Labaran Masana'antu

  • Jiya, Hukumar Ƙirƙirar Kimiyya da Fasaha ta ba da sanarwar cewa Huazhuo Precision Technology ya ƙare IPO!

    Kawai an sanar da isar da kayan aikin cire Laser na SIC mai inci 8 na farko a China, wanda kuma shine fasahar Tsinghua; Me yasa suka janye kayan da kansu? Kalmomi kaɗan kawai: Na farko, samfuran sun bambanta sosai! Da farko dai ban san me suke yi ba. A halin yanzu, H...
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  • CVD silicon carbide shafi-2

    CVD silicon carbide shafi-2

    CVD silicon carbide shafi 1. Me yasa akwai murfin silicon carbide Layer na epitaxial shine ƙayyadadden fim ɗin kristal guda ɗaya wanda aka girma akan wafer ta hanyar tsarin epitaxial. Ana kiran wafer substrate da fim ɗin bakin ciki na epitaxial tare da haɗin gwiwa. Daga cikinsu akwai...
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  • Shiri tsari na SIC shafi

    Shiri tsari na SIC shafi

    A halin yanzu, hanyoyin shirye-shirye na suturar SiC galibi sun haɗa da hanyar gel-sol, hanyar sakawa, hanyar shafa buroshi, hanyar fesa plasma, hanyar amsawar tururin sinadarai (CVR) da hanyar sanya tururi (CVD). Hanyar haɗawa Wannan hanyar wani nau'i ne na yanayin zafi mai ƙarfi ...
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  • CVD Silicon Carbide Coating-1

    CVD Silicon Carbide Coating-1

    Menene CVD SiC Chemical vapor deposition (CVD) tsari ne na tsugunar da ruwa wanda ake amfani dashi don samar da ingantaccen kayan aiki mai tsafta. Ana amfani da wannan tsari sau da yawa a filin masana'anta na semiconductor don samar da fina-finai na bakin ciki a saman wafers. A cikin aiwatar da shirye-shiryen SiC ta CVD, substrate ɗin ya ƙare ...
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  • Binciken tsarin karkacewa a cikin SiC crystal ta hanyar simintin gano ray da aka taimaka ta hanyar hoton topological X-ray.

    Binciken tsarin karkacewa a cikin SiC crystal ta hanyar simintin gano ray da aka taimaka ta hanyar hoton topological X-ray.

    Bayanan Bincike Muhimmancin silicon carbide (SiC): A matsayin babban nau'in siliki na siliki, siliki carbide ya ja hankalin mutane da yawa saboda kyawawan kaddarorinsa na lantarki (kamar bandgap mafi girma, saurin saturation na lantarki da haɓakar thermal). Wadannan prop...
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  • Tsarin shirye-shiryen kristal iri a cikin SiC guda kristal girma 3

    Tsarin shirye-shiryen kristal iri a cikin SiC guda kristal girma 3

    Tabbatar da Ci gabaAn shirya lu'ulu'u na iri na silicon carbide (SiC) biyo bayan ƙayyadaddun tsari kuma an inganta su ta hanyar ci gaban SiC crystal. Dandalin ci gaban da aka yi amfani da shi shine tanderun haɓaka haɓakar SiC wanda ya haɓaka kansa tare da zafin girma na 2200 ℃, matsin girma na 200 Pa, da girma ...
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  • Tsari Tsare-tsaren Shirye-shiryen Crystal a cikin SiC Single Crystal Growth (Sashe na 2)

    Tsari Tsare-tsaren Shirye-shiryen Crystal a cikin SiC Single Crystal Growth (Sashe na 2)

    2. Tsarin Gwaji 2.1 Curing of Adhesive FilmAn lura cewa kai tsaye ƙirƙirar fim ɗin carbon ko haɗin kai tare da takarda graphite a kan wafers na SiC wanda aka rufe tare da mannewa ya haifar da batutuwa da yawa: 1. A ƙarƙashin yanayi mara kyau, fim ɗin m akan SiC wafers ya haɓaka bayyanar sikelin. sa hannu...
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  • Tsari Tsare-tsaren Shirye-shiryen Crystal a cikin SiC Single Crystal Growth

    Tsari Tsare-tsaren Shirye-shiryen Crystal a cikin SiC Single Crystal Growth

    Silicon carbide (SiC) kayan yana da fa'idodin fa'ida mai fa'ida, babban ƙarfin zafin jiki, babban ƙarfin fashewar filin, da cikakken saurin motsi na lantarki, yana mai da shi kyakkyawan alƙawarin a cikin masana'antar masana'antar semiconductor. SiC guda lu'ulu'u ana samarwa gabaɗaya ta cikin...
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  • Menene hanyoyin goge gogen wafer?

    Menene hanyoyin goge gogen wafer?

    Daga cikin dukkan hanyoyin da ke tattare da ƙirƙirar guntu, ƙarshen wafer ɗin shine a yanke shi cikin mutuƙar mutum ɗaya kuma a haɗa shi cikin ƙananan kwalaye da aka rufe tare da ƴan filaye kaɗan kawai fallasa. Za a yi la'akari da guntu bisa ga kofa, juriya, halin yanzu, da ƙimar ƙarfin lantarki, amma ba wanda zai yi la'akari da ...
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  • Tushen Gabatarwar Tsarin Ci gaban SiC Epitaxial

    Tushen Gabatarwar Tsarin Ci gaban SiC Epitaxial

    Epitaxial Layer shine takamaiman fim ɗin kristal guda ɗaya wanda aka girma akan wafer ta hanyar tsarin epitaxial, kuma wafer ɗin substrate da fim ɗin epitaxial ana kiransa wafer epitaxial. Ta hanyar haɓaka Layer na Silicon carbide epitaxial akan madaidaicin siliki carbide substrate, siliki carbide kamanni epitaxial…
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  • Mabuɗin mahimman bayanai na sarrafa ingancin sarrafa marufi na semiconductor

    Mabuɗin mahimman bayanai na sarrafa ingancin sarrafa marufi na semiconductor

    Mabuɗin Mabuɗin don Ingancin Inganci a cikin Tsarin Marufi na Semiconductor A halin yanzu, fasahar aiwatar da marufi na semiconductor ya inganta sosai kuma an inganta shi. Koyaya, daga hangen nesa gabaɗaya, matakai da hanyoyin shirya marufi na semiconductor ba su kai ga mafi inganci ba.
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  • Kalubale a cikin Tsarin Marufi na Semiconductor

    Kalubale a cikin Tsarin Marufi na Semiconductor

    Dabarun na yanzu don marufi na semiconductor suna haɓaka sannu a hankali, amma gwargwadon abin da aka karɓi kayan aiki da fasaha na atomatik a cikin marufi na semiconductor kai tsaye yana ƙayyade ainihin sakamakon da ake tsammani. Ayyukan marufi na semiconductor har yanzu suna fama da…
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