Girman Epitaxial fasaha ce da ke tsiro da kristal Layer guda akan madaidaicin kristal guda ɗaya (substrate) tare da daidaitawar crystal iri ɗaya kamar maɗaurin, kamar dai ainihin crystal ya faɗa waje. Wannan sabon girma guda crystal Layer na iya bambanta da substrate cikin sharuddan conductivity nau'in, resistivity, da dai sauransu, kuma zai iya girma Multi-Layer guda lu'ulu'u tare da daban-daban kauri da daban-daban bukatun, don haka ƙwarai inganta sassauci na na'urar zane da kuma na'urar yi. Bugu da kari, ana kuma amfani da tsarin epitaxial sosai a cikin fasahar keɓewar haɗin gwiwa ta PN a cikin haɗaɗɗun da'irori da haɓaka ingancin kayan abu a cikin manyan da'irori masu haɗaka.
Rarraba epitaxy ya dogara ne akan nau'ikan sinadarai daban-daban na substrate da epitaxial Layer da hanyoyin haɓaka daban-daban.
Dangane da nau'ikan sinadarai daban-daban, haɓakar epitaxial na iya kasu kashi biyu:
1. Homoepitaxial:
A wannan yanayin, Layer epitaxial yana da nau'in sinadarai iri ɗaya kamar substrate. Misali, silikon epitaxial yadudduka ana girma kai tsaye akan abubuwan siliki.
2. Heteroepitaxy:
A nan, nau'in sinadarai na Layer epitaxial ya bambanta da na substrate. Misali, gallium nitride epitaxial Layer ana girma akan sapphire substrate.
Dangane da hanyoyin haɓaka daban-daban, fasahar haɓaka epitaxial kuma ana iya raba ta zuwa nau'ikan iri daban-daban:
1. Molecular beam epitaxy (MBE):
Wannan fasaha ce don haɓaka fina-finai na bakin ciki kristal guda ɗaya akan ƙananan kristal guda ɗaya, wanda aka samu ta hanyar sarrafa daidaitaccen yanayin kwararar ƙwayar ƙwayar ƙwayar ƙwayar cuta da ƙarancin katako a cikin matsananciyar matsananci.
2. Karfe-kwayoyin halitta tururin tururi (MOCVD):
Wannan fasaha tana amfani da mahaɗan ƙarfe-kwayoyin ƙarfe da masu gyara gas-lokaci don yin halayen sinadarai a yanayin zafi mai zafi don samar da kayan fim na bakin ciki da ake buƙata. Yana da aikace-aikace masu fadi a cikin shirye-shiryen kayan aikin semiconductor na fili da na'urori.
3. Liquid period epitaxy (LPE):
Ta hanyar ƙara kayan ruwa zuwa madaidaicin kristal guda ɗaya da yin magani mai zafi a wani yanayin zafin jiki, ruwan kayan yana yin crystallizes don samar da fim ɗin crystal guda ɗaya. Fina-finan da wannan fasaha ta shirya sun haɗa da lattice-madaidaicin ma'auni kuma ana amfani da su sau da yawa don shirya kayan aikin semiconductor da na'urori.
4. Tururi lokaci epitaxy (VPE):
Yana amfani da reactant gas don yin halayen sinadaran a yanayin zafi mai zafi don samar da kayan fim na bakin ciki da ake buƙata. Wannan fasaha ya dace da shirya babban yanki, manyan fina-finai na kristal guda ɗaya masu inganci, kuma yana da fice musamman a cikin shirye-shiryen kayan aikin semiconductor da na'urori.
5. Chemical bim epitaxy (CBE):
Wannan fasaha tana amfani da katakon sinadarai don haɓaka fina-finai na kristal guda ɗaya akan ƙwanƙwasa kristal guda ɗaya, wanda aka samu ta hanyar sarrafa daidaitaccen ƙarfin ƙarfin katakon sinadari da yawa. Yana da aikace-aikace masu faɗi a cikin shirye-shiryen fina-finai na bakin ciki masu inganci guda ɗaya.
6. Atomic Layer epitaxy (ALE):
Yin amfani da fasahar jigilar atomic Layer, kayan fim na bakin ciki da ake buƙata ana ajiye su Layer by Layer akan madaidaicin kristal guda ɗaya. Wannan fasaha na iya shirya babban yanki, manyan fina-finai na kristal guda ɗaya masu inganci kuma galibi ana amfani da su don shirya kayan haɗin gwiwar semiconductor da na'urori.
7. Hot bango epitaxy (HWE):
Ta hanyar dumama zafi mai zafi, gaseous reactants ana ajiye a kan guda crystal substrate don samar da guda crystal fim. Wannan fasaha kuma ta dace da shirya manyan yanki, manyan fina-finai na kristal guda ɗaya masu inganci, kuma ana amfani da su musamman a cikin shirye-shiryen kayan aikin semiconductor da na'urori.
Lokacin aikawa: Mayu-06-2024