Semicera Semiconductor yana shirin haɓaka samar da mahimman abubuwan haɗin gwiwar kayan aikin masana'antar semiconductor a duniya. By 2027, muna nufin kafa sabuwar masana'anta murabba'in mita 20,000 tare da jimlar zuba jari na 70 miliyan USD. Ɗaya daga cikin mahimman abubuwan da muke buƙata, dasilicon carbide (SiC) mai ɗaukar wafer, wanda kuma aka sani da mai cutarwa, ya ga gagarumin ci gaba. To, menene ainihin wannan tire da ke riƙe da wafers?
A cikin tsarin masana'antar wafer, an gina yadudduka na epitaxial akan wasu ma'aunin wafer don ƙirƙirar na'urori. Misali, GaAs epitaxial yadudduka an shirya su akan silin siliki don na'urorin LED, SiC epitaxial yadudduka ana girma akan abubuwan SiC masu ɗaukar nauyi don aikace-aikacen wutar lantarki kamar SBDs da MOSFETs, da GaN epitaxial yadudduka an gina su akan simin-insulating SiC substrates don aikace-aikacen RF kamar HEMTs. . Wannan tsari ya dogara sosaisinadaran tururi (CVD)kayan aiki.
A cikin kayan aiki na CVD, ba za a iya sanya maɓalli kai tsaye a kan ƙarfe ko tushe mai sauƙi don jigilar epitaxial saboda dalilai daban-daban kamar kwararar gas (a kwance, tsaye), zazzabi, matsa lamba, kwanciyar hankali, da gurɓatawa. Sabili da haka, ana amfani da mai ɗaukar hoto don sanya substrate a kan, yana ba da damar jigilar epitaxial ta amfani da fasahar CVD. Wannan susceptor shineSiC mai rufin graphite susceptor.
SiC-mai rufin graphite susceptors yawanci ana amfani da su a cikin kayan aikin ƙarfe-Organic Chemical Vapor Deposition (MOCVD) kayan aiki don tallafawa da ɗora matattarar lu'ulu'u ɗaya. The thermal kwanciyar hankali da kuma uniformity na SiC-mai rufin graphite susceptorssuna da mahimmanci don haɓaka ingancin kayan epitaxial, yana mai da su babban ɓangaren kayan aikin MOCVD (jagabannin kamfanonin kayan aikin MOCVD kamar Veeco da Aixtron). A halin yanzu, ana amfani da fasahar MOCVD sosai a cikin ci gaban epitaxial na fina-finai na GaN don blue LEDs saboda sauƙi, ƙimar girma mai sarrafawa, da kuma tsabta. A matsayin muhimmin sashi na MOCVD reactor, damai cutarwa ga GaN film epitaxial girmadole ne ya kasance yana da tsayin daka mai zafi, daidaitaccen yanayin zafi, kwanciyar hankali na sinadarai, da juriya mai ƙarfi na thermal. Graphite ya cika waɗannan buƙatun daidai.
A matsayin babban ɓangaren kayan aikin MOCVD, mai ɗaukar hoto na graphite yana goyan baya kuma yana dumama ƙwanƙwasa guda-crystal, kai tsaye yana shafar daidaituwa da tsabtar kayan fim. Ingancin sa yana tasiri kai tsaye shirye-shiryen wafers na epitaxial. Koyaya, tare da ƙarin amfani da yanayin aiki daban-daban, masu ɗaukar hoto na graphite suna da sauƙin lalacewa kuma ana ɗaukar su azaman abin amfani.
MOCVD masu cutarwabuƙatar samun wasu halaye na sutura don biyan buƙatun masu zuwa:
- - Kyakkyawan ɗaukar hoto:Dole ne murfin ya rufe gaba ɗaya mai ɗaukar hoto tare da babban yawa don hana lalata a cikin yanayin iskar gas mai lalata.
- -High bonding ƙarfi:Dole ne rufin ya haɗu da ƙarfi ga mai ɗaukar hoto, jure yanayin zafi da ƙarancin zafi da yawa ba tare da barewa ba.
- -Natsuwa na sinadarai:Dole ne suturar ta kasance tabbatacciyar sinadari don guje wa gazawa a cikin yanayin zafi mai zafi da lalata.
SiC, tare da juriya na lalata, haɓakar yanayin zafi mai girma, juriya na zafi mai zafi, da babban kwanciyar hankali na sinadarai, yana aiki da kyau a cikin yanayin GaN epitaxial. Bugu da ƙari, ƙimar faɗaɗa zafin zafi na SiC yayi kama da graphite, yana mai da SiC kayan da aka fi so don suturar graphite susceptor.
A halin yanzu, nau'ikan SiC na gama gari sun haɗa da 3C, 4H, da 6H, kowanne ya dace da aikace-aikace daban-daban. Misali, 4H-SiC na iya samar da na'urori masu ƙarfi, 6H-SiC yana da kwanciyar hankali kuma ana amfani dashi don na'urorin optoelectronic, yayin da 3C-SiC yayi kama da tsarin GaN, yana sa ya dace da samar da Layer epitaxial GaN da na'urorin SiC-GaN RF. 3C-SiC, wanda aka fi sani da β-SiC, ana amfani da shi ne a matsayin fim da kayan shafa, yana mai da shi abu na farko don sutura.
Akwai hanyoyi daban-daban don shiryawaFarashin SiC, ciki har da sol-gel, haɗawa, gogewa, fesa plasma, halayen tururi na sinadarai (CVR), da ƙwayar tururi (CVD).
Daga cikin waɗannan, hanyar haɗawa shine tsari mai ƙarfi mai ƙarfi mai ƙarfi. Ta hanyar sanya faifan graphite a cikin foda mai haɗawa da ke ɗauke da Si da C foda da sintering a cikin yanayin iskar gas mai inert, wani shafi na SiC yana kan ƙirar graphite. Wannan hanya ce mai sauƙi, kuma rufin ya haɗa da kyau tare da substrate. Koyaya, rufin ba shi da kauri iri ɗaya kuma yana iya samun pores, wanda ke haifar da ƙarancin juriya na iskar shaka.
Hanyar Rufi
Hanyar feshi ya haɗa da fesa albarkatun ruwa a saman faifan graphite da kuma warkar da su a takamaiman zafin jiki don samar da shafi. Wannan hanya mai sauƙi ne kuma mai tsada amma yana haifar da haɗin kai mai rauni tsakanin sutura da sutura, rashin daidaituwa mara kyau, da suturar bakin ciki tare da ƙananan juriya na iskar shaka, yana buƙatar hanyoyin taimako.
Hanyar Spraying ion Beam
Ion katako fesa yana amfani da ion katako gun fesa narkakkar ko wani juyi narkakkar kayan a kan graphite substrate surface, forming shafi a kan solidification. Wannan hanya mai sauƙi ce kuma tana samar da suturar SiC masu yawa. Duk da haka, suturar bakin ciki suna da ƙarancin juriya na iskar shaka, sau da yawa ana amfani da su don kayan haɗin gwiwar SiC don inganta inganci.
Hanyar Sol-Gel
Hanyar sol-gel ya haɗa da shirya uniform, bayani na sol na gaskiya, rufe saman ƙasa, da samun suturar bayan bushewa da sintering. Wannan hanya mai sauƙi ne kuma mai tsada amma yana haifar da sutura tare da ƙananan juriya na zafin jiki da kuma sauƙi ga fashewa, yana iyakance aikace-aikacensa mai yaduwa.
Maganganun Ruwan Kemikal (CVR)
CVR yana amfani da Si da SiO2 foda a yanayin zafi mai zafi don samar da tururi na SiO, wanda ke amsawa tare da kayan aikin carbon don samar da suturar SiC. Sakamakon SiC shafi yana haɗuwa tam tare da substrate, amma tsarin yana buƙatar yanayin zafi da farashi mai girma.
Zuba Ruwan Kemikal (CVD)
CVD shine fasaha na farko don shirya suturar SiC. Ya ƙunshi halayen gas-lokaci a kan graphite substrate surface, inda albarkatun kasa sha jiki da kuma sinadaran halayen, ajiya a matsayin SiC shafi. CVD yana samar da suturar SiC masu ƙulla dalla-dalla waɗanda ke haɓaka oxidation na substrate da juriya na ablation. Koyaya, CVD yana da lokuttan ajiya na dogon lokaci kuma yana iya haɗawa da iskar gas mai guba.
Halin Kasuwa
A cikin SiC mai rufin graphite susceptor kasuwa, masana'antun kasashen waje suna da babban jagora da babban rabon kasuwa. Semicera ya shawo kan manyan fasahohin don ci gaban rufin SiC na uniform akan abubuwan graphite, yana ba da mafita waɗanda ke magance ƙayyadaddun yanayin thermal, modules na roba, taurin kai, lahani, da sauran batutuwa masu inganci, cikakken cika buƙatun kayan aikin MOCVD.
Gaban Outlook
Masana'antar semiconductor ta kasar Sin tana haɓaka cikin sauri, tare da haɓaka kayan aikin Epitaxial na MOCVD da faɗaɗa aikace-aikace. Ana sa ran kasuwar susceptor mai rufin SiC za ta yi girma cikin sauri.
Kammalawa
A matsayin wani muhimmin sashi a cikin kayan aikin semiconductor, ƙware ainihin fasahar samarwa da kuma gano masu siyar da graphite mai rufin SiC yana da mahimmanci ga masana'antar semiconductor ta Sin. Filin mai ɗaukar hoto mai rufin SiC na cikin gida yana bunƙasa, tare da ingancin samfur ya kai matakan ƙasashen duniya.Semicerayana ƙoƙari ya zama babban mai samar da kayayyaki a wannan fanni.
Lokacin aikawa: Yuli-17-2024