A cikin tsarin shirye-shiryen wafer, akwai mahimman hanyoyin haɗin gwiwa guda biyu: ɗaya shine shirye-shiryen substrate, ɗayan kuma shine aiwatar da tsarin epitaxial. Substrate, wafer da aka ƙera a hankali daga semiconductor guda kristal, ana iya saka shi kai tsaye cikin tsarin masana'antar wafer a matsayin tushen samar da na'urorin semiconductor, ko kuma ana iya haɓaka ta ta hanyoyin epitaxial.
To, menene ma'anar magana? A taƙaice, epitaxy shine haɓakar sabon Layer na kristal guda ɗaya akan ƙaramin kristal guda ɗaya wanda aka sarrafa shi da kyau (yanke, niƙa, gogewa, da sauransu). Wannan sabon nau'in lu'u-lu'u guda ɗaya da ma'auni za a iya yin shi da abu ɗaya ko kayan daban-daban, ta yadda za'a iya samun ci gaba mai kama da heteroepitaxial kamar yadda ake bukata. Saboda sabon Layer crystal guda daya girma zai fadada bisa ga lokacin crystal na substrate, ana kiran shi Layer epitaxial. Kaurinsa gabaɗaya 'yan microns ne kawai. Ɗaukar siliki a matsayin misali, haɓakar siliki na epitaxial shine haɓaka Layer na silicon tare da daidaitawar kristal iri ɗaya kamar substrate, tsayayyar juriya da kauri, akan ƙaramin siliki guda kristal tare da takamaiman yanayin kristal. Silica guda crystal Layer tare da ingantaccen tsarin lattice. Lokacin da aka girma Layer epitaxial a kan substrate, gaba ɗaya ana kiransa wafer epitaxial.
Don masana'antar semiconductor silicon na gargajiya, kera manyan na'urori da na'urori masu ƙarfi kai tsaye akan wafern silicon za su gamu da wasu matsalolin fasaha. Misali, buƙatun babban ƙarfin wutan lantarki, ƙaramin juriya na juriya da ƙaramin ƙarancin ƙarfin lantarki a cikin yankin mai tarawa yana da wahalar cimmawa. Gabatar da fasahar epitaxy da wayo yana magance waɗannan matsalolin. Maganin shine a girma babban juriya na epitaxial a kan ƙaramin siliki mai ƙarancin juriya, sa'an nan kuma ƙirƙira na'urori akan babban Layer epitaxial. Ta wannan hanya, da high-resistivity epitaxial Layer samar da wani babban rushewa irin ƙarfin lantarki ga na'urar, yayin da low-resistivity substrate rage juriya na substrate, game da shi rage jikewa ƙarfin lantarki drop, game da shi cimma high rushewa irin ƙarfin lantarki da kuma kananan Balance tsakanin juriya da kuma. ƙaramin ƙarfin wutar lantarki.
Bugu da kari, fasahohin epitaxy irin su tururi lokaci epitaxy da ruwa lokaci epitaxy na GaAs da sauran III-V, II-VI da sauran kwayoyin fili semiconductor kayan suma an inganta sosai kuma sun zama tushen ga mafi yawan na'urorin microwave, optoelectronic na'urorin da iko. na'urori. Ba makawa tsari fasahar don samarwa, musamman nasarar aikace-aikace na kwayoyin katako da karfe-kwayoyin tururi lokaci epitaxy fasahar a cikin bakin ciki yadudduka, superlatices, adadi rijiyoyin, strained superlatices, da atomic-matakin bakin ciki-Layer epitaxy sun zama wani sabon filin na semiconductor bincike. Ci gaban "Energy Belt Project" ya kafa tushe mai tushe.
Dangane da na'urorin semiconductor na ƙarni na uku, kusan duk irin waɗannan na'urori na semiconductor ana yin su akan Layer epitaxial, kuma wafer siliki carbide da kanta kawai ke aiki a matsayin substrate. Kauri na SiC epitaxial abu, mayar da hankali mai ɗaukar hoto da sauran sigogi kai tsaye suna ƙayyade kaddarorin lantarki daban-daban na na'urorin SiC. Silicon carbide na'urorin don aikace-aikacen wutar lantarki mai ƙarfi sun gabatar da sabbin buƙatu don sigogi kamar kauri na kayan epitaxial da maida hankali mai ɗaukar hoto na baya. Don haka, fasahar epitaxial na silicon carbide tana taka muhimmiyar rawa a cikin cikakken amfani da aikin na'urorin silicon carbide. Shirye-shiryen kusan dukkanin na'urorin wutar lantarki na SiC sun dogara ne akan wafers na SiC epitaxial masu inganci. Samar da yadudduka na epitaxial wani muhimmin sashi ne na masana'antar bandgap mai fa'ida.
Lokacin aikawa: Mayu-06-2024