.
β-SiCmusamman kaddarorin, kamar thermal conductivity na120-200 W/m·Kda thermal fadada coefficient kusa da matching graphite, sanya shi ya fi so abu don saman coatings a wafer epitaxy kayan aiki.
3. SiC Coatings: Kayayyaki da Dabarun Shirye-shiryen
SiC, yawanci β-SiC, ana amfani da su sosai don haɓaka kaddarorin saman kamar taurin, juriya, da kwanciyar hankali na thermal. Hanyoyin shiri gama gari sun haɗa da:
- Zubar da Turin Chemical (CVD):Yana ba da kayan kwalliya masu inganci tare da mannewa mai kyau da daidaituwa, manufa don manyan abubuwa masu rikitarwa.
- Turin Jiki (PVD):Yana ba da ingantaccen iko akan abun da ke ciki, wanda ya dace da aikace-aikacen madaidaici.
- Dabarun fesa, Jigilar Electrochemical, da Rufin Rufe: Yi aiki azaman madadin farashi mai tsada don takamaiman aikace-aikace, kodayake tare da iyakoki daban-daban a mannewa da daidaituwa.
An zaɓi kowace hanya bisa ga halaye da buƙatun aikace-aikace.
4. SiC-Rufaffen Graphite Susceptors a cikin MOCVD
SiC-mai rufin graphite susceptors ba makawa a cikin Metal Organic Chemical Vapor Deposition (MOCVD), wani mahimmin tsari a cikin semiconductor da masana'antar kayan optoelectronic.
Wadannan masu cutarwa suna ba da tallafi mai ƙarfi don haɓaka fim ɗin epitaxial, tabbatar da kwanciyar hankali na thermal da rage gurɓataccen ƙazanta. Har ila yau, murfin SiC yana haɓaka juriya na iskar shaka, kaddarorin ƙasa, da ingancin dubawa, yana ba da damar daidaitaccen iko yayin ci gaban fim.
5. Cigaba Zuwa Gaba
A cikin 'yan shekarun nan, an yi yunƙurin yin yunƙurin inganta ayyukan samar da sinadarai masu rufaffiyar graphite. Masu bincike suna mai da hankali kan haɓaka tsabtataccen sutura, daidaituwa, da tsawon rayuwa yayin rage farashi. Bugu da ƙari, binciken sabbin abubuwa kamarTantalum carbide (TaC).yana ba da yuwuwar haɓakawa a cikin haɓakar yanayin zafi da juriya na lalata, yana ba da hanya don mafita na gaba.
Kamar yadda buƙatun masu saɓo na graphite mai rufin SiC ke ci gaba da haɓaka, ci gaban masana'antu na fasaha da samar da sikelin masana'antu zai ƙara tallafawa haɓaka samfuran inganci don biyan buƙatun ci gaba na masana'antar semiconductor da optoelectronics.
Lokacin aikawa: Nuwamba-24-2023