Asalin Sunan "Epitaxial Wafer"
Shirye-shiryen Wafer ya ƙunshi manyan matakai guda biyu: shirye-shiryen substrate da tsarin epitaxial. An yi substrate ɗin da kayan kristal guda ɗaya kuma ana sarrafa shi don samar da na'urorin semiconductor. Hakanan za'a iya aiwatar da aikin epitaxial don samar da wafer epitaxial. Epitaxy yana nufin tsarin girma sabon Layer crystal a kan wani abu mai kristal da aka sarrafa a hankali. Sabuwar lu'ulu'u ɗaya na iya zama kayan abu ɗaya kamar na substrate (epitaxy kama) ko wani abu daban (heterogeneous epitaxy). Tunda sabon Layer crystal yayi girma cikin jeri tare da juzu'in crystal na substrate, ana kiran shi Layer epitaxial. Ana kiran wafer tare da Layer epitaxial a matsayin wafer epitaxial (epitaxial wafer = epitaxial Layer + substrate). Ana kiran na'urorin da aka ƙirƙira a kan Layer epitaxial "Epitaxy na gaba," yayin da na'urorin da aka ƙirƙira a kan abin da ake kira "reverse epitaxy," inda epitaxial Layer ke aiki kawai a matsayin tallafi.
Epitaxy mai kama da juna
▪Epitaxy mai kama da juna:Layer epitaxial da substrate an yi su da abu iri ɗaya: misali, Si/Si, GaAs/GaAs, GaP/GaP.
▪Epitaxy iri-iri:Layer epitaxial da substrate an yi su ne da abubuwa daban-daban: misali, Si/Al₂O₃, GaS/Si, GaAlAs/GaAs, GaN/SiC, da sauransu.
Wafers da aka goge
Wadanne Matsaloli Ne Epitaxy Yake Magance?
Babban kayan kristal guda ɗaya kaɗai ba su isa ba don biyan buƙatun ƙirƙira na na'urar semiconductor. Saboda haka, a ƙarshen 1959, an haɓaka dabarar haɓakar kayan ƙwaƙƙwaran sirara ɗaya ɗaya da aka sani da epitaxy. Amma ta yaya fasahar epitaxial ta taimaka musamman ci gaban kayan? Don siliki, haɓakar siliki epitaxy ya faru a wani lokaci mai mahimmanci lokacin da ƙirƙira manyan mitoci, transistor silicon masu ƙarfi ya fuskanci matsaloli masu mahimmanci. Daga mahangar ka'idodin transistor, samun mitar mita da ƙarfi yana buƙatar ƙarfin rugujewar yankin mai tattarawa ya kasance mai girma, kuma juriyar juriya ta zama ƙasa, ma'ana ƙarfin lantarki ya kamata ya zama ƙarami. Tsohon yana buƙatar babban juriya a cikin kayan tattarawa, yayin da na ƙarshe yana buƙatar ƙananan juriya, wanda ke haifar da sabani. Rage kauri na yankin mai tarawa don rage juriya na jeri zai sa wafer siliki yayi bakin ciki da rauni don sarrafawa, kuma rage juriya zai ci karo da buƙatun farko. Ci gaban fasahar epitaxial ya sami nasarar warware wannan batu. Maganin shine don girma babban juzu'i na epitaxial Layer akan ƙaramin juriya. An ƙirƙira na'urar akan Layer epitaxial, yana tabbatar da babban ƙarfin rushewar wutar lantarki na transistor, yayin da ƙaramin juriya yana rage juriya na tushe kuma yana rage ƙarfin ƙarfin jikewa, yana warware sabani tsakanin buƙatun biyu.
Bugu da ƙari, fasahohin epitaxial na III-V da II-VI mahaɗan semiconductor kamar GaAs, GaN, da sauransu, gami da lokacin tururi da epitaxy na ruwa, sun ga gagarumin ci gaba. Waɗannan fasahohin sun zama mahimmanci don ƙirƙira na'urorin microwave da yawa, optoelectronic, da na'urorin wuta. Musamman ma, dabaru kamar molecular beam epitaxy (MBE) da karfe-kwayoyin tururin sinadarai (MOCVD) an yi nasarar amfani da su zuwa siraran sirara, superlatices, rijiyoyin adadi, matsananciyar superlattices, da sikelin sikelin na atomic-sikelin bakin ciki na epitaxial, shimfiɗa tushe mai ƙarfi ga haɓaka sabbin fannonin semiconductor kamar "injin bandeji."
A aikace-aikace masu amfani, yawancin na'urorin semiconductor masu fadi-fadi an ƙirƙira su akan yadudduka na epitaxial, tare da kayan kamar silicon carbide (SiC) ana amfani da su kawai azaman kayan maye. Sabili da haka, sarrafa Layer epitaxial shine mahimmancin mahimmanci a cikin masana'antar semiconductor mai fadi-bandgap.
Fasahar Epitoxy: Maɓalli Bakwai
1. Epitoxy iya girma a high (ko low) resistivity Layer a kan wani low (ko high) resistivity substrate.
2. Epitaxy yana ba da damar yadudduka na N (ko p) nau'in subsial a kan PN kai tsaye, kai tsaye samar da yaduwa don ƙirƙirar jerin gwanon pn a kan crarstal substrate.
3. Lokacin da aka haɗa shi da fasahar maskurin, za'a iya yin haɓakar ci gaban epitaxial a cikin takamaiman wurare, yana ba da damar ƙirƙirar da'irori da na'urori tare da sifofi na musamman.
4. Ci gaban Epitaxial yana ba da damar sarrafa nau'ikan doping da yawa, tare da ikon cimma canje-canje kwatsam ko a hankali a hankali.
5. Epitaxy na iya girma iri-iri, mai nau'i-nau'i, nau'i-nau'i masu yawa tare da nau'i-nau'i masu mahimmanci, ciki har da yadudduka na bakin ciki.
6. Ci gaban Epitaxial na iya faruwa a yanayin zafi a ƙasa da wurin narkewa na abu, tare da ƙimar girma mai sarrafawa, yana ba da damar daidaitattun matakan atomic a cikin kauri na Layer.
7. Epitaxy yana ba da damar haɓaka nau'ikan kristal guda ɗaya na kayan da ba za a iya ja su cikin lu'ulu'u ba, kamar GaN da ternary/quaternary compound semiconductor.
Daban-daban na Epitaxial Layers da Tsarin Epitaxial
A taƙaice, yadudduka na epitaxial suna ba da mafi sauƙin sarrafawa da cikakkiyar tsari na crystal fiye da ƙananan sassa, wanda ke da amfani don haɓaka kayan haɓaka.
Lokacin aikawa: Dec-24-2024