Girman Epitaxial fasaha ce da ke tsiro da kristal Layer guda akan madaidaicin kristal guda ɗaya (substrate) tare da daidaitawar crystal iri ɗaya kamar maɗaurin, kamar dai ainihin crystal ya faɗa waje.Wannan sabon girma guda crystal Layer na iya bambanta da substrate cikin sharuddan conductivity nau'in, resistivity, da dai sauransu, kuma zai iya girma Multi-Layer guda lu'ulu'u tare da daban-daban kauri da daban-daban bukatun, don haka ƙwarai inganta sassauci na na'urar zane da kuma na'urar yi.Bugu da kari, ana kuma amfani da tsarin epitaxial sosai a cikin fasahar keɓewar haɗin gwiwa ta PN a cikin haɗaɗɗun da'irori da haɓaka ingancin kayan abu a cikin manyan da'irori masu haɗaka.
Rarraba epitaxy ya dogara ne akan nau'ikan sinadarai daban-daban na substrate da epitaxial Layer da hanyoyin haɓaka daban-daban.
Dangane da nau'ikan sinadarai daban-daban, haɓakar epitaxial na iya kasu kashi biyu:
1. Homoepitaxial: A wannan yanayin, Layer epitaxial yana da nau'in sinadarai iri ɗaya kamar na substrate.Misali, silikon epitaxial yadudduka ana girma kai tsaye akan abubuwan siliki.
2. Heteroepitaxy: A nan, sinadarai na Layer epitaxial ya bambanta da na substrate.Misali, gallium nitride epitaxial Layer ana girma akan sapphire substrate.
Dangane da hanyoyin haɓaka daban-daban, fasahar haɓaka epitaxial kuma ana iya raba ta zuwa nau'ikan iri daban-daban:
1. Molecular beam epitaxy (MBE): Wannan fasaha ce don haɓaka fina-finai na bakin ciki na kristal guda ɗaya akan nau'ikan kristal guda ɗaya, wanda aka samu ta hanyar sarrafa daidaitaccen ƙarfin ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar ƙwayar cuta.
2. Metal-Organic chemical tururi deposition (MOCVD): Wannan fasaha yana amfani da karfe-kwayoyin mahadi da gas-lokaci reagents don yin sinadaran halayen a high yanayin zafi don samar da da ake bukata bakin ciki film kayan.Yana da aikace-aikace masu fadi a cikin shirye-shiryen kayan aikin semiconductor na fili da na'urori.
3. Liquid Phase Epitaxy (LPE): Ta hanyar ƙara kayan ruwa zuwa nau'in kristal guda ɗaya da yin maganin zafi a wani zafin jiki, kayan ruwa yana yin crystallizes don samar da fim din crystal guda ɗaya.Fina-finan da wannan fasaha ta shirya sun haɗa da lattice-madaidaicin ma'auni kuma ana amfani da su sau da yawa don shirya kayan aikin semiconductor da na'urori.
4. Tururi lokaci epitaxy (VPE): Yana amfani da gaseous reactants don yin sinadaran halayen a high yanayin zafi don samar da da ake bukata bakin ciki film kayan.Wannan fasaha ya dace da shirya babban yanki, manyan fina-finai na kristal guda ɗaya masu inganci, kuma yana da fice musamman a cikin shirye-shiryen kayan aikin semiconductor da na'urori.
5. Chemical beam epitaxy (CBE): Wannan fasaha tana amfani da katakon sinadarai don haɓaka fina-finai na crystal guda ɗaya akan nau'in kristal guda ɗaya, wanda aka samu ta hanyar sarrafa daidaitaccen adadin katako na sinadari da yawa.Yana da fadi da aikace-aikace a cikin shirye-shiryen na high quality-daya crystal bakin ciki fina-finai.
6. Atomic Layer epitaxy (ALE): Amfani da atomic Layer deposition fasaha, da ake bukata na bakin ciki film kayan da ake bukata Layer by Layer a kan guda crystal substrate.Wannan fasaha na iya shirya babban yanki, manyan fina-finai na kristal guda ɗaya masu inganci kuma galibi ana amfani da su don shirya kayan haɗin gwiwar semiconductor da na'urori.
7. Hot bango epitaxy (HWE): Ta hanyar high-zazzabi dumama, gaseous reactants ana ajiye a kan guda crystal substrate ta samar da guda crystal fim.Wannan fasaha kuma ta dace da shirya manyan yanki, manyan fina-finai na kristal guda ɗaya masu inganci, kuma ana amfani da su musamman a cikin shirye-shiryen kayan aikin semiconductor da na'urori.
Lokacin aikawa: Mayu-06-2024