Menene manyan matakai a cikin sarrafa sinadarai na SiC?

Yadda muke samar da matakan sarrafawa don SiC substrates sune kamar haka:

1. Crystal Orientation: Amfani da X-ray diffraction don daidaita da crystal ingot.Lokacin da fitilar X-ray aka nufa a fuskar kristal da ake so, kusurwar katakon da aka watsar yana ƙayyade madaidaicin crystal.

2. Nikawar Diamita na Waje: Lu'ulu'u guda ɗaya waɗanda aka girma a cikin ginshiƙan graphite sukan wuce daidaitattun diamita.Nika diamita na waje yana rage su zuwa daidaitattun masu girma dabam.

Ƙarshen Fuskar Niƙa: 4-inch 4H-SiC Substrates yawanci suna da gefuna na matsayi biyu, firamare da sakandare.Ƙarshen fuska niƙa yana buɗe waɗannan gefuna na matsayi.

3. Waya Sawing: Waya sawing ne mai muhimmanci mataki a sarrafa 4H-SiC substrates.Kararraki da lalacewar ƙasa da ke haifarwa yayin tsinken waya suna yin tasiri mara kyau ga matakai na gaba, tsawaita lokacin sarrafawa da haifar da asarar abu.Hanyar da ta fi dacewa ita ce sawing multi-waya tare da abrasive lu'u-lu'u.Motsi mai jujjuyawa na wayoyi na ƙarfe da aka haɗa tare da abrasives lu'u-lu'u ana amfani da shi don yanke ingot 4H-SiC.

4. Chamfering: Don hana gefen chipping da rage cinyewa asarar a lokacin m matakai, da kaifi gefuna na waya-sawn kwakwalwan kwamfuta suna chamfered zuwa takamaiman siffofi.

5. Thinning: Waya sawing bar da yawa scratches da sub-surface lalacewa.Ana yin bakin ciki ta amfani da ƙafafun lu'u-lu'u don cire waɗannan lahani gwargwadon yiwuwa.

6. Niƙa: Wannan tsari ya haɗa da niƙa mai laushi da niƙa mai kyau ta hanyar amfani da ƙananan boron carbide ko lu'u-lu'u abrasives don cire ragowar lalacewa da kuma sabon lalacewa da aka gabatar yayin da ake yin bakin ciki.

7. gogewa: Matakan ƙarshe sun haɗa da gogewa mai laushi da gogewa mai kyau ta amfani da abrasives na alumina ko silicon oxide.Ruwan goge-goge yana tausasa saman, wanda sai a cire shi ta hanyar abrasives.Wannan matakin yana tabbatar da santsi kuma mara lahani.

8. Tsaftacewa: Cire barbashi, karafa, fina-finai oxide, ragowar kwayoyin halitta, da sauran gurɓatattun abubuwan da aka bari daga matakan sarrafawa.

SiC epitaxy (2) - 副本(1)(1)


Lokacin aikawa: Mayu-15-2024