Silicon carbide (SiC)muhimmin abu ne mai faɗin bandgap semiconductor abu wanda aka yadu ana amfani dashi a cikin manyan na'urorin lantarki masu ƙarfi da mitoci. Wadannan su ne wasu mahimman sigogi nasiliki carbide wafersda cikakken bayaninsu:
Sigar Lattice:
Tabbatar cewa madaidaicin lattice na substrate ya dace da Layer epitaxial don girma don rage lahani da damuwa.
Alal misali, 4H-SiC da 6H-SiC suna da nau'i-nau'i na lattice daban-daban, wanda ke shafar ingancin Layer na epitaxial da aikin na'urar.
Jerin Tari:
SiC yana kunshe da atom na silicon da carbon carbon a cikin 1: 1 rabo akan ma'aunin ma'auni, amma tsarin tsari na yadudduka atomic ya bambanta, wanda zai samar da sifofin crystal daban-daban.
Siffofin crystal na yau da kullun sun haɗa da 3C-SiC (tsari mai siffar sukari), 4H-SiC (tsarin hexagonal), da 6H-SiC (tsarin hexagonal), da jerin abubuwan da suka dace da su sune: ABC, ABCB, ABCACB, da dai sauransu Kowane nau'in crystal yana da nau'ikan lantarki daban-daban. halaye da kaddarorin jiki, don haka zabar nau'in kristal daidai yana da mahimmanci ga takamaiman aikace-aikace.
Mohs Hardness: Yana ƙayyade taurin substrate, wanda ke shafar sauƙin sarrafawa da juriya.
Silicon carbide yana da tsayin daka na Mohs, yawanci tsakanin 9-9.5, yana mai da shi abu mai wuyar gaske wanda ya dace da aikace-aikacen da ke buƙatar juriya mai ƙarfi.
Density: Yana shafar ƙarfin injina da kaddarorin thermal na substrate.
Babban yawa gabaɗaya yana nufin ingantacciyar ƙarfin injina da ƙarancin zafi.
Ƙarfafa Faɗawar Ƙirar zafi: Yana nufin haɓaka tsayi ko ƙarar ma'auni dangane da tsayin asali ko ƙara lokacin da zafin jiki ya tashi da digiri ɗaya Celsius.
Daidaita tsakanin ma'auni da Layer epitaxial a ƙarƙashin canjin zafin jiki yana rinjayar yanayin zafi na na'urar.
Fihirisar Refractive: Don aikace-aikacen gani, fihirisar refractive shine maɓalli mai mahimmanci a ƙirar na'urorin optoelectronic.
Bambance-bambance a cikin fihirisar refractive yana shafar saurin gudu da hanyar raƙuman haske a cikin kayan.
Dielectric Constant: Yana shafar halayen ƙarfin na'urar.
Ƙananan dielectric akai-akai yana taimakawa rage ƙarfin ƙarfin parasitic da inganta aikin na'urar.
Ƙarfafa Ƙarfafawa:
Mahimmanci ga babban iko da aikace-aikacen zafin jiki mai ƙarfi, yana shafar ingancin sanyaya na'urar.
Babban ƙarfin wutar lantarki na silicon carbide ya sa ya dace da na'urorin lantarki masu ƙarfi saboda yana iya sarrafa zafi sosai daga na'urar.
Band-tazarar:
Yana nufin bambancin makamashi tsakanin saman band ɗin valence da kasan band ɗin conduction a cikin kayan semiconductor.
Abubuwan da ke da faɗin rata suna buƙatar ƙarin ƙarfi don haɓaka canjin lantarki, wanda ke sa silicon carbide yayi aiki da kyau a cikin yanayin zafi mai zafi da haɓakar hasken rana.
Filin Lantarki Mai Rushewa:
Iyakar ƙarfin lantarki wanda abu na semiconductor zai iya jurewa.
Silicon carbide yana da babban fashewar filin lantarki, wanda ke ba shi damar jure matsanancin ƙarfin lantarki ba tare da karyewa ba.
Saturation Drift Gudun:
Matsakaicin matsakaicin matsakaicin saurin da masu ɗaukar kaya zasu iya kaiwa bayan an yi amfani da wani filin lantarki a cikin kayan na'ura.
Lokacin da ƙarfin filin lantarki ya ƙaru zuwa wani matakin, saurin mai ɗaukar kaya ba zai ƙara karuwa ba tare da ƙarin haɓaka filin lantarki. Gudun gudu a wannan lokacin ana kiran saturation drift velocity. SiC yana da babban saturation drift gudun, wanda ke da fa'ida don gane na'urorin lantarki masu sauri.
Waɗannan sigogi tare suna ƙayyade aiki da aiki naSiC wafersa cikin aikace-aikace daban-daban, musamman ma waɗanda ke cikin babban ƙarfi, mai ƙarfi da yanayin zafi mai zafi.
Lokacin aikawa: Yuli-30-2024