Menene epitaxy?

Yawancin injiniyoyi ba su saba da su baepitaxy, wanda ke taka muhimmiyar rawa a masana'antar na'urar semiconductor.Epitaxyana iya amfani dashi a cikin samfuran guntu daban-daban, kuma samfuran daban-daban suna da nau'ikan epitaxy daban-daban, gami daDa epitaxy, SiC epitaxy, GaN epitaxy, da dai sauransu.

Menene epitaxy?
Epitaxy galibi ana kiransa “Epitaxy” a Turanci. Kalmar ta fito daga kalmomin Helenanci “epi” (ma’ana “sama”) da “taxi” (ma’ana “tsari”). Kamar yadda sunan ke nunawa, yana nufin tsara tsari da kyau a saman abu. Tsarin epitaxy shine saka sirara siraɗin lu'ulu'u guda ɗaya akan ƙaramin kristal guda ɗaya. Wannan sabon Layer crystal guda daya da aka ajiye ana kiransa Layer epitaxial.

Akwai manyan nau'ikan epitaxy guda biyu: homoepitaxial da heteroepitaxial. Homoepitaxial yana nufin girma abu ɗaya akan nau'in substrate iri ɗaya. Layer epitaxial da substrate suna da daidai tsarin lattice iri ɗaya. Heteroepitaxy shine haɓakar wani abu akan ƙaramin abu ɗaya. A wannan yanayin, tsarin lattice na epitaxially girma crystal Layer da substrate na iya zama daban-daban. Menene lu'ulu'u ɗaya da polycrystalline?
A cikin semiconductors, sau da yawa muna jin sharuɗɗan silicon crystal silicon da polycrystalline silicon. Me ya sa ake kiran wasu silikon da ake kira lu'ulu'u ɗaya, wasu silikon da ake kira polycrystalline?

Lu'ulu'u ɗaya: Tsarin lattice yana ci gaba kuma baya canzawa, ba tare da iyakoki na hatsi ba, wato, gabaɗayan kristal ya ƙunshi lattice guda ɗaya tare da daidaitaccen daidaitawar crystal. Polycrystalline: Polycrystalline yana kunshe ne da ƙananan hatsi masu yawa, kowannensu crystal ne guda ɗaya, kuma yanayin su yana da bazuwar game da juna. Waɗannan hatsi an raba su da iyakokin hatsi. Farashin samar da kayan polycrystalline ya fi ƙasa da na lu'ulu'u ɗaya, don haka har yanzu suna da amfani a wasu aikace-aikacen. A ina za a shiga tsarin epitaxial?
A cikin kera na'urori masu haɗaka na tushen silicon, ana amfani da tsarin epitaxial sosai. Misali, ana amfani da siliki epitaxy don girma tsaftataccen siliki mai tsaftataccen tsari a kan abin da ake amfani da shi na siliki, wanda ke da matukar mahimmanci ga kera na'urorin da'irori na gaba. Bugu da kari, a cikin na'urorin wutar lantarki, SiC da GaN abubuwa ne da aka saba amfani da su masu faffadan babban bandgap semiconductor tare da ingantacciyar damar sarrafa wutar lantarki. Wadannan kayan yawanci ana shuka su akan siliki ko wasu abubuwan da ake amfani da su ta hanyar epitaxy. A cikin sadarwa ta ƙididdigewa, ƙananan raƙuman ƙididdigewa na tushen semiconductor yawanci suna amfani da sifofin siliki germanium epitaxial. Da dai sauransu.

Hanyoyin haɓakar epitaxial?

Hanyoyin epitaxy semiconductor guda uku da aka saba amfani da su:

Molecular beam epitaxy (MBE): Molecular beam epitaxy) fasaha ce ta haɓakar haɓakar ɗabi'a da aka yi a ƙarƙashin matsanancin matsanancin yanayi. A cikin wannan fasaha, tushen kayan yana fitar da su a cikin nau'i na atoms ko katako na kwayoyin halitta sannan a ajiye su a kan ma'auni na crystalline. MBE ingantaccen fasaha ne na haɓakar fim na semiconductor mai iya sarrafawa wanda zai iya sarrafa kauri na kayan da aka ajiye daidai a matakin atomic.

Metal Organic CVD (MOCVD): A cikin tsarin MOCVD, ana ba da ƙarfe na ƙarfe da iskar hydride da ke ɗauke da abubuwan da ake buƙata zuwa ga ma'aunin a yanayin zafin da ya dace, kuma ana samar da abubuwan da ake buƙata na semiconductor ta hanyar halayen sinadarai kuma an ajiye su a kan substrate, yayin da sauran abubuwan da ake buƙata. mahadi da dauki kayayyakin da ake fitarwa.

Fushi Phase Epitaxy (VPE): Vapor Phase Epitaxy fasaha ce mai mahimmanci da aka saba amfani da ita wajen samar da na'urorin semiconductor. Asalin ka'idarsa ita ce safarar tururin abu ɗaya ko fili a cikin iskar mai ɗaukar kaya da saka lu'ulu'u a kan wani abu ta hanyar halayen sinadarai.